Abstract:
A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source- conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.
Abstract:
A charged particle multi-beamlet lithography system comprising a beamlet generator for generating beamlets, a beamlet modulator for forming modulated beamlets, and a beamlet projector for projecting the modulated beamlets onto a target surface. The generator, modulator and/or projector comprise one or more plates provided with apertures for letting the beamlets pass through the plate. The apertures are grouped to form beam areas distinct from non-beam areas having no beamlet apertures. At least one of the plates with apertures is provided with a cooling arrangement (93) disposed on its surface in a non-beam area. The cooling arrangement comprising a plate-shaped body with an inlet (31) for receiving a cooling liquid, a plurality of cooling channels (94) for conveying the cooling liquid therein, and an outlet (35) for removing the cooling liquid. Between the cooling channels, the plate- shaped body has slots (34) that are aligned with the beam areas.
Abstract:
An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator. The plasma sheath modulator is configured to control a shape of a boundary between plasma and a plasma sheath proximate the extraction aperture. The plasma sheath modulator may include a pair of insulators positioned in the arc chamber and spaced apart by a gap positioned proximate the extraction aperture. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.
Abstract:
A charged particle detection system comprises plural detection elements and a multi-aperture plate in proximity of the detection elements. Charged particle beamlets can traverse the apertures of the multi-aperture plate to be incident on the detection elements. More than one multi-aperture plate can be provided to form a stack of multi-aperture plates in proximity of the detector. A suitable electric potential supplied to the multi-aperture plate can have an energy filtering property for the plural charged particle beamlets traversing the apertures of the plate.
Abstract:
A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.
Abstract:
The invention relates to a charged-particle-optical system for a charged particle beam exposure apparatus, said system comprising: - a first aperture means comprising at least a first substantially round aperture for partially shielding an emitted charged particle beam for forming a charged particle beamlet; - a lens system comprising at least one lens for focussing a charged particle beamlet from said first aperture within or in the vicinity of an image focal plane of said lens; - a deflector means, substantially located in said image focal plane, comprising at least one beamlet deflector for the deflection of a passing charged particle beamlet upon the reception of a control signal, and - a second aperture means comprising at least one second substantially round aperture positioned in the conjugate plane of the first aperture, and said second aperture being aligned with said first aperture and said beamlet deflector for blocking said charged particle beamlet upon deflection by said beamlet deflector and to transmit it otherwise.
Abstract:
A device for detecting X-rays radiated out of a substrate surface, said device comprising at least one X-ray detector, a resolver grating and a modulator grating, said resolver grating with at least one opening facing towards said X-ray detector is arranged in front of said X-ray detector. Said modulator grating is provided between said resolver grating and said substrate at a predetermined distance from said resolver grating and said substrate, where said modulator grating having a plurality of openings in at least a first direction, wherein said x-rays from said surface is spatially modulated with said modulator grating and resolver grating.
Abstract:
Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a column for an e-beam direct write lithography tool includes a first blanker aperture array (BAA) including a staggered array of openings having a pitch along an array direction. The array direction is orthogonal to a scan direction. Each opening has a first dimension in the array direction. The column also includes a second BAA including a staggered array of openings having the pitch along the array direction. Each opening has a second dimension in the array direction, the second dimension greater than the first dimension.
Abstract:
A charged particle lithography system for transferring a pattern onto the surface of a target, comprising a main vacuum chamber, a source chamber and an intermediate chamber, both located in the main vacuum chamber, a beam generator for generating a charged particle beam, the beam generator located in the source chamber, and a first aperture array element for generating a plurality of charged particle beamlets from the beam, the first aperture array element located in the intermediate chamber. The system is adapted for maintaining a first pressure in the main vacuum chamber, a second pressure in the intermediate chamber, and a third pressure in the source chamber, and wherein the first pressure is lower than an ambient pressure, the second pressure is lower than the first pressure, and the third pressure is lower than the second pressure.
Abstract:
The present invention concerns a charged-particle multi-beamlet system that comprises a source of charged particles (301); a first multi-aperture plate (320) having plural apertures disposed in a charged particle beam path of the system downstream of the source; a first multi-aperture selector plate (313) having plural apertures; a carrier (340), wherein the first multi-aperture selector plate is mounted on the carrier; and an actuator (350) configured to move the carrier such that the first multi-aperture selector plate is disposed in the charged particle beam path of the system downstream of the source in a first mode of operation of the system, and such that the first multi-aperture selector plate is disposed outside of the charged particle beam path in a second mode of operation of the system. The source, the first multi-aperture plate and the carrier of the system are arranged such that a first number of charged particle beamlets is generated at a position downstream of both the first multi-aperture plate and the first multi-aperture selector plate in the first mode of operation, and that a second number of charged particle beamlets is generated at the position in the second mode of operation, wherein the first number of beamlets differs from the second number of beamlets.