公开(公告)号：WO2023036895A1

公开(公告)日：2023-03-16

申请号：PCT/EP2022/075036

申请日：2022-09-08

Applicant: CARL ZEISS SMT GMBH

Inventor： AUTH, Nicole ,  RHINOW, Daniel ,  FETTIG, Rainer

IPC: G03F1/74 ,  H01J37/304 ,  H01J37/305

Abstract: The present invention relates to a method (1800) for repairing at least one defect (320) of a sample (205, 300, 1500) using a focused particle beam (227), comprising the steps of: (a) producing (1850) at least one first local, electrically conductive sacrificial layer (400, 500) on the sample (205, 300, 1500), wherein the first local, electrically conductive sacrificial layer (400, 500) has a first portion (410, 510) and at least one second portion (420, 530, 540, 550, 560), wherein the first portion (410, 510) is adjacent to the at least one defect (320) and wherein the first portion (410, 510) and the at least one second portion (420, 530, 540, 550, 560) are electrically conductively connected to one another (570, 580); and (b) producing (1860) at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) on the at least one second portion (420, 530, 540, 550, 560) of the first local, electrically conductive sacrificial layer (400, 500) for the purposes of correcting a drift of the focused particle beam (227) in relation to the at least one defect (320) while the at least one defect (320) is being repaired.

公开(公告)号：WO2022211910A1

公开(公告)日：2022-10-06

申请号：PCT/US2022/015959

申请日：2022-02-10

Applicant: APPLIED MATERIALS, INC.

Inventor： MURPHY, Paul J. ,  SINCLAIR, Frank ,  LU, Jun ,  TIEGER, Daniel ,  RENAU, Anthony

IPC: H01J37/304 ,  H01J37/26 ,  H01J37/317 ,  H01J2237/24585 ,  H01J37/05 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32082

Abstract: An ion implanter may include an ion source, arranged to generate a continuous ion beam, a DC acceleration system, to accelerate the continuous ion beam, as well as an AC linear accelerator to receive the continuous ion beam and to output a bunched ion beam. The ion implanter may also include an energy spreading electrode assembly, to receive the bunched ion beam and to apply an RF voltage between a plurality of electrodes of the energy spreading electrode assembly, along a local direction of propagation of the bunched ion beam.

公开(公告)号：WO2022192088A1

公开(公告)日：2022-09-15

申请号：PCT/US2022/018981

申请日：2022-03-04

Applicant: NIKON CORPORATION

Inventor： TYMINSKI, Jacek Kazimierz ,  BINNARD, Michael Birk

IPC: H01J37/304

Abstract: Directed energy beam deflections are compensated by mapping pixel coordinates of an image of a patterning field to patterning field spatial coordinates. For example, electron beam scanning is compensated by imaging calibration features defined on a reticle to produce a mapping between pixel and physical coordinates. An electron beam is scanned to produce cathodoluminescence at a plurality of scan locations in a patterning field. With the pixel coordinate mapping, an image of the cathodoluminescence is used to determine compensated scan drive values. Other directed energy beam deflections can be similarly compensated.

公开(公告)号：WO2020168328A2

公开(公告)日：2020-08-20

申请号：PCT/US2020/018516

申请日：2020-02-17

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： DELUCA, James ,  RAY, Andy ,  DEMARIO, Neil ,  MOLLICA, Rosario

IPC: H01J37/304 ,  H01J37/317

Abstract: An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.

公开(公告)号：WO2020131239A2

公开(公告)日：2020-06-25

申请号：PCT/US2019/060003

申请日：2019-11-06

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： NOURI, Yusef

IPC: H01J37/317 ,  H01J37/304 ,  H01J37/08

Abstract: The present invention is directed to circuits, systems, and methods to quickly to quench an arc that may form between high voltage electrodes associated with an ion source to shorten the duration of the arc and mitigate non-uniform ion implantations. In one example, an arc detection circuit for detecting an arc in an ion implantation system includes an analog-to-digital converter (ADC) and an analysis circuit. The ADC is configured to convert a sensing current indicative of a current being supplied to an electrode in the ion implantation system to a digital current signal that quantifies the sensing current. The analysis circuit is configured to analyze the digital current signal to determine if the digital current signal meets threshold parameter value and in response to the digital current signal meeting the threshold parameter value, provide an arc detection signal to a trigger control circuit that activates an arc quenching mechanism.

