公开(公告)号：WO2010093871A3

公开(公告)日：2010-11-04

申请号：PCT/US2010024025

申请日：2010-02-12

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  BUFF JAMES S ,  RADOVANOV SVETLANA ,  KOO JOHN BON WOONG ,  PLATOW WILHELM P ,  SINCLAIR FRANK ,  LISCHER D JEFFREY ,  CHANEY CRAIG R ,  BORICHEVSKY STEVEN C ,  JAGTAP MAYUR ,  COBB ERIC R ,  PURSER KENNETH H ,  PATEL SHARDUL ,  BENVENISTE VICTOR M

Inventor： BUFF JAMES S ,  RADOVANOV SVETLANA ,  KOO JOHN BON WOONG ,  PLATOW WILHELM P ,  SINCLAIR FRANK ,  LISCHER D JEFFREY ,  CHANEY CRAIG R ,  BORICHEVSKY STEVEN C ,  JAGTAP MAYUR ,  COBB ERIC R ,  PURSER KENNETH H ,  PATEL SHARDUL ,  BENVENISTE VICTOR M

IPC: H01L21/265

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/08 ,  H01J37/09 ,  H01J37/304 ,  H01J2237/0453 ,  H01J2237/0458 ,  H01J2237/083 ,  H01J2237/24542

Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.

Abstract translation: 公开了使用高透明度电极改善提取离子束质量的技术。 在一个特定的示例性实施例中，可以将这些技术实现为用于离子注入的装置。 该装置可以包括用于产生离子束的离子源，其中该离子源包括具有用于离子束穿过其中的孔的面板。 该设备还可以包括一组提取电极，该组提取电极至少包括抑制电极和高透明度接地电极，其中该组提取电极可以经由面板从离子源提取离子束，并且其中高透明度的接地 电极可以被配置为优化抑制电极和高透明度接地电极之间的气体电导以改善提取的离子束质量。

公开(公告)号：WO2009152127A3

公开(公告)日：2010-03-18

申请号：PCT/US2009046701

申请日：2009-06-09

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  KURUNCZI PETER E ,  DORAI RAJESH ,  BILOIU COSTEL ,  PLATOW WILHELM P

Inventor： KURUNCZI PETER E ,  DORAI RAJESH ,  BILOIU COSTEL ,  PLATOW WILHELM P

IPC: H01L21/265

CPC classification number: H01J37/08 ,  H01J27/08 ,  H01J27/16 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/0817 ,  H01J2237/082 ,  H01J2237/0827 ,  H01J2237/304

Abstract: Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.

Abstract translation: 公开了提供多模离子源的技术。 在一个特定示例性实施例中，可以将技术实现为用于离子注入的装置，其包括以多种模式操作的离子源，使得第一模式是电弧放电模式，而第二模式是RF模式。

公开(公告)号：WO2009155500A2

公开(公告)日：2009-12-23

申请号：PCT/US2009/047929

申请日：2009-06-19

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES ,  DORAI, Rajesh ,  KURUNCZI, Peter, E. ,  PEREL, Alexander, S. ,  PLATOW, Wilhelm, P.

Inventor： DORAI, Rajesh ,  KURUNCZI, Peter, E. ,  PEREL, Alexander, S. ,  PLATOW, Wilhelm, P.

IPC: H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/04 ,  H01J37/08 ,  H01J37/09 ,  H01J2237/024 ,  H01J2237/0455 ,  H01J2237/08 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/24542

Abstract: An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion source chamber for extracting an ion beam. The electrode includes a plurality of segments partitioned within the length of the extraction slot where each of the segments is configured to be displaced in at least one direction with respect to the ion beam. A plurality of actuators are connected to the plurality of electrode segments for displacing one or more of the segments. By displacing at least one of the plurality of electrode segments, the current density of a portion of the ion beam corresponding to the position of the segment within the extraction slot is modified to provide a uniform current density beam profile associated with the extracted ion beam.

