公开(公告)号：WO2021247979A1

公开(公告)日：2021-12-09

申请号：PCT/US2021/035865

申请日：2021-06-04

Applicant: APPLIED MATERIALS, INC.

Inventor： FISHER, Ilanit ,  LIN, Chi-Chou ,  WU, Kedi ,  CHEN, Wen Ting ,  CHEN, Shih Chung ,  GANDIKOTA, Srinivas ,  SRIRAM, Mandyam ,  SHEN, Chenfei ,  YOSHIDA, Naomi ,  REN, He

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/04 ,  C23C16/14 ,  C23C16/455 ,  C23C16/0227 ,  C23C16/45553 ,  H01L21/02068 ,  H01L21/28568

Abstract: Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.

公开(公告)号：WO2021183767A1

公开(公告)日：2021-09-16

申请号：PCT/US2021/021914

申请日：2021-03-11

Applicant: APPLIED MATERIALS, INC.

Inventor： LI, Luping ,  WRENCH, Jacqueline S. ,  CHEN, Wen Ting ,  YANG, Yixiong ,  HWANG, In Seok ,  CHEN, Shih Chung ,  GANDIKOTA, Srinivas

IPC: C23C16/06 ,  C23C16/14 ,  C23C16/18 ,  C23C16/32 ,  C23C16/455 ,  C23C16/02 ,  C23C16/04 ,  G02B5/08 ,  G02B1/02

Abstract: Methods and apparatus for forming reflector films are described A liner is formed on a substrate surface followed by formation of the reflector layer so that there is no oxygen exposure between liner and reflector layer formation. In some embodiments, a high aspect ratio structure is filled with a reflector material by partially filling the structure with the reflector material while growth is inhibited at a top portion of the structure, reactivating the top portion of the substrate and then filling the structure with the reflector material.

公开(公告)号：WO2021183270A1

公开(公告)日：2021-09-16

申请号：PCT/US2021/018651

申请日：2021-02-19

Applicant: APPLIED MATERIALS, INC.

Inventor： YANG, Yixiong ,  LIU, Wei ,  LO, Yuan-hui ,  GANDIKOTA, Srinivas ,  WRENCH, Jacqueline Samantha ,  LIN, Yongjing ,  CHEN, Wen Ting ,  CHEN, Shihchung

IPC: H01L21/768 ,  H01L21/3205 ,  H01L21/321

Abstract: The present disclosure provides methods for treating film layers in a substrate including positioning the substrate in a processing volume of a processing chamber. The substrate can have high aspect ratio features extending a depth from a substrate surface to a bottom surface. The feature can have a width defined by a first sidewall and a second sidewall. A film with a composition that includes metal is formed on the substrate surface and the first sidewall, the second sidewall, and the bottom surface of each feature. The film in the feature can have a seam extending substantially parallel to the first and second sidewalls. The film is annealed and exposed to an oxygen radical while converting the metal of the film to a metal oxide. The metal oxide is exposed to a hydrogen radical while converting the metal oxide to a metal fill layer.