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    TECHNIQUES FOR GENERATING UNIFORM ION BEAM
    1.
    发明申请
    TECHNIQUES FOR GENERATING UNIFORM ION BEAM 审中-公开
    用于产生均匀离子束的技术

    公开(公告)号：WO2011081927A1

    公开(公告)日：2011-07-07

    申请号：PCT/US2010/060275

    申请日：2010-12-14

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  PLATOW, Wilhelm, P. ,  BASSOM, Neil, J. ,  KURUNCZI, Peter, F. ,  PEREL, Alexander, S. ,  CHANEY, Craig, R.

    Inventor： PLATOW, Wilhelm, P. ,  BASSOM, Neil, J. ,  KURUNCZI, Peter, F. ,  PEREL, Alexander, S. ,  CHANEY, Craig, R.

    IPC: H01J37/08 ,  H01J37/317 ,  H01J27/04

    CPC classification number: H01J37/08 ,  H01J37/3171

    Abstract: Herein an improved technique for generating uniform ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate with an ion implanter comprising an ion source. The method may comprise: introducing dopant into an ion source chamber of the ion source, the dopant may comprise molecules containing boron and hydrogen; introducing diluent into the ion source chamber, the diluent containing halogen; ionizing the dopant and the diluent into molecular ions and halogen containing ions, the molecular ions containing boron and hydrogen; extracting the molecular ions and the halogen containing ions from the ions source chamber; and directing the molecular ions toward the substrate, where the halogen containing ions may improve uniformity of the molecular ions extracted from the ion source and extend the lifetime of the ion source.

    Abstract translation: 本发明公开了一种用于产生均匀离子束的改进技术。 在一个特定的示例性实施例中，该技术可以被实现为用于使用包括离子源的离子注入机来处理衬底的方法。 该方法可以包括：将掺杂剂引入到离子源的离子源室中，掺杂剂可以包含含有硼和氢的分子; 将稀释剂引入离子源室，稀释剂含有卤素; 将掺杂剂和稀释剂电离成分子离子和含卤素的离子，含有硼和氢的分子离子; 从离子源室中提取分子离子和含卤素离子; 并且将分子离子引导到衬底，其中含卤素的离子可以改善从离子源提取的分子离子的均匀性并延长离子源的寿命。

    METHOD AND APPARATUS FOR CONTROLLING BEAM CURRENT UNIFORMITY IN AN ION IMPLANTER
    4.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING BEAM CURRENT UNIFORMITY IN AN ION IMPLANTER 审中-公开
    用于控制离子植入物中光束电流均匀性的方法和装置

    公开(公告)号：WO2009155500A3

    公开(公告)日：2010-04-15

    申请号：PCT/US2009047929

    申请日：2009-06-19

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  DORAI RAJESH ,  KURUNCZI PETER E ,  PEREL ALEXANDER S ,  PLATOW WILHELM P

    Inventor： DORAI RAJESH ,  KURUNCZI PETER E ,  PEREL ALEXANDER S ,  PLATOW WILHELM P

    IPC: H01L21/265

    CPC classification number: H01J37/3171 ,  H01J37/04 ,  H01J37/08 ,  H01J37/09 ,  H01J2237/024 ,  H01J2237/0455 ,  H01J2237/08 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/24542

    Abstract: An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion source chamber for extracting an ion beam. The electrode includes a plurality of segments partitioned within the length of the extraction slot where each of the segments is configured to be displaced in at least one direction with respect to the ion beam. A plurality of actuators are connected to the plurality of electrode segments for displacing one or more of the segments. By displacing at least one of the plurality of electrode segments, the current density of a portion of the ion beam corresponding to the position of the segment within the extraction slot is modified to provide a uniform current density beam profile associated with the extracted ion beam.

    Abstract translation: 一种与离子源室一起使用或作为离子注入机处理系统的一部分以提供均匀离子束分布的电极组件。 电极组件包括具有长度为L的提取槽的电极，其与用于提取离子束的离子源室的孔径对准。 电极包括在提取槽的长度内分隔的多个段，其中每个段被配置为相对于离子束在至少一个方向上移位。 多个致动器连接到多个电极段，用于移动一个或多个段。 通过移位多个电极段中的至少一个，修改与提取槽内的段的位置相对应的一部分离子束的电流密度，以提供与提取的离子束相关联的均匀的电流密度波束轮廓。

    DETERMINING ION BEAM PARALLELISM USING REFRACTION METHOD
    6.
    发明申请
    DETERMINING ION BEAM PARALLELISM USING REFRACTION METHOD 审中-公开
    使用折射法确定离子束平行线

    公开(公告)号：WO2007111876A3

    公开(公告)日：2007-11-08

    申请号：PCT/US2007006878

    申请日：2007-03-20

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  CALLAHAN RAYMOND ,  OLSON DAVID ,  PLATOW WILHELM P ,  TODOROV STANISLAV

    Inventor： CALLAHAN RAYMOND ,  OLSON DAVID ,  PLATOW WILHELM P ,  TODOROV STANISLAV

    IPC: H01J37/317 ,  H01L21/265

    CPC classification number: H01J37/3171 ,  H01J2237/1501 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/2487 ,  H01J2237/30472 ,  H01J2237/30477 ,  H01J2237/31705

    Abstract: A system, method and program product for determining parallelism of an ion beam (4) using a refraction method, are disclosed. One embodiment includes determining a first test position (300) of the ion beam while not exposing the ion beam to an acceleration/deceleration electrical field, determining a second test position (302) of the ion beam while exposing the ion beam to an acceleration/deceleration electrical field, and determining the parallelism of the ion beam based on the first test position and the second test position. The acceleration/deceleration electrical field acts to refract the ion beam between the two positions when the beam is not parallel, hence magnifying any non-parallelism. The amount of refraction, or lateral shift, can be used to determine the amount of non-parallelism of the ion beam. An ion implanter system (10) and adjustments of the ion implanter system based on the parallelism determination are also disclosed.