Abstract translation: 一种与离子源室一起使用或作为离子注入机处理系统的一部分以提供均匀离子束分布的电极组件。 电极组件包括具有长度为L的提取槽的电极，其与用于提取离子束的离子源室的孔径对准。 电极包括在提取槽的长度内分隔的多个段，其中每个段被配置为相对于离子束在至少一个方向上移位。 多个致动器连接到多个电极段，用于移动一个或多个段。 通过移位多个电极段中的至少一个，修改与提取槽内的段的位置相对应的一部分离子束的电流密度，以提供与提取的离子束相关联的均匀的电流密度波束轮廓。

公开(公告)号：WO2009155446A2

公开(公告)日：2009-12-23

申请号：PCT/US2009047839

申请日：2009-06-18

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  BILOIU COSTEL ,  CHANEY CRAIG R ,  COBB ERIC R ,  KOO BON-WOONG ,  PLATOW WILHELM P

Inventor： BILOIU COSTEL ,  CHANEY CRAIG R ,  COBB ERIC R ,  KOO BON-WOONG ,  PLATOW WILHELM P

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/024 ,  H01J2237/0458 ,  H01J2237/061

Abstract: In a cleaning process for an ion source chamber, an electrode positioned outside of the ion source chamber includes a suppression plug. When the cleaning gas is introduced into the source chamber, the suppression plug may engage an extraction aperture of the source chamber to adjust the gas pressure within the chamber to enhance chamber cleaning via plasma- enhanced chemical reaction. The gas conductance between the source chamber aperture and the suppression plug can be adjusted during the cleaning process to provide optimum cleaning conditions and to exhaust unwanted deposits.

Abstract translation: 在离子源室的清洁处理中，位于离子源室外的电极包括抑制塞。 当清洁气体被引入源室中时，抑制塞可以接合源室的提取孔以调节室内的气体压力，以通过等离子体增强的化学反应增强室清洁。 在清洁过程中可以调节源室孔和抑制塞之间的气体传导，以提供最佳的清洁条件并排出不需要的沉积物。

公开(公告)号：WO2010093871A2

公开(公告)日：2010-08-19

申请号：PCT/US2010/024025

申请日：2010-02-12

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES ,  BUFF, James, S. ,  RADOVANOV, Svetlana ,  KOO, John (Bon Woong) ,  PLATOW, Wilhelm, P. ,  SINCLAIR, Frank ,  LISCHER, D., Jeffrey ,  CHANEY, Craig, R. ,  BORICHEVSKY, Steven, C. ,  JAGTAP, Mayur ,  COBB, Eric, R. ,  PURSER, Kenneth, H. ,  PATEL, Shardul ,  BENVENISTE, Victor, M.

Inventor： BUFF, James, S. ,  RADOVANOV, Svetlana ,  KOO, John (Bon Woong) ,  PLATOW, Wilhelm, P. ,  SINCLAIR, Frank ,  LISCHER, D., Jeffrey ,  CHANEY, Craig, R. ,  BORICHEVSKY, Steven, C. ,  JAGTAP, Mayur ,  COBB, Eric, R. ,  PURSER, Kenneth, H. ,  PATEL, Shardul ,  BENVENISTE, Victor, M.

IPC: H01L21/265

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/08 ,  H01J37/09 ,  H01J37/304 ,  H01J2237/0453 ,  H01J2237/0458 ,  H01J2237/083 ,  H01J2237/24542

Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.

Abstract translation: 公开了使用高透明电极提高离子束质量的技术。 在一个特定的示例性实施例中，技术可以被实现为用于离子注入的装置。 该装置可以包括用于产生离子束的离子源，其中离子源包括具有离子束穿过其中的孔的面板。 该装置还可以包括至少包括抑制电极和高透明度接地电极的一组提取电极，其中所述提取电极组可以经由面板从离子源提取离子束，并且其中高透明度接地 电极可以被配置为优化抑制电极和高透明度接地电极之间的气体传导，以改善提取的离子束质量。

公开(公告)号：WO2009155446A3

公开(公告)日：2009-12-23

申请号：PCT/US2009/047839

申请日：2009-06-18

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES ,  BILOIU, Costel ,  CHANEY, Craig, R. ,  COBB, Eric, R. ,  KOO, Bon-woong ,  PLATOW, Wilhelm, P.

