公开(公告)号：WO2021133764A1

公开(公告)日：2021-07-01

申请号：PCT/US2020/066537

申请日：2020-12-22

Applicant: WISCONSIN ALUMNI RESEARCH FOUNDATION

Inventor： HU, Jiamian ,  ZHUANG, Shihao

IPC: H01L31/102 ,  H01L43/06 ,  H01L43/10 ,  H01F10/32 ,  G02F2/02 ,  G01N21/3586 ,  G01N2201/06113

Abstract: Acoustically mediated spintronic THz emitters in which sound waves, rather than direct laser pulses, give rise to a spin current in a magnetic material via magnetoelastic coupling are provided. The THz emitters include a metal layer that acts as a light-to-acoustic transducer. Also provided are THz time-domain spectrometers (THz-TDSs) that incorporate the THz emitters.

公开(公告)号：WO2021061543A1

公开(公告)日：2021-04-01

申请号：PCT/US2020/051733

申请日：2020-09-21

Applicant: W&WSENS DEVICES INC.

Inventor： WANG, Shih-Yuan ,  WANG, Shih-Ping

IPC: H01L27/146 ,  H01L31/101 ,  H01L31/102

Abstract: Microstructure enhanced photodector arrangements uses a CMOS image sensor (CIS) wafer of crystalline Si and a CMOS Logic Processor (CLP) wafer stacked on each other for electrical interaction. The wafers can be fabricated separately and stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays are enhanced with microstructure holes. Avalanche photodiodes, single photon avalanche photodiodes and phototransistors can be laterally and/or vertically doped. Photodetectors / photosensors can have slanted sidewalls for improved optical confinement and reduced crosstalk.

公开(公告)号：WO2016210182A1

公开(公告)日：2016-12-29

申请号：PCT/US2016/039101

申请日：2016-06-23

Applicant: SUNPOWER CORPORATION ,  TOTAL MARKETING SERVICES

Inventor： SEWELL, Richard Hamilton ,  WOEHL, Robert ,  MOSCHNER, Jens Dirk ,  HARDER, Nils-Peter

IPC: H01L31/02 ,  H01L31/0392 ,  H01L31/102 ,  H01L31/042

CPC classification number: H01L31/022441 ,  H01L31/0682 ,  Y02E10/547

Abstract: Approaches for fabricating wire-based metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal wires. Each metal wire of the plurality of metal wires is parallel along a first direction to form a one-dimensional layout of a metallization layer for the solar cell.

Abstract translation: 描述了用于制造用于太阳能电池的线基金属化的方法以及所得到的太阳能电池。 在一个示例中，太阳能电池包括具有背面和相对的光接收表面的基板。 多个交替的N型和P型半导体区域设置在衬底的背面中或上方。 导电接触结构设置在多个交替的N型和P型半导体区域上。 导电接触结构包括多个金属线。 多个金属线的每个金属线沿着第一方向平行，以形成用于太阳能电池的金属化层的一维布局。

公开(公告)号：WO2016077587A3

公开(公告)日：2016-05-19

申请号：PCT/US2015/060385

申请日：2015-11-12

Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE

Inventor： MAZUR, Eric ,  FRANTA, Benjamin ,  AZIZ, Michael, J. ,  PASTOR, David

IPC: H01L21/04 ,  H01L31/102

Abstract: In one aspect, a method of processing a semiconductor substrate is disclosed, which comprises incorporating at least one dopant in a semiconductor substrate so as to generate a doped polyphase surface layer on a light-trapping surface, and optically annealing the surface layer via exposure to a plurality of laser pulses having a pulsewidth in a range of about 1 nanosecond to about 50 nanoseconds so as to enhance crystallinity of said doped surface layer while maintaining high above-bandgap, and in many embodiments sub-bandgap optical absorptance.

