公开(公告)号：WO2023034008A1

公开(公告)日：2023-03-09

申请号：PCT/US2022/040194

申请日：2022-08-12

Applicant: APPLIED MATERIALS, INC.

Inventor： CIMINO, Mauro ,  DAN, Arkaprava ,  BALUJA, Sanjeev

IPC: G05B13/04 ,  G05B11/42 ,  G05B23/02

Abstract: Embodiments disclosed herein include a method for auto-tuning a system. In an embodiment, the method comprises determining if the system is in a steady state. Thereafter, the method includes exciting the system. In an embodiment, the method comprises storing process feedback measurements from the excited system to provide a set of stored data. In an embodiment, the set of stored data is a subset of all available data generated by the excited system. In an embodiment, the method further comprises determining when the excited system returns to the steady state, and tuning the system using the set of stored data.

公开(公告)号：WO2023027970A1

公开(公告)日：2023-03-02

申请号：PCT/US2022/040991

申请日：2022-08-22

Applicant: APPLIED MATERIALS, INC.

Inventor： LIM, Fang Jie ,  TAN, Chin Wei ,  SU, Jun-Liang ,  DENG, Felix ,  KODUMURI, Sai Kumar ,  JUPUDI, Ananthkrishna ,  CHEN, Nuno Yen-Chu

IPC: H01L21/56 ,  H01L21/67 ,  H01L21/687

Abstract: Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes: applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool; placing the substrate on a pedestal in a curing chamber, wherein the substrate has an expected post-cure deflection in a first direction; inducing a curvature on the substrate in a direction opposite the first direction; and curing the substrate by heating the substrate in the curing chamber.

公开(公告)号：WO2023027915A1

公开(公告)日：2023-03-02

申请号：PCT/US2022/040480

申请日：2022-08-16

Applicant: APPLIED MATERIALS, INC.

Inventor： HONNAVAR, Kiran Shyam ,  RAJU, Srikantha ,  SHEELAVANT, Gangadhar ,  PAL, Aniruddha ,  YANG, Yao-Hung ,  KENGUNTI, Basavaraja Shankarappa

IPC: H01J37/32

Abstract: Exemplary dual-channel showerheads may include an upper plate that defines a first plurality of apertures. The showerheads may include a base having a lower plate. The lower plate may define a second plurality of apertures and a third plurality of apertures. Each of the first plurality of apertures may be fluidly coupled with a respective one of the second plurality of apertures to define a fluid path extending from a top surface of the showerhead through a bottom surface of the showerhead. The base may define a gas inlet that is fluidly coupled with the third plurality of apertures. The base may be detachably coupled with the upper plate using one or more fastening mechanisms. The showerheads may include a compressible gasket positioned between the upper plate and the lower plate.

公开(公告)号：WO2023027866A1

公开(公告)日：2023-03-02

申请号：PCT/US2022/038945

申请日：2022-07-29

Applicant: APPLIED MATERIALS ISREAL LTD. ,  APPLIED MATERIALS, INC.

Inventor： BLAYVAS, Ilya ,  ZUR, Yehuda

IPC: G01B15/02 ,  G01N23/2251 ,  H01L21/66 ,  H01J37/21 ,  H01J37/305

Abstract: Analyzing a sidewall of a hole milled in a sample to determine thickness of a buried layer includes milling the hole in the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along the sidewall of the hole. After milling, the sidewall of the hole has a known slope angle. From a perspective relative to a surface of the sample, a distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. The thickness of the buried layer is determined using the known slope angle of the sidewall, the distance, and the angle relative to the surface of the sample.

公开(公告)号：WO2023023067A1

公开(公告)日：2023-02-23

申请号：PCT/US2022/040481

申请日：2022-08-16

Applicant: APPLIED MATERIALS, INC.

Inventor： LI, Jian ,  HAMMOND, Edward P. ,  ROCHA-ALVAREZ, Juan Carlos ,  DZILNO, Dmitry A. ,  ZHANG, Wenhao

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/687 ,  H01J37/32

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body. The lid plate may define a plurality of apertures. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may include a plurality of substrate support assemblies equal to the number of apertures defined through the lid plate. Each assembly may be disposed in one of the processing regions and may include an electrostatic chuck body defining a substrate support surface that defines a substrate seat. Each assembly may include a heater embedded within the chuck body. Each assembly may include bipolar electrodes between the heater and the substrate support surface. Each assembly may include a conductive mesh embedded within the body between the heater and bipolar electrodes.

公开(公告)号：WO2023018610A1

公开(公告)日：2023-02-16

申请号：PCT/US2022/039524

申请日：2022-08-05

Applicant: APPLIED MATERIALS, INC.

Inventor： LIN, SanKuei ,  SUBRAHMANYAN, Pradeep K.

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/06

Abstract: Embodiments of this disclosure relate to methods for removing a dummy material from under a superlattice structure. In some embodiments, after removing the dummy material, it is replaced with a bottom dielectric isolation layer beneath the superlattice structure.

公开(公告)号：WO2023015126A1

公开(公告)日：2023-02-09

申请号：PCT/US2022/074220

申请日：2022-07-27

Applicant: APPLIED MATERIALS, INC.

Inventor： WANG, Ying ,  SEE, Guan Huei

IPC: H01L23/00

Abstract: Methods and apparatus for increasing a bonded area between an ultrathin die and a substrate. In some embodiments, the method may include cleaning the die and the substrate, placing the die on an upper surface of the substrate, compacting the die to the substrate using a downward force of at least one compacting roller on the die and the upper surface of the substrate to increase a bonded area between the die and the upper surface of the substrate, and annealing the die and the substrate. The compacting roller has a soft surface layer that engages with the die and the upper surface of the substrate. The soft surface layer has a Shore hardness of greater than approximately 30 and less than approximately 80. In some embodiments, the substrate and/or the compacting roller may rotate during contact with each other.

公开(公告)号：WO2023014776A1

公开(公告)日：2023-02-09

申请号：PCT/US2022/039259

申请日：2022-08-03

Applicant: APPLIED MATERIALS, INC.

Inventor： KANG, Chang Seok ,