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公开(公告)号:WO2021073979A1
公开(公告)日:2021-04-22
申请号:PCT/EP2020/078122
申请日:2020-10-07
Applicant: ASML NETHERLANDS B.V.
Inventor: JIN, Wenjie , LIN, Nan , PORTER, Christina, Lynn , SMORENBURG, Petrus, Wilhelmus
Abstract: Disclosed is an illumination source comprising a gas delivery system comprising a gas nozzle. The gas nozzle comprises an opening in an exit plane of the gas nozzle. The gas delivery system is configured to provide a gas flow from the opening for generating an emitted radiation at an interaction region. The illumination source is configured to receive a pump radiation having a propagation direction and to provide the pump radiation in the gas flow. A geometry shape of the gas nozzle is adapted to shape a profile of the gas flow such that gas density of the gas flow first increases to a maximum value and subsequently falls sharply in a cut-off region along the propagation direction.
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公开(公告)号:WO2021073817A1
公开(公告)日:2021-04-22
申请号:PCT/EP2020/075611
申请日:2020-09-14
Applicant: ASML NETHERLANDS B.V.
Inventor: VAN DE KERKHOF, Marcus, Adrianus , VAN DE WETERING, Ferdinandus, Martinus, Jozef, Henricus , YAKUNIN, Andrei, Mikhailovich
IPC: G03F7/20
Abstract: A reticle conditioning system comprises: a support structure for supporting a reticle; a gas supply module for providing a flow of gas adjacent to the reticle; and a biasing module for controlling an electrical potential of the reticle. The gas supply module is operable to provide a flow of gas adjacent to the support structure. The biasing module comprises a first electrode, a second electrode and a voltage supply. The first and second electrodes are each spaced apart from and facing the reticle so as to at least partially overlap with the reticle. The voltage supply is arranged to maintain the first electrode at a positive voltage, and the second electrode at a negative voltage, these voltages being such that the voltage of the reticle is negative. The second electrode is disposed such that it, in use, it does not overlap an image forming portion of the reticle.
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公开(公告)号:WO2021073813A1
公开(公告)日:2021-04-22
申请号:PCT/EP2020/075493
申请日:2020-09-11
Applicant: CARL ZEISS SMT GMBH , ASML NETHERLANDS B.V.
Inventor: VAN DE KERKHOF, Marcus
Abstract: An EUV collector mirror has a reflecting surface (16) to reflect usable EUV light which impinges on the reflection surface (16) from a source region (17) to a subsequent EUV optics. The reflection surface (16) carries a pump light grating structure (19) being designed to retroreflect pump light (22) which impinges upon the pump light grating structure (19) from the source region (17) back to the source region (17). The pump light (22) has a wavelength deviating from the wavelength of the usable EUV light. Such EUV collector mirror enables a high conversion efficiency between the energy of pump light of a laser discharged produced plasma (LDPP) EUV light source on the one hand and the resulting usable EUV energy on the other.
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公开(公告)号:WO2021052918A1
公开(公告)日:2021-03-25
申请号:PCT/EP2020/075675
申请日:2020-09-14
Applicant: ASML NETHERLANDS B.V.
Inventor: PISARENCO, Maxim , MIDDLEBROOKS, Scott, Anderson , MASLOW, Mark, John , VAN LARE, Marie-Claire , BATISTAKIS, Chrysostomos
Abstract: A system and method for generating predictive images for wafer inspection using machine learning are provided. Some embodiments of the system and method include acquiring the wafer after a photoresist applied to the wafer has been developed; imaging a portion of a segment of the developed wafer; acquiring the wafer after the wafer has been etched; imaging the segment of the etched wafer; training a machine learning model using the imaged portion of the developed wafer and the imaged segment of the etched wafer; and applying the trained machine learning model using the imaged segment of the etched wafer to generate predictive images of a developed wafer. Some embodiments include imaging a segment of the developed wafer; imaging a portion of the segment of the etched wafer; training a machine learning model; and applying the trained machine learning model to generate predictive after-etch images of the developed wafer.
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公开(公告)号:WO2021052772A1
公开(公告)日:2021-03-25
申请号:PCT/EP2020/074621
申请日:2020-09-03
Applicant: ASML HOLDING N.V. , ASML NETHERLANDS B.V. , STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN , STICHTING VU , UNIVERSITEIT VAN AMSTERDAM
Inventor: KOOLEN, Armand, Eugene, Albert , KREUZER, Justin , MEHTA, Nikhil , WARNAAR, Patrick , TENNER, Vasco, Tomas , TINNEMANS, Patricius, Aloysius Jacobus , CRAMER, Hugo
IPC: G03F7/20 , G01N21/956
Abstract: Disclosed is a method for a metrology measurement on an area of a substrate comprising at least a portion of a target structure. The method comprises receiving a radiation information representing a portion of radiation scattered by the are, and using a filter in a Fourier domain for removing or suppressing at least a portion of the received radiation information that does not relate to radiation that has been scattered by the target structure for obtaining a filtered radiation information for the metrology measurement, wherein characteristics of the filter are based on target information about the target structure.
