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    SUCCESSIVE DEPOSITION APPARATUS AND SUCCESSIVE DEPOSITION METHOD
    22.
    发明申请
    SUCCESSIVE DEPOSITION APPARATUS AND SUCCESSIVE DEPOSITION METHOD 审中-公开
    成功沉积装置和成功沉积方法

    公开(公告)号：WO2012124814A1

    公开(公告)日：2012-09-20

    申请号：PCT/JP2012/056951

    申请日：2012-03-13

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. ,  SEO, Satoshi ,  IKEDA, Hisao ,  NIBOSHI, Manabu ,  MITSUHASHI, Katsunori ,  MITSUI, Seiichi ,  YAMAMOTO, Yoshitaka ,  Sharp Kabushiki Kaisha

    发明人： SEO, Satoshi ,  IKEDA, Hisao ,  NIBOSHI, Manabu ,  MITSUHASHI, Katsunori ,  MITSUI, Seiichi ,  YAMAMOTO, Yoshitaka

    IPC分类号： C23C14/24 ,  H01L51/50 ,  H05B33/10

    CPC分类号： H01L51/56 ,  C09K11/06 ,  H01J9/22 ,  H01J9/221 ,  H01L51/001 ,  H01L51/5004 ,  H01L51/5012 ,  H01L51/5056 ,  H05B33/10

    摘要： A successive deposition apparatus by which a reduction in the luminous efficiency of a light-emitting element can be suppressed even in high-speed deposition of a light-emitting layer thereof is provided. The apparatus includes: a second deposition chamber; a third deposition chamber coupled to the second deposition chamber; a transfer unit for transferring a substrate from second deposition chamber to third deposition chamber; plural third deposition sources arranged in the substrate transfer direction in the second deposition chamber; and a fourth and fifth deposition sources alternately arranged in the transfer direction in the third deposition chamber. In the third deposition chamber, the fourth deposition source is placed nearest to the second deposition source. The fourth deposition source contains a host material, and the fifth deposition source contains a dopant material. The HOMO level of a material of the third deposition source is adjusted to that of the host material.

    摘要翻译： 提供了即使在其发光层的高速沉积中也可以抑制发光元件的发光效率降低的连续沉积装置。 该装置包括：第二沉积室; 耦合到第二沉积室的第三沉积室; 用于将衬底从第二沉积室转移到第三沉积室的转移单元; 在第二沉积室中沿着基板传送方向布置的多个第三沉积源; 以及在第三沉积室中沿传送方向交替布置的第四和第五沉积源。 在第三沉积室中，第四沉积源被放置成最靠近第二沉积源。 第四沉积源包含主体材料，第五沉积源包含掺杂剂材料。 将第三沉积源的材料的HOMO能级调整为主体材料的HOMO能级。

    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING THE SAME
    25.
    发明申请
    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    发光元件，发光装置及其制造方法

    公开(公告)号：WO2011027653A1

    公开(公告)日：2011-03-10

    申请号：PCT/JP2010/063595

    申请日：2010-08-04

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. ,  SHITAGAKI, Satoko ,  SEO, Satoshi

    发明人： SHITAGAKI, Satoko ,  SEO, Satoshi

    IPC分类号： H05B33/12 ,  H01L51/50

    CPC分类号： H01L51/5012 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/504 ,  H01L51/5048 ,  H01L2251/552

    摘要： Disclosed is a light-emitting element which includes a first light-emitting layer over and in contact with a hole-transport layer and a second light-emitting layer over and in contact with the first light-emitting layer. The first and the second light-emitting layers contain a bipolar host material and an emissive guest material. The guest material in the first light-emitting layer has a lower ability for capturing a hole than a guest material in the second light-emitting layer; therefore, the hole-transport property of the first light-emitting layer can be controlled to be higher than that of the second light-emitting layer. The difference in hole-transport property between the first and second light-emitting layers allows a recombination region to be widely spread in the light-emitting layers. An anti-reducing material may be provided in the hole-transport layer, which prevents the hole-transport layer from being reduced by electrons which fail to undergo recombination in the light-emitting layers.

    摘要翻译： 公开了一种发光元件，其包括与空穴传输层相接触并与第一发光层接触的第一发光层和与第一发光层接触的第二发光层。 第一和第二发光层包含双极主体材料和发射客体材料。 第一发光层中的客体材料比第二发光层中的客体材料具有较低的捕获孔的能力; 因此，可以将第一发光层的空穴传输特性控制为高于第二发光层的空穴传输性。 第一发光层和第二发光层之间的空穴传输特性的差异允许复合区域在发光层中广泛扩散。 可以在空穴传输层中提供防还原材料，防止空穴传输层被发光层中不能再次发生复合的电子而被还原。

    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING THE SAME
    26.
    发明申请
    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    发光元件，发光装置及其制造方法

    公开(公告)号：WO2010137733A1

    公开(公告)日：2010-12-02

    申请号：PCT/JP2010/059398

    申请日：2010-05-27

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. ,  SHITAGAKI, Satoko ,  SUZUKI, Tsunenori ,  SEO, Satoshi

    发明人： SHITAGAKI, Satoko ,  SUZUKI, Tsunenori ,  SEO, Satoshi

    IPC分类号： H05B33/12 ,  H01L51/50

    CPC分类号： H01L51/5036 ,  H01L51/0059 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/5052 ,  H01L2251/552

    摘要： An object is to provide a light-emitting element with high emission efficiency. Another object is to provide a light-emitting element with a long lifetime and high reliability. Another object is to provide a light-emitting element driven at low voltage. A first light-emitting layer whose one surface is in contact with a hole-transport layer, and a second light-emitting layer which is in contact with the other surface of the first light-emitting layer and includes a bipolar host material and a light-emitting substance are provided, where the hole-transport property of the first light-emitting layer is higher than that of the second light-emitting layer. A recombination region of holes and electrons is preferably provided in the light-emitting layer. The hole-transport layer preferably includes an anti-reducing substance.

