METHOD FOR PREPARING SILICON COMPOSITE

    公开(公告)号:US20220259050A1

    公开(公告)日:2022-08-18

    申请号:US17433547

    申请日:2020-10-22

    IPC分类号: C01B33/02 C01B32/05 C01B32/21

    摘要: Provided is a method of preparing a silicon composite. The method of preparing a silicon composite includes forming a silicon solution by wet-grinding a silicon raw material; forming silicon fine powder by spray-drying the silicon solution; disintegrating the silicon fine powder; forming a dispersion by coating the silicon fine powder with a first pitch; forming a first composite by coating the dispersion with a second pitch; forming a second composite by carbonizing the first composite; and classifying the second composite according to a preset particle size reference.

    METHODS OF PRODUCING FUNCTIONALIZED POWDER PARTICLES

    公开(公告)号:US20220169863A1

    公开(公告)日:2022-06-02

    申请号:US17194148

    申请日:2021-03-05

    发明人: Jesse KREMENAK

    摘要: The present disclosure provides functionalized powder particles and methods of forming functionalized powder particles. The functionalization is acquired through the formation of primary and/or secondary structures on a powder particle. Functionalization can be controlled to bring about changes in a broad range of physical and/or chemical properties.

    Radiation window
    6.
    发明申请

    公开(公告)号:US20220155473A1

    公开(公告)日:2022-05-19

    申请号:US17598364

    申请日:2020-03-17

    摘要: According to an example aspect of the present invention, there is provided a radiation window manufacturing method, comprising patterning a mask on a top surface of a bulk wafer or compound wafer, etching the bulk or compound wafer from the top surface, based on the mask, either by timed etching of the bulk wafer, or until an inner insulator layer of the compound wafer, thereby generating recesses in the bulk or compound wafer, filling the recesses, at least partly, with a filling material, polishing the top surface of the bulk or compound wafer, and providing a membrane layer on the polished top surface, and etching the bulk or compound wafer from a bottom surface, opposite the top surface, to build a supporting structure for the membrane layer in accordance with a shape defined by the mask.

    Amorphization of Silicon
    10.
    发明申请

    公开(公告)号:US20210347643A1

    公开(公告)日:2021-11-11

    申请号:US16943368

    申请日:2020-07-30

    申请人: Nanostar Inc.

    摘要: The formation of amorphous silicon for use in, for example, lithium-ion batteries is disclosed. The process can include milling a plurality of silicon nanocrystals having an average particle diameter and a percent crystallinity greater than about 60%, in a unit designed to reduce the average particle diameter to the same or a larger size, thereby forming a plurality of amorphous silicon nanoparticles having about the same average particle diameter as the silicon nanocrystals and a percent crystallinity of less than about 50%.