公开(公告)号：WO2022115398A1

公开(公告)日：2022-06-02

申请号：PCT/US2021/060445

申请日：2021-11-23

Applicant: APPLIED MATERIALS, INC.

Inventor： LI, Weimin ,  XIAO, Wen ,  JINDAL, Vibhu ,  BHAT, Sanjay

IPC: G01B11/30 ,  G01B11/24

Abstract: Apparatus and methods for measuring surface topography are described. The analysis apparatus and methods detect light reflected from the reflective backside of a cantilever assembly including a tip, calculate a background level (BGL) value obtained from an optical scan of a reference sample using a power spectral density (PSD) value obtained from a topographical scan of a reference sample to generate a correlational coefficient between the BGL and the PSD values. The correlational coefficient between the BGL and PSD values is used to measure the BGL value of additional EUV mask blanks by a topographical scan of the EUV mask blanks using the same tip mounted to the cantilever.

公开(公告)号：WO2022132578A1

公开(公告)日：2022-06-23

申请号：PCT/US2021/062773

申请日：2021-12-10

Applicant: APPLIED MATERIALS, INC.

Inventor： GAUTAM, Ribhu ,  JINDAL, Vibhu ,  MANOHARAN, Kamatchi Gobinath ,  BHAT, Sanjay ,  CHORAGUDI, Praveen Kumar ,  XIAO, Wen ,  RAMACHANDRAN, Vinodh

IPC: C23C14/34 ,  C23C14/56 ,  H01J37/34

Abstract: An ex situ physical vapor deposition (PVD) process kit conditioning apparatus configured to condition process kit components of a PVD substrate processing chamber, the ex situ PVD process kit conditioning apparatus comprising a chamber assembly, a central cathode assembly configured to mount one or more targets. The apparatus is configured to receive one or more components of a process kit of a PVD substrate processing chamber and the central cathode assembly is positioned and configured so that the apparatus deposits the defect reduction coating substantially uniformly on an inner surface of a process kit component of the PVD substrate processing chamber.

公开(公告)号：WO2021081291A1

公开(公告)日：2021-04-29

申请号：PCT/US2020/057000

申请日：2020-10-23

Applicant: APPLIED MATERIALS, INC.

Inventor： XIAO, Wen ,  BHAT, Sanjay ,  LIU, Shiyu ,  VARGHESE, Binni ,  JINDAL, Vibhu ,  ZERRADE, Azeddine

IPC: C23C14/56 ,  C23C14/34 ,  C23C14/14 ,  C23C14/06 ,  C23C14/50 ,  C23C14/35 ,  G03F1/22

Abstract: Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.

公开(公告)号：WO2021113587A1

公开(公告)日：2021-06-10

申请号：PCT/US2020/063232

申请日：2020-12-04

Applicant: APPLIED MATERIALS, INC.

Inventor： BHAT, Sanjay ,  JINDAL, Vibhu

IPC: G03F1/66 ,  G03F1/22 ,  H01L21/673 ,  G03F7/20

Abstract: Provided herein are apparatus, systems and methods for processing reticle blanks. A reticle processing system includes a support assembly having a plate coupled to a frame, and a carrier base assembly supported on the support assembly. The carrier base assembly comprises a wall extending from a top surface of the carrier base and defining a containment region for a reticle.

公开(公告)号：WO2021081289A1

公开(公告)日：2021-04-29

申请号：PCT/US2020/056997

申请日：2020-10-23

Applicant: APPLIED MATERIALS, INC.

Inventor： YOONG, Herng Yau ,  XIAO, Wen ,  JINDAL, Vibhu ,  LIU, Shuwei ,  BHAT, Sanjay ,  ZERRADE, Azeddine

IPC: C23C14/56 ,  C23C14/00 ,  C23C14/34 ,  C23C14/10 ,  C23C14/06 ,  C23C14/14 ,  C23C14/35 ,  G03F1/22

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. A method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, depositing a multilayer stack, removing the substrate from the chamber and passivating the PVD chamber.

公开(公告)号：WO2021025971A1

公开(公告)日：2021-02-11

申请号：PCT/US2020/044385

申请日：2020-07-31

Applicant: APPLIED MATERIALS, INC.