公开(公告)号：WO2013063038A1

公开(公告)日：2013-05-02

申请号：PCT/US2012/061581

申请日：2012-10-24

Applicant: ROSESTREET LABS, LLC

Inventor： FORCIER, Robert ,  WALUKIEWICZ, Wladyslaw

IPC: H01L31/102

CPC classification number: H01L31/03044 ,  H01L31/03048 ,  H01L31/1035 ,  H01L31/1848 ,  H01L31/1856 ,  Y02E10/544 ,  Y02P70/521

Abstract: An ultraviolet light sensor and method of manufacturing thereof are disclosed. The ultraviolet light sensor includes Group-Ill Nitride layers adjacent to a silicon wafer with one of the layers at least partially exposed such that a surface thereof can receive UV light to be detected. The Group-Ill Nitride layers include a p-type layer and an n-type layer, with p/n junctions therebetween forming at least one diode. Conductive contacts are arranged to conduct electrical current through the sensor as a function of ultraviolet light received at the outer Group- Ill Nitride layer. The Group-Ill Nitride layers may be formed from, e.g., GaN, InGaN, AlGaN, or InAlN. The sensor may include a buffer layer between one of the Group-Ill Nitride layers and the silicon wafer. By utilizing silicon as the substrate on which the UV sensor diode is formed, a UV sensor can be produced that is small, efficient, cost-effective, and compatible with other semiconductor circuits and processes. The sensor may be configured to be sensitive to a specific subtype or subband of ultraviolet radiation to be detected by selecting a specific composition of said Group-Ill Nitride layers.

Abstract translation: 公开了一种紫外光传感器及其制造方法。 紫外光传感器包括与硅晶片相邻的III族氮化物层，其中一层至少部分地暴露，使得其表面可以接收待检测的UV光。 III族氮化物层包括p型层和n型层，其中p / n结形成至少一个二极管。 导电触点被布置成根据在氮化钛外层层处接收的紫外线来传导电流通过传感器。 III族氮化物层可以由例如GaN，InGaN，AlGaN或InAlN形成。 传感器可以包括在III-III族氮化物层和硅晶片之间的缓冲层。 通过利用硅作为其上形成有UV传感器二极管的基板，可以生产小型，高效，成本有效并且与其它半导体电路和工艺兼容的UV传感器。 传感器可以被配置为对要检测的紫外线辐射的特定亚型或子带敏感，通过选择所述组III氮化物层的具体组成。

公开(公告)号：WO2011125527A1

公开(公告)日：2011-10-13

申请号：PCT/JP2011/057251

申请日：2011-03-24

Applicant: 富士フイルム株式会社 ,  ▲濱▼野 光正

Inventor： ▲濱▼野　光正

IPC: H01L51/42 ,  H01L31/102 ,  H01L27/146

CPC classification number: H01L27/14643 ,  B82Y10/00 ,  H01L27/307 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/006 ,  H01L51/4253 ,  H01L2251/308

Abstract: 　波長６００ｎｍ以上の赤色領域の吸光度を制御することができる光電変換素子、及び該光電変換素子を用いて色再現性が向上した撮像素子を提供すること。　一対の電極と、前記一対の電極間に配置された光電変換層とを含む光電変換素子であって、前記光電変換層がｐ型半導体化合物と二種類以上の異なる無置換フラーレンを含む光電変換素子。該光電変換素子を含む撮像素子。

Abstract translation: 公开了一种光电转换元件，其能够控制600nm以上的红色波长范围的吸光度; 以及使用光电转换元件并且实现了改进的颜色重现性的图像拾取元件。 具体公开的是：光电转换元件，其包括一对电极和布置在该对电极之间的光电转换层，其特征在于，所述光电转换层包含p型半导体化合物和两个或更多个 不同种类的未取代的富勒烯; 以及包括光电转换元件的图像拾取元件。

