公开(公告)号：WO2006107703A1

公开(公告)日：2006-10-12

申请号：PCT/US2006/011644

申请日：2006-03-13

Applicant: APPLIED MATERIALS, INC. ,  YOKOTA, Yoshitaka ,  RAMAMURTHY, Sundar ,  ACHUTHARAMAN, Vedapuram ,  CZARNIK, Cory ,  BEHDJAT, Mehran ,  OLSEN, Christopher

Inventor： YOKOTA, Yoshitaka ,  RAMAMURTHY, Sundar ,  ACHUTHARAMAN, Vedapuram ,  CZARNIK, Cory ,  BEHDJAT, Mehran ,  OLSEN, Christopher

IPC: H01L21/302 ,  C23F1/02

CPC classification number: H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

Abstract: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator (134) is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber (10) through a water-cooled injector (140) projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O 2 , enter the chamber through another inlet (122) . The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800°C. Alternatively, the oxidation may be performed in an LPCVD chamber (210) including a pedestal heater (230) and a showerhead gas injector (220) in opposition to the pedestal (216).

Abstract translation: 一种用于氧化半导体集成电路中的材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器（134）能够产生至少70％的臭氧流。 臭氧通过突出到室中的水冷喷射器（140）进入RTP室（10）。 诸如氢气以提高氧化速率的其它气体，诸如氮气或O 2 O 2的稀释气体通过另一个入口（122）进入腔室。 该室被保持在低于20托的低压，并且基板有利地保持在低于800℃的温度。 或者，氧化可以在包括基座加热器（230）和与基座（216）相对的喷头气体喷射器（220）的LPCVD腔室（210）中进行。