OPTOELECTRONIC MODULE
    101.
    发明申请
    OPTOELECTRONIC MODULE 审中-公开
    光电模块

    公开(公告)号:WO1998027449A1

    公开(公告)日:1998-06-25

    申请号:PCT/DE1997002672

    申请日:1997-11-14

    IPC分类号: G02B06/12

    摘要: In an optoelectronic module, the optoelectronic active components (12, 14) are produced as a sequence of epitaxially grown layers on the top surface of a substrate (1). The waveguide layers located in these components are connected to one another, and/or to outer connection surfaces, by passive waveguides (15) made of a material which differs from all the semiconductor materials of which the active components are made.

    摘要翻译: 一种光电模块,其中光电有源器件(12,14)作为(1)上产生的衬底的顶部上的外延生长层序列,并且其中存在于与彼此和/或与用于外部连接的外部连接焊盘这些设备波导层(通过无源波导 15连接),其由作为从有源器件的所有半导体元件不同的材料制成。

    IMPERMEABLE ENCAPSULATION OF OPTOELECTRONIC COMPONENTS
    103.
    发明申请
    IMPERMEABLE ENCAPSULATION OF OPTOELECTRONIC COMPONENTS 审中-公开
    光电组件的不可覆盖的封装

    公开(公告)号:WO1995025975A1

    公开(公告)日:1995-09-28

    申请号:PCT/SE1995000282

    申请日:1995-03-20

    IPC分类号: G02B06/42

    CPC分类号: G02B6/3873 G02B6/42

    摘要: An impermeable encapsulation of an optocomponent is fabricated by first arranging waveguides (9) and an optoelectronic component (11) on a base (3), preferably of silicon, and connecting them optically to each other. The optoelectronic component (11) is connected to electric driver circuits (15). Thereafter a silica layer (17) is deposited over a region of the substrate (3), after which it is encapsulated by applying a layer (19) of a curable plastics material. The deposition (19) of silica provides an impermeable inner encapsulation and prevents, when applying the curable plastics material, plastics from penetrating between the inner ends of the waveguides (9) and the optoelectronic component (11), and thus the optical contact is secured therebetween.

    摘要翻译: 通过首先在基底(3)上布置波导(9)和光电子部件(11),优选硅并且将它们彼此光学连接来制造光学部件的不可渗透的封装。 光电子部件(11)连接到电驱动电路(15)。 此后,在衬底(3)的区域上沉积二氧化硅层(17),之后通过施加可固化塑料材料的层(19)将其包封。 二氧化硅的沉积(19)提供了不可渗透的内部封装,并且当施加可塑性塑料材料时,防止在波导(9)的内端和光电子部件(11)之间穿透的塑料,从而防止光学接触件 其间。

    OPTICAL WAVEGUIDE STRUCTURES AND FORMATION METHODS
    107.
    发明申请
    OPTICAL WAVEGUIDE STRUCTURES AND FORMATION METHODS 审中-公开
    光波形结构和形成方法

    公开(公告)号:WO1992018888A1

    公开(公告)日:1992-10-29

    申请号:PCT/US1992002583

    申请日:1992-03-31

    IPC分类号: G02B06/16

    摘要: A method is provided for forming an optical waveguide structure (10) upon a substrate (12) in accordance with the steps of: (a) forming a layer of base coat material upon the substrate (12), (b) forming a layer of cladding material (20) having a predetermined refractive index upon the base coat layer, (c) applying a channel waveguide pattern defining structure (10) to the layer of cladding material (20), (d) applying a patterning agent to transfer the pattern of the channel waveguide pattern defining structure (10) to a predetermined depth or depths into the cladding material layer (20) to define a waveguide trench pattern, (e) removing any remaining residue of channel waveguide pattern defining structure(10), (f) forming a thick coat layer (16) of waveguide material having a higher refractive index than the cladding material (20) onto the cladding material (20) and into the waveguide trench pattern, (g) planarizing the waveguide material (20) substantially to the plane of a topmost surface of the cladding material (20) in order to reduce the thickness of the thick coat layer (16), and (h) forming a layer of additional cladding material (26) to encapsulate the waveguide material in the waveguide trench pattern. An out-of-plane mirror (28) can be used to couple two different layers together optically. A lens element can be used for collimating light reflected by the out-of-plane mirror (28).

    SEMICONDUCTOR COMPONENT WITH A SILICON LAYER
    108.
    发明申请
    SEMICONDUCTOR COMPONENT WITH A SILICON LAYER 审中-公开
    具有硅层的半导体元件

    公开(公告)号:WO1991015798A1

    公开(公告)日:1991-10-17

    申请号:PCT/DE1991000303

    申请日:1991-04-08

    IPC分类号: G02F01/025

    摘要: In a semiconductor component with a silicon layer (1), a silicon-containing waveguide (2) and a diode structure connected to external conductive contacts (6, 7), the diode structure is in such an arrangement with the waveguide (2) that it can be affected by electron-hole pairs generated in the waveguide (2) by photons. To construct a semiconductor component with an optical waveguide (2) and an integrated diode structure in which high losses on the optical waveguide (2) are avoided, the waveguide (2) is slightly doped and a germanium layer is a part of the diode structure. The semiconductor component is suitable as an integrated optical component for optical-electric transformation.

    摘要翻译: 在具有硅层(1),含硅波导(2)和连接到外部导电触点(6,7)的二极管结构的半导体部件中,二极管结构与波导(2)的布置在 它可以受到光子在波导(2)中产生的电子 - 空穴对的影响。 为了构建具有光波导(2)的半导体部件和其中避免了光波导(2)的高损耗的集成二极管结构,波导(2)被轻微掺杂,锗层是二极管结构的一部分 。 该半导体元件适用于光电转换的集成光学元件。