公开(公告)号：WO2020180584A1

公开(公告)日：2020-09-10

申请号：PCT/US2020/020031

申请日：2020-02-27

Applicant: APPLIED MATERIALS, INC.

Inventor： BHAT, Sanjay ,  JINDAL, Vibhu ,  XIAO, Wen

IPC: C23C14/34 ,  C23C14/56 ,  C23C14/35 ,  H01J37/34 ,  G03F1/22

Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets.

公开(公告)号：WO2020033836A1

公开(公告)日：2020-02-13

申请号：PCT/US2019/045917

申请日：2019-08-09

Applicant: APPLIED MATERIALS, INC.

Inventor： BHAT, Sanjay ,  JINDAL, Vibhu ,  MANOHARAN, Kamatchigobinath

IPC: C23C14/56 ,  C23C14/34 ,  H01J37/32 ,  H01J37/34

Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising one or more of contours that reduce particle defects, temperature control and or measurement and and/or voltage particle traps to reduce processing defects.

公开(公告)号：WO2021113590A1

公开(公告)日：2021-06-10

申请号：PCT/US2020/063235

申请日：2020-12-04

Applicant: APPLIED MATERIALS, INC.

Inventor： BHAT, Sanjay ,  JINDAL, Vibhu

IPC: C23C14/50 ,  C23C14/56 ,  C23C14/34

Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising a deposition ring assembly comprising an inner and outer deposition ring which reduces particle defects.

公开(公告)号：WO2020214908A1

公开(公告)日：2020-10-22

申请号：PCT/US2020/028668

申请日：2020-04-17

Applicant: APPLIED MATERIALS, INC.

Inventor： XIAO, Wen ,  JINDAL, Vibhu ,  BHAT, Sanjay

IPC: C23C14/50 ,  C23C14/34 ,  C23C14/54

Abstract: A physical vapor deposition chamber comprising a tilting substrate support is described. Methods of processing a substrate are also provided comprising tilting at least one of the substrate and the target to improve the uniformity of the layer on the substrate from the center of the substrate to the edge of the substrate. Process controllers are also described which comprise one or more process configurations causing the physical deposition chamber to perform the operations of rotating a substrate support within the physical deposition chamber and tilting the substrate support at a plurality of angles with respect to a horizontal axis.

公开(公告)号：WO2020180585A1

公开(公告)日：2020-09-10

申请号：PCT/US2020/020033

申请日：2020-02-27

Applicant: APPLIED MATERIALS, INC.

Inventor： JINDAL, Vibhu ,  XIAO, Wen ,  BHAT, Sanjay

IPC: C23C14/34 ,  C23C14/14 ,  C23C14/06 ,  C23C14/00 ,  G03F1/22

Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets. A process for improving reflectivity from a multilayer stack is also disclosed.

公开(公告)号：WO2020180582A1

公开(公告)日：2020-09-10

申请号：PCT/US2020/020029

申请日：2020-02-27

Applicant: APPLIED MATERIALS, INC.

Inventor： XIAO, Wen ,  JINDAL, Vibhu ,  BHAT, Sanjay

IPC: C23C14/34 ,  C23C14/56 ,  C23C14/35 ,  C23C14/14 ,  H01J37/34 ,  G03F1/22

Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets.

公开(公告)号：WO2020154582A1

公开(公告)日：2020-07-30

申请号：PCT/US2020/014930

申请日：2020-01-24

Applicant: APPLIED MATERIALS, INC.

Inventor： XIAO, Wen ,  BHAT, Sanjay ,  LIU, Shuwei ,  JINDAL, Vibhu

IPC: C23C14/34 ,  H01J37/34 ,  G03F1/22 ,  G03F1/52

Abstract: Physical vapor deposition target assemblies, PVD chambers including target assemblies and methods of manufacturing EUV mask blanks using such target assemblies are disclosed. The target assembly includes a target shield adjacent the target and surrounding the peripheral edges of the target, the target shield comprising an insulating material and a non-insulating outer peripheral fixture to secure the target shield to the assembly.

公开(公告)号：WO2019246183A1

公开(公告)日：2019-12-26

申请号：PCT/US2019/037874

申请日：2019-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： JINDAL, Vibhu ,  BHAT, Sanjay

IPC: C23C14/35 ,  C23C14/34 ,  C23C14/04 ,  H01J37/34 ,  C23C14/14

Abstract: A deposition system, and a method of operation thereof are disclosed. The deposition system comprises a cathode assembly comprising a rotating magnet assembly including a plurality of outer peripheral magnets surrounding an inner peripheral magnet.