公开(公告)号：WO2020081948A1

公开(公告)日：2020-04-23

申请号：PCT/US2019/056961

申请日：2019-10-18

Applicant: APPLIED MATERIALS, INC.

Inventor： PANDA, Priyadarshi ,  LEI, Jianxin ,  HOU, Wenting ,  BALSEANU, Mihaela ,  LI, Ning ,  NATARAJAN, Sanjay ,  LEE, Gill Yong ,  HWANG, In Seok ,  SASAKI, Nobuyuki ,  KANG, Sung-Kwan

IPC: H01L27/108

Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise a substrate with at least one film stack. The film stack comprises a polysilicon layer on the substrate; a bit line metal layer on the polysilicon layer; a cap layer on the bit line metal layer; and a hardmask on the cap layer. The memory device of some embodiments includes an optional barrier metal layer on the polysilicon layer and the bit line metal layer is on the barrier metal layer. Methods of forming electronic devices are described where one or more patterns are transferred through the films of the film stack to provide the bit line of a memory device.

公开(公告)号：WO2021101700A1

公开(公告)日：2021-05-27

申请号：PCT/US2020/058672

申请日：2020-11-03

Applicant: APPLIED MATERIALS, INC.

Inventor： PANDA, Priyadarshi ,  LEI, Jianxin ,  NATARAJAN, Sanjay ,  HWANG, In Seok ,  SASAKI, Nobuyuki

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/02

Abstract: A process of smoothing a top surface of a bit line metal of a memory structure decreases resistance of a bit line stack. The process includes depositing a titanium layer of approximately 30 angstroms to 50 angstroms on a polysilicon layer on a substrate, depositing a first titanium nitride layer of approximately 15 angstroms to approximately 40 angstroms on the titanium layer, annealing the substrate at a temperature of approximately 700 degrees Celsius to approximately 850 degrees Celsius, depositing a second titanium nitride layer of approximately 15 angstroms to approximately 40 angstroms on the first titanium nitride layer after annealing, and depositing a bit line metal layer of ruthenium on the second titanium nitride layer.

公开(公告)号：WO2021183767A1

公开(公告)日：2021-09-16

申请号：PCT/US2021/021914

申请日：2021-03-11

Applicant: APPLIED MATERIALS, INC.

Inventor： LI, Luping ,  WRENCH, Jacqueline S. ,  CHEN, Wen Ting ,  YANG, Yixiong ,  HWANG, In Seok ,  CHEN, Shih Chung ,  GANDIKOTA, Srinivas

IPC: C23C16/06 ,  C23C16/14 ,  C23C16/18 ,  C23C16/32 ,  C23C16/455 ,  C23C16/02 ,  C23C16/04 ,  G02B5/08 ,  G02B1/02

Abstract: Methods and apparatus for forming reflector films are described A liner is formed on a substrate surface followed by formation of the reflector layer so that there is no oxygen exposure between liner and reflector layer formation. In some embodiments, a high aspect ratio structure is filled with a reflector material by partially filling the structure with the reflector material while growth is inhibited at a top portion of the structure, reactivating the top portion of the substrate and then filling the structure with the reflector material.