Inventor： BILOIU, Costel ,  CHANEY, Craig, R. ,  COBB, Eric, R. ,  KOO, Bon-woong ,  PLATOW, Wilhelm, P.

IPC: H01L21/265

Abstract: In a cleaning process for an ion source chamber, an electrode positioned outside of the ion source chamber includes a suppression plug. When the cleaning gas is introduced into the source chamber, the suppression plug may engage an extraction aperture of the source chamber to adjust the gas pressure within the chamber to enhance chamber cleaning via plasma- enhanced chemical reaction. The gas conductance between the source chamber aperture and the suppression plug can be adjusted during the cleaning process to provide optimum cleaning conditions and to exhaust unwanted deposits.

公开(公告)号：WO2009152127A2

公开(公告)日：2009-12-17

申请号：PCT/US2009/046701

申请日：2009-06-09

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES ,  KURUNCZI, Peter, E. ,  DORAI, Rajesh ,  BILOIU, Costel ,  PLATOW, Wilhelm, P.

Inventor： KURUNCZI, Peter, E. ,  DORAI, Rajesh ,  BILOIU, Costel ,  PLATOW, Wilhelm, P.

IPC: H01L21/265

CPC classification number: H01J37/08 ,  H01J27/08 ,  H01J27/16 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/0817 ,  H01J2237/082 ,  H01J2237/0827 ,  H01J2237/304

Abstract: Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.

Abstract translation: 公开了提供多模离子源的技术。 在一个特定示例性实施例中，可以将技术实现为用于离子注入的装置，其包括以多种模式操作的离子源，使得第一模式是电弧放电模式，而第二模式是RF模式。

公开(公告)号：WO2007111876A2

公开(公告)日：2007-10-04

申请号：PCT/US2007/006878

申请日：2007-03-20

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  CALLAHAN, Raymond ,  OLSON, David ,  PLATOW, Wilhelm, P. ,  TODOROV, Stanislav

Inventor： CALLAHAN, Raymond ,  OLSON, David ,  PLATOW, Wilhelm, P. ,  TODOROV, Stanislav

IPC: H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J2237/1501 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/2487 ,  H01J2237/30472 ,  H01J2237/30477 ,  H01J2237/31705

Abstract: A system, method and program product for determining parallelism of an ion beam using a refraction method, are disclosed. One embodiment includes determining a first test position of the ion beam while not exposing the ion beam to an acceleration/deceleration electrical field, determining a second test position of the ion beam while exposing the ion beam to an acceleration/deceleration electrical field, and determining the parallelism of the ion beam based on the first test position and the second test position. The acceleration/deceleration electrical field acts to refract the ion beam between the two positions when the beam is not parallel, hence magnifying any non-parallelism. The amount of refraction, or lateral shift, can be used to determine the amount of non-parallelism of the ion beam. An ion implanter system and adjustments of the ion implanter system based on the parallelism determination are also disclosed.

Abstract translation: 公开了一种使用折射方法确定离子束的平行度的系统，方法和程序产品。 一个实施例包括确定离子束的第一测试位置，同时不将离子束暴露于加速/减速电场，确定离子束的第二测试位置，同时将离子束暴露于加速/减速电场，以及确定 基于第一测试位置和第二测试位置的离子束的平行度。 当光束不平行时，加速/减速电场用于折射两个位置之间的离子束，从而放大任何非平行度。 折射量或横向偏移可用于确定离子束的非平行度。 还公开了一种离子注入机系统和基于并行度测定的离子注入机系统的调整。