Inventor： JINDAL, Vibhu ,  LIU, Shiyu ,  BHAT, Sanjay ,  LIU, Shuwei ,  XIAO, Wen

IPC: C23C14/56 ,  C23C14/02

Abstract: Methods of cleaning a PVD chamber component, for example, process kit components are disclosed. The method comprises at least one of directing a jet of pressurized fluid at a surface of the PVD chamber component, directing pressurized carbon dioxide at the surface of the PVD chamber component, placing the PVD chamber component in a liquid and producing ultrasonic waves in the liquid to further remove contaminants from the surface of the PVD chamber component, using a plasma to clean the surface of the PVD chamber component, subjecting the PVD chamber component to a thermal cycle by heating up to a peak temperature of at least 50 °C and subsequently cooling down to room, placing the PVD chamber component in a process chamber, reducing the pressure in the process chamber below atmospheric pressure and purging the process chamber with a gas, surface conditioning the surface of the PVD chamber component, and drying the surface of the PVD chamber component by directing a gas on the surface of the PVD chamber component.

公开(公告)号：WO2019246184A1

公开(公告)日：2019-12-26

申请号：PCT/US2019/037875

申请日：2019-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： JINDAL, Vibhu ,  BHAT, Sanjay

IPC: C23C14/34 ,  C23C14/35 ,  C23C14/04 ,  C23C14/56 ,  H01J37/34

Abstract: A deposition system and a method of operation thereof are disclosed. A PVD chamber is disclosed comprising a plurality of cathode assemblies, a rotating shield below the plurality of cathode assemblies to expose one of the plurality cathode assemblies through the shroud and through a shield hole of the shield, the shield comprising a top surface including a raised peripheral frame. A shield mount sized and shaped to engage with the raised peripheral frame to secure the shield mount to the shield secures the shield mount to the shield.

公开(公告)号：WO2022140147A1

公开(公告)日：2022-06-30

申请号：PCT/US2021/063754

申请日：2021-12-16

Applicant: APPLIED MATERIALS, INC.

Inventor： GAUTAM, Ribhu ,  JINDAL, Vibhu ,  BHAT, Sanjay ,  CHORAGUDI, Praveen Kumar ,  RAMACHANDRAN, Vinodh ,  RENGARAJ, Arun

IPC: H01L21/677 ,  H01L21/67 ,  H01L21/687 ,  G03F1/22 ,  C23C14/56 ,  C23C14/58

Abstract: Substrate processing systems or platforms and methods configured to process substrates including of extreme ultraviolet (EUV) mask blanks are disclosed. Systems or platforms provide a small footprint, high throughput of substrates and minimize defect generation. The substrate processing system platform comprises a single central transfer chamber, a single transfer robot, a substrate flipping fixture, and processing chambers are positioned around the single central transfer chamber.

公开(公告)号：WO2021216658A1

公开(公告)日：2021-10-28

申请号：PCT/US2021/028325

申请日：2021-04-21

Applicant: APPLIED MATERIALS, INC.

Inventor： XIAO, Wen ,  JINDAL, Vibhu ,  LI, Weimin ,  BHAT, Sanjay ,  ZERRADE, Azeddine

IPC: G03F1/72 ,  G03F1/24 ,  G03F1/84 ,  G03F1/38

Abstract: Extreme ultraviolet (EUV) mask blanks and methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises smoothing out surface defects on a surface of a substrate.

公开(公告)号：WO2020214905A1

公开(公告)日：2020-10-22

申请号：PCT/US2020/028665

申请日：2020-04-17

Applicant: APPLIED MATERIALS, INC.

Inventor： XIAO, Wen ,  JINDAL, Vibhu ,  BHAT, Sanjay

IPC: C23C14/50 ,  C23C14/34 ,  C23C14/54

Abstract: A physical vapor deposition chamber comprising a rotating substrate support having a rotational axis, a first cathode having a radial center positioned off-center from a rotational axis of the substrate support is disclosed. A process controller comprising one or more process configurations selected from one or more of a first configuration to determine a rotation speed (v) for a substrate support to complete a whole number of rotations (n) around the rotational axis of the substrate support in a process window time (t) to form a layer of a first material on a substrate, or a second configuration to rotate the substrate support at the rotation speed (v).