公开(公告)号：WO2019091752A1

公开(公告)日：2019-05-16

申请号：PCT/EP2018/078633

申请日：2018-10-18

Applicant: ARCAM AB

Inventor： HELLESTAM, Calle ,  FAGER, Mattias

IPC: H01J37/304 ,  H01J3/02 ,  B29C64/153 ,  B29C64/393 ,  B22F3/105

CPC classification number: G06T7/001 ,  B22F3/1055 ,  B29C64/153 ,  B29C64/393 ,  B33Y30/00 ,  B33Y40/00 ,  H01J3/028 ,  H01J37/222 ,  H01J37/304 ,  H01J2237/065 ,  H01J2237/30433 ,  H01J2237/3128

Abstract: A method for detecting electron beam filament wear in an electron beam source, the method comprising the steps of: enlarging a beam spot emanating from the electron beam source on a work table to a predetermined minimum size, capturing an image of the beam spot on the work table by a camera, comparing the captured image of the beam spot with a reference image, and detecting filament wear if the captured image is deviating more than a predetermined value from the reference image.

公开(公告)号：WO2018197959A1

公开(公告)日：2018-11-01

申请号：PCT/IB2018/050910

申请日：2018-02-14

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： ZHANG, Daliang ,  HAN, Yu ,  LI, Kun ,  ZHU, Yihan

IPC: H01J37/28 ,  H01J37/20 ,  H01J37/22 ,  H01J37/147 ,  H01J37/304 ,  H01J37/26

Abstract: A system and method involve applying an electron beam to a sample and obtaining an image of the sample with the applied electron beam. An orientation of the sample relative to the sample's zone axis is automatically determined based on a distribution of reflections in the image. The orientation of the sample is automatically adjusted to align with the sample's zone axis based on the determined orientation.

公开(公告)号：WO2016138086A1

公开(公告)日：2016-09-01

申请号：PCT/US2016/019281

申请日：2016-02-24

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： FARLEY, Marvin ,  SAKASE, Takao ,  FOLEY, Joseph

IPC: H01J37/304 ,  H01J37/317 ,  H01J37/32

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/0041 ,  H01J2237/0203 ,  H01J2237/24507 ,  H01J2237/304 ,  H01J2237/31701 ,  H01L22/14

Abstract: Charge monitor apparatus and methods are provided for determining a cumulative charge experienced by a workpiece during ion implantation. In one aspect, a charge monitor having a Langmuir probe 126 is provided, wherein a positive and negative charge rectifier 136,138 are operably coupled to the probe and configured to pass only a positive and negative charges therethrough, respectively; a positive current integrator 140 is operably coupled to the positive charge rectifier 136, wherein the positive current integrator is biased via a positive threshold voltage 142, and wherein the positive current integrator is configured to output a positive dosage 144 based, at least in part, on the positive threshold voyage; a negative current integrator 150 is operably coupled to the negative charge rectifier 138, wherein the negative current integrator is biased via a negative threshold voltage 152, and wherein the negative current integrator is configured to output a negative dosage 154 based, at least in part, on the negative threshold voltage; a positive charge counter 146 and a negative charge counter 156 are configured to respectively receive the output from the positive current integrator and negative current integrator in order to provide a respective cumulative positive charge value 148 and cumulative negative charge value 158 associated with the respective positive charge and negative charge.