公开(公告)号：WO2011125526A1

公开(公告)日：2011-10-13

申请号：PCT/JP2011/057250

申请日：2011-03-24

Applicant: 富士フイルム株式会社 ,  鈴木 秀幸

Inventor： 鈴木　秀幸

IPC: H01L51/42 ,  H01L31/102 ,  H01L27/146

CPC classification number: H01L27/307 ,  B82Y10/00 ,  H01L27/14601 ,  H01L51/0047 ,  H01L51/0053 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/0078 ,  H01L51/0094 ,  H01L51/4273 ,  Y02E10/549

Abstract: 　光電変換素子に適用した場合に高い光電変換効率を有する光電変換素子として機能し、かつ、暗電流の絶対値が小さく、かつ室温～６０℃の温度下において、良好な特性を示す、有機光電変換素子を用いた固体撮像素子を提供する。さらに性能の温度依存性が十分小さい有機光電変換素子を提供する。　一対の電極と、前記一対の電極の間に挟持された光電変換層を含む光電変換素子であって、前記光電変換層がフラーレン又はフラーレン誘導体とｐ型有機半導体材料が混合されたバルクへテロ層であり、前記光電変換層のイオン化ポテンシャルが５．２ｅＶ以上５．６ｅＶ以下であり、前記一対の電極の少なくとも一方の電極と、前記光電変換層との間に、少なくとも一層の電子ブロッキング層を備え、光電変換層と隣接する前記電子ブロッキング層のイオン化ポテンシャルが前記光電変換層のイオン化ポテンシャルよりも大きいことを特徴とする光電変換素子。

Abstract translation: 提供一种使用有机光电转换元件的固体摄像元件，当应用于光电转换元件作为具有高光电转换效率的光电转换元件时，具有小的暗电流绝对值，并且显示良好 特性在室温至60℃之间。 还提供了一种有机光电转换元件，其性能的温度依赖性足够小。 具体地提供一种光电转换元件，其包括夹在一对电极之间的一对电极和光电转换层，所述光电转换元件的特征在于，所述光电转换层是体相异质层，其中富勒烯或富勒烯衍生物和 p型有机半导体材料混合，光电转换层的电离电位为5.2-5.6eV，在一对电极的至少一个电极和光电转换层之间设置至少一个电子阻挡层， 与光电转换层相邻的电子阻挡层的电离电位大于光电转换层的电离电位。

公开(公告)号：WO2010005381A1

公开(公告)日：2010-01-14

申请号：PCT/SE2009/050858

申请日：2009-07-02

Applicant: QUNANO AB ,  OHLSSON, Jonas ,  SAMUELSON, Lars

Inventor： OHLSSON, Jonas ,  SAMUELSON, Lars

IPC: H01L29/06 ,  H01L29/12 ,  H01L31/06 ,  H01L31/102 ,  H01L33/00

CPC classification number: H01L33/20 ,  B82Y20/00 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/035281 ,  H01L31/03529 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01S5/341 ,  Y02E10/544 ,  Y02E10/547

Abstract: The present invention provides an optoelectronic semiconductor device comprising at least one semiconductor nanowire (2), wherein the nanowire (2) comprises a nanowire core (3) and at least one shell layer (4) arranged around at least a portion of the nanowire core (3). The nanowire core (3) and the shell layer (4) form a pn or pin junction that in operation provides an active region (7) for carrier generation or carrier recombination. Quantum dots (10) adapted to act as carrier recombination centres or carrier generation centres are arranged in the active region (7). By using the nanowire core (3) as template for formation of the quantum dots (10) and the shell layer (4), quantum dots of homogeneous size and uniform distribution can be obtained. Basically, the optoelectronic semiconductor device can be used for light generation or light absorption. In the former case the optoelectronic semiconductor device is a light emitting diode or a laser diode and in the latter case the optoelectronic semiconductor device is a photoelectric device, such as a photo diode, a photo detector or a solar cell.