    Abstract translation: 公开了一种使用折射方法确定离子束（4）的平行度的系统，方法和程序产品。 一个实施例包括确定离子束的第一测试位置（300），同时不将离子束暴露于加速/减速电场，确定离子束的第二测试位置（302），同时将离子束暴露于加速/ 减速电场，以及基于第一测试位置和第二测试位置确定离子束的平行度。 当光束不平行时，加速/减速电场用于折射两个位置之间的离子束，从而放大任何非平行度。 折射量或横向偏移可用于确定离子束的非平行度。 还公开了一种离子注入系统（10）和基于并行度测定的离子注入系统的调整。

    AN ION SOURCE AND A METHOD FOR IN-SITU CLEANING THEREOF
    9.
    发明申请
    AN ION SOURCE AND A METHOD FOR IN-SITU CLEANING THEREOF 审中-公开
    一种离子源及一种原位清洁的方法

    公开(公告)号：WO2010017114A2

    公开(公告)日：2010-02-11

    申请号：PCT/US2009052530

    申请日：2009-08-03

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  KOO BON-WOONG ,  CAMPBELL CHRIS ,  CHANEY CRAIG R ,  LINDBERG ROBERT ,  PEREL ALEXANDER S ,  PLATOW WILHELM P

    Inventor： KOO BON-WOONG ,  CAMPBELL CHRIS ,  CHANEY CRAIG R ,  LINDBERG ROBERT ,  PEREL ALEXANDER S ,  PLATOW WILHELM P

    IPC: H01L21/265

    CPC classification number: H01J27/022 ,  H01J27/02 ,  H01J27/14 ,  H01J37/08 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/31705

    Abstract: An ion source and method of cleaning are disclosed. One or more heating units are placed in close proximity to the inner volume of the ion source, so as to affect the temperature within the ion source, in one embodiment, one or more walls of the ion source have recesses into which heating units are inserted. In another embodiment, one or more wails of the ion source are constructed of a conducting circuit and an insulating layer. By utilizing heating units near the ion source, it is possible to develop new methods of cleaning the ion source. Cleaning gas is flowed into the ion source, where it is ionized, either by the cathode, as in normal operating mode, or by the heat generated by the heating units. The cleaning gas is able to remove residue from the walls of the ion source more effectively due to the elevated temperature.

    Abstract translation: 公开了一种离子源和清洁方法。 一个或多个加热单元紧邻离子源的内部容积放置，以便影响离子源内的温度，在一个实施例中，离子源的一个或多个壁具有凹槽，加热单元插入其中 。 在另一个实施例中，离子源的一个或多个壁由导电电路和绝缘层构成。 通过利用离子源附近的加热单元，可以开发清洁离子源的新方法。 清洁气体通过阴极流入离子源，在正常工作模式下，或者由加热单元产生的热量，离子源被离子化。 由于温度升高，清洁气体能够更有效地去除离子源壁上的残留物。

    TECHNIQUES FOR OPTICAL ION BEAM METROLOGY
    10.
    发明申请
    TECHNIQUES FOR OPTICAL ION BEAM METROLOGY 审中-公开
    光学离子束测量技术

    公开(公告)号：WO2009042461A3

    公开(公告)日：2009-05-22

    申请号：PCT/US2008076624

    申请日：2008-09-17

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  PEREL ALEXANDER S ,  PLATOW WILHELM P ,  CHANEY CRAIG R ,  SINCLAIR FRANK ,  ROCKWELL TYLER

    Inventor： PEREL ALEXANDER S ,  PLATOW WILHELM P ,  CHANEY CRAIG R ,  SINCLAIR FRANK ,  ROCKWELL TYLER

    IPC: H01L21/265

    CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/2445 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/2482 ,  H01J2237/30472

    Abstract: Techniques for providing optical ion beam metrology are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for controlling beam density profile, the apparatus may include one or more camera systems to capture at least one image of an ion beam and a control system coupled to the one or more camera systems to control a beam density profile of the ion beam. The control system may further include a dose profiler to provide information to one or more ion implantation components in at least one of a feedback loop and a feedforward loop to improve dose and angle uniformity.

    Abstract translation: 公开了用于提供光学离子束测量的技术。 在一个特定的示例性实施例中，所述技术可以被实现为用于控制射束密度分布的设备，所述设备可以包括一个或多个照相机系统以捕获离子束的至少一个图像以及耦合到所述一个或多个照相机的控制系统 系统来控制离子束的束密度分布。 控制系统可以进一步包括剂量分析器，以向反馈回路和前馈回路中的至少一个中的一个或多个离子注入部件提供信息，以改善剂量和角度均匀性。

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