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公开(公告)号:WO2021047841A1
公开(公告)日:2021-03-18
申请号:PCT/EP2020/072473
申请日:2020-08-11
Applicant: ASML NETHERLANDS B.V.
Inventor: CUI, Yingchao , YAGUBIZADE, Hadi , WEI, Xiuhong , SLOTBOOM, Daan, Maurits , PARK, Jeonghyun , ROY, Sarathi , ZHANG, Yichen , KAMALI, Mohammad, Reza , KIM, Sang-Uk
IPC: G03F7/20
Abstract: A method for determining lithographic matching performance includes obtaining first monitoring data E1M, E3M, E4M from recurrent monitoring for stability control for the available EUV scanners EUV1, EUV3 and EUV4. For a DUV scanner, second monitoring data D2M, is similarly obtained from recurrent monitoring (DMW, MT, OV, SM) for stability control. The EUV monitoring data E1M, E3M, E4M are in a first layout. The DUV monitoring data D2M are in a second layout. A cross-platform overlay matching performance between the first lithographic apparatus and the second lithographic apparatus is determined based on the first monitoring data and the second monitoring data. This is done by reconstructing 900, 1000 at least one of the first and second monitoring data into a common layout E1S, E3S, E4S, D2S to allow comparison 802 of the first and second monitoring data.
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公开(公告)号:WO2021047833A1
公开(公告)日:2021-03-18
申请号:PCT/EP2020/072107
申请日:2020-08-06
Applicant: ASML NETHERLANDS B.V.
Inventor: KLINKHAMER, Jacob Fredrik Friso , ALTINI, Valerio , KATTOUW, Hans, Erik , THIJSSEN, Theo, Wilhelmus, Maria
IPC: G03F7/20
Abstract: Disclosed is a method for determining a correction for control of a lithographic process for exposing a pattern on an exposure field using a lithographic apparatus. The method comprises obtaining a spatial profile describing spatial variation of a performance parameter across at least a portion of the exposure field and co-determining control profiles for the spatial profile to minimize error in the performance parameter while ensuring a minimum contrast quality. The co-determined control profiles comprise at least a stage control profile for control of a stage arrangement of the lithographic apparatus and a lens manipulator control profile for control of a lens manipulator of the lithographic apparatus operable to perform a correction for at least magnification in a direction perpendicular to the substrate plane.
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公开(公告)号:WO2021043519A1
公开(公告)日:2021-03-11
申请号:PCT/EP2020/071954
申请日:2020-08-05
Applicant: ASML NETHERLANDS B.V.
Inventor: WERKMAN, Roy , LAM, Pui, Leng , MINGHETTI, Blandine, Marie, Andree, Richit , BASTANI, Vahid , HAJIAHMADI, Mohammadreza , VERGAIJ-HUIZER, Lydia, Marianna , SPIERING, Frans, Reinier
IPC: G03F7/20
Abstract: A method and apparatus for determining a performance of a lithographic patterning process, the apparatus or method configured for or comprising: receiving an image of a portion of a substrate, the portion of the substrate comprising a first region comprising a first feature associated with a first lithographic exposure of the substrate at a first time, and a second region comprising a second feature associated with a second lithographic exposure of the substrate at a second time, wherein the first and second regions do not overlap and wherein the first feature and the second feature form a single feature extending along at least part of the first region and at least part of the second region; and determining the performance of the lithographic patterning process based on a feature characteristic of the first and/or second exposed feature associated with a boundary between the first region and the second region.
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公开(公告)号:WO2021037696A1
公开(公告)日:2021-03-04
申请号:PCT/EP2020/073446
申请日:2020-08-20
Applicant: ASML NETHERLANDS B.V.
Inventor: FANG, Wei , PU, Lingling
IPC: H01J37/24 , H01J37/28 , H01J37/304
Abstract: Systems and methods for image enhancement are disclosed. A method for enhancing an image may include receiving records ((502), (506) of a performance metric for beams of the multi-beam system in an imaging process, each record associated with a beam. The method may also include determining whether an abnormality of a beam occurs based on a baseline value (504) determined using a portion (502) of the records. The method may further include providing an abnormality indication in response to the determination that the abnormality has occurred.
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公开(公告)号:WO2021037435A1
公开(公告)日:2021-03-04
申请号:PCT/EP2020/070236
申请日:2020-07-17
Applicant: ASML NETHERLANDS B.V.
Inventor: MELISSOURGOS, Georgios , DE GRAAF, Hubertus, Petrus, Adrianus , RIJPMA, Albert, Pieter , SCHOUTEN, Twan, Jacobus
IPC: H05G2/00
Abstract: An apparatus configured to determine the amount of fuel collected in a container, the fuel being used for generating an EUV radiation beam in an EUV radiation source. The apparatus comprises a force measuring device, and the force measuring device is configured to measure a force associated with the container for determining the mass of the fuel collected in the container.
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