Abstract translation: 本发明提供一种包括至少一个半导体纳米线（2）的光电子半导体器件，其中纳米线（2）包括纳米线芯（3）和至少一个壳层（4），其围绕纳米线芯的至少一部分 （3）。 纳米线芯（3）和壳层（4）形成pn或pin结，其在操作中提供用于载流子产生或载流子复合的有源区（7）。 适于作为载体复合中心或载体生成中心的量子点（10）布置在有源区域（7）中。 通过使用纳米线芯（3）作为形成量子点（10）和壳层（4）的模板，可以获得均匀尺寸和均匀分布的量子点。 基本上，光电半导体器件可用于发光或光吸收。 在前一种情况下，光电子半导体器件是发光二极管或激光二极管，并且在后一种情况下，光电半导体器件是光电器件，例如光电二极管，光电检测器或太阳能电池。

公开(公告)号：WO99017338A1

公开(公告)日：1999-04-08

申请号：PCT/US1998/019384

申请日：1998-09-17

IPC: G01J3/02 ,  G01J3/28 ,  H01L27/12 ,  H01L27/142 ,  H01L31/0216 ,  H01L31/102 ,  H01J40/14

CPC classification number: G01J3/02 ,  G01J3/0256 ,  G01J3/2803 ,  H01L27/1203 ,  H01L31/02165

Abstract: A spectrometer (10) comprises: a semiconductor having a silicon substrate, the substrate having integrally formed thereon a plurality of layers forming photodiodes (DERT1-DETm), each of the photodiodes having an independent spectral response to an input spectra within a spectral range of the semiconductor and each of the photodiodes formed only from at least one of the plurality of layers of the semiconductor above the substrate; and, a signal processing circuit (12) for modifying signals from the photodiodes with respective weights, the weighted signals being representative of a specific spectral response. The photodiodes have different junction depths and different polycrystalline silicon and oxide coverings. The signal processing circuit applies the respective weights and sums the weighted signals. In a corresponding method, a spectrometer is manufactured by manipulating only the standard mask, materials and fabrication steps of standard semiconductor processing, and integrating the spectrometer with a signal processing circuit.

Abstract translation: 光谱仪（10）包括：具有硅衬底的半导体，所述衬底在其上整体形成有多个形成光电二极管的层（DERT1-DETm），每个光电二极管对光谱范围内的输入光谱具有独立的光谱响应 所述半导体和每个所述光电二极管仅由所述衬底上的所述半导体的所述多个层中的至少一个形成; 以及信号处理电路（12），其用相应权重修改来自所述光电二极管的信号，所述加权信号代表特定光谱响应。 光电二极管具有不同的结深度和不同的多晶硅和氧化物覆盖层。 信号处理电路应用相应的权重并对加权信号求和。 在相应的方法中，通过仅操纵标准半导体处理的标准掩模，材料和制造步骤，并将光谱仪与信号处理电路集成来制造光谱仪。

公开(公告)号：WO2022120469A1

公开(公告)日：2022-06-16

申请号：PCT/CA2021/051748

申请日：2021-12-07

Applicant: ANYON SYSTEMS INC. [CA]/[CA]

Inventor： NAJAFI-YAZDI, Alireza

IPC: G06N10/40 ,  B82Y10/00 ,  G02B6/26 ,  G02B6/42 ,  G02B6/293 ,  H01L31/102 ,  H01L39/00 ,  H03F7/00

Abstract: There is described herein a quantum computing system, quantum processor, and method of operating a quantum computing system. The quantum computing system comprises a quantum control system configured for at least one of delivery and receipt of multiplexed optical signals. At least one optical fiber is coupled to the quantum control system for carrying the multiplexed optical signals, and a quantum processor is disposed inside a cryogenics apparatus and coupled to the at least one optical fiber. The quantum processor comprises: at least one converter configured for converting between the multiplexed optical signals and microwave signals at different frequencies; and a plurality of solid-state quantum circuit elements coupled to the at least one converter and addressable by respective ones of the microwave signals at different frequencies.