    摘要翻译： 目的在于提供发光效率高的发光元件。 另一个目的是提供具有长寿命和高可靠性的发光元件。 另一个目的是提供一种以低电压驱动的发光元件。 一个表面与空穴传输层接触的第一发光层和与第一发光层的另一个表面接触并包括双极主体材料和光的第二发光层 提供了第一发光层的空穴传输特性高于第二发光层的空穴传输特性的发光物质。 优选在发光层中设置空穴和电子的复合区域。 空穴传输层优选包含抗还原物质。

    DEPOSITION METHOD AND MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE
    27.
    发明申请
    DEPOSITION METHOD AND MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE 审中-公开
    发光装置的沉积方法和制造方法

    公开(公告)号：WO2009107548A1

    公开(公告)日：2009-09-03

    申请号：PCT/JP2009/052943

    申请日：2009-02-13

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. ,  YAMAZAKI, Shunpei ,  TANAKA, Koichiro ,  IBE, Takahiro ,  SEO, Satoshi

    发明人： YAMAZAKI, Shunpei ,  TANAKA, Koichiro ,  IBE, Takahiro ,  SEO, Satoshi

    IPC分类号： H05B33/10 ,  C23C14/24 ,  C23C14/28 ,  H01L51/50

    CPC分类号： H01L51/0013 ,  C23C14/048 ,  H01L51/56

    摘要： Part of a material layer is deposited on a deposition target surface of a second substrate by steps of providing a first substrate having a light absorption layer and a material layer in contact with the light absorption layer over one of surfaces; making a surface of the first substrate over which the material layer is formed and a deposition target surface of a second substrate face to each other; depositing part of the material layer on the deposition target surface of the second substrate in such a manner that irradiation with laser light of which repetition rate is greater than or equal to 10 MHz and pulse width is greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat part of the material layer overlapping with the light absorption layer.

    摘要翻译： 材料层的一部分通过以下步骤沉积在第二衬底的沉积靶表面上：通过提供具有光吸收层的第一衬底和与光吸收层接触的材料层在一个表面上的步骤; 制作形成材料层的第一基板的表面和第二基板的沉积目标表面彼此面对; 在第二基板的沉积靶表面上沉积材料层的一部分，使得以重复率大于或等于10MHz的激光照射并且脉冲宽度大于或等于100fs并小于 或者等于10ns从第一基板的另一表面侧进行选择性地加热与光吸收层重叠的材料层的一部分。

    COMPOSITION, METHOD FOR FABRICATING LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE
    29.
    发明申请
    COMPOSITION, METHOD FOR FABRICATING LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE 审中-公开
    组合物，制造发光元件，发光元件，发光器件和电子器件的方法

    公开(公告)号：WO2008117633A1

    公开(公告)日：2008-10-02

    申请号：PCT/JP2008/053732

    申请日：2008-02-26

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. ,  INOUE, Hideko ,  SEO, Satoshi ,  SHITAGAKI, Satoko

    发明人： INOUE, Hideko ,  SEO, Satoshi ,  SHITAGAKI, Satoko

    IPC分类号： C07F15/00 ,  C09K11/06 ,  H01L51/50 ,  H05B33/10

    CPC分类号： C07F15/0033 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1044 ,  C09K2211/185 ,  H01L51/0042 ,  H01L51/0061 ,  H01L51/007 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/5012

    摘要： Objects of the present invention are to provide a composition in which an organometallic complex is dissolved and a method for fabricating a light-emitting element using the composition, and to provide a light-emitting element, a light-emitting device, and an electronic device each fabricated using the composition in which the organometallic complex is dissolved. The present invention provides a composition that includes a solvent and an organometallic complex including a ligand having a pyrazine skeleton, bonded to a Group 9 or Group 10 element. A method for fabricating light-emitting elements, which is suitable for industrial application, can be realized by the application of the composition of the present invention to fabrication of a light-emitting element. Furthermore, a light-emitting element with high emission efficiency, a light-emitting device and electronic device with low power consumption can be realized by use of the composition.

    摘要翻译： 本发明的目的是提供其中溶解有机金属配合物的组合物和使用该组合物制造发光元件的方法，并且提供发光元件，发光装置和电子装置 每个使用其中有机金属络合物溶解的组合物制造。 本发明提供一种组合物，其包含与第9族或第10族元素键合的溶剂和包含具有吡嗪骨架的配体的有机金属络合物。 通过将本发明的组合物应用于发光元件的制造，可以实现适用于工业应用的制造发光元件的方法。 此外，可以通过使用该组合物来实现具有高发光效率的发光元件，发光器件和低功耗的电子器件。