Abstract translation: 提供充电监测装置和方法，用于确定在离子注入期间由工件经历的累积电荷。 在一个方面，提供了具有朗缪尔探针126的电荷监测器，其中正和负电荷整流器136,138可操作地耦合到探针并且被配置为分别仅通过正和负电荷; 正电流积分器140可操作地耦合到正电荷整流器136，其中正电流积分器经由正阈值电压142被偏置，并且其中正电流积分器被配置为输出正剂量144，至少部分地， 在积极的航程上; 负电流积分器150可操作地耦合到负电荷整流器138，其中负电流积分器经由负阈值电压152被偏置，并且其中负电流积分器被配置为输出负剂量154，至少部分地， 对负阈值电压; 正电荷计数器146和负电荷计数器156被配置为分别接收来自正电流积分器和负电流积分器的输出，以便提供与相应的正电荷相关联的相应的累积正电荷值148和累积负电荷值158 和负电荷。

公开(公告)号：WO2014179672A1

公开(公告)日：2014-11-06

申请号：PCT/US2014/036549

申请日：2014-05-02

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： TODOROV, Stanislav ,  GAMMEL, George M. ,  SPRENKLE, Richard Allen ,  HUSSEY, Norman E. ,  SINCLAIR, Frank ,  CHANG, Shengwu ,  OLSON, Joseph C. ,  TIMBERLAKE, David Roger ,  DECKER-LUCKE, Kurt T.

IPC: H01J37/304 ,  H01J37/317

CPC classification number: C23C14/54 ,  C23C14/48 ,  G21K5/00 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/31703

Abstract: A system to control an ion beam in an ion implanter includes a detector system to detect a plurality of beam current measurements of the ion beam at a first frequency and an analysis component to determine a variation of the ion beam based upon the plurality of beam current measurements, the variation corresponding to a beam current variation of the ion beam at a second frequency different from the first frequency. The system also includes an adjustment component to adjust the ion beam in response to an output of the analysis component to reduce the variation, wherein the analysis component and the adjustment component are configured to dynamically reduce the variation of the ion beam below a threshold value while the ion beam is generated in the ion implanter.

Abstract translation: 用于控制离子注入机中的离子束的系统包括检测器系统，用于以第一频率检测离子束的多个束电流测量值和分析部件，以基于多个束电流来确定离子束的变化 测量，对应于在离第一频率不同的第二频率处的离子束的束电流变化的变化。 该系统还包括调整组件以响应于分析组件的输出来调整离子束以减小变化，其中分析组件和调整组件被配置为动态地将离子束的变化降低到阈值以下，同时 在离子注入机中产生离子束。

公开(公告)号：WO2014112877A1

公开(公告)日：2014-07-24

申请号：PCT/NL2014/050024

申请日：2014-01-20

Applicant: DELMIC B.V.

Inventor： HOOGENBOOM, Jacob Pieter ,  HARING, Martijn Theo

IPC: H01J37/22 ,  H01J37/30 ,  H01J37/304 ,  G02B21/36

CPC classification number: H01J37/22 ,  G02B21/367 ,  H01J37/228 ,  H01J37/3005 ,  H01J37/3045 ,  H01J2237/225 ,  H01J2237/2482

Abstract: The invention relates to an apparatus and method for inspecting a sample, provided with an optical microscope to observe a region of interest on a sample and a charged particle system generating a focused charged particle beam to observe or modify the same or parts of the same region of interest, the apparatus provided with a control unit for electronically controlling said systems, adapted for recording two or more spectrally separated images of the region of interest on the sample, the control unit adapted for acquiring processing and representing the images as detected with said optical and said charged particle microscope systems, the unit further adapted for performing a registration procedure mutually correlating a region of interest in the optical images, wherein the apparatus is adapted for using a detection of a change in the optical images as caused therein by the charged particle beam for correlating said images.

Abstract translation: 本发明涉及一种用于检查样品的装置和方法，该样品提供有光学显微镜以观察样品上的感兴趣区域和产生聚焦带电粒子束的带电粒子系统以观察或修改相同或相同区域的相同或部分 所述设备具有用于电子地控制所述系统的控制单元，适用于在所述样本上记录所述感兴趣区域的两个或更多个频谱分离的图像，所述控制单元适于获取处理并表示所述图像， 和所述带电粒子显微镜系统，所述单元还适于执行将所述光学图像中的感兴趣区域相互关联的登记过程，其中所述装置适于使用由所述带电粒子在其中引起的光学图像的变化的检测 用于使所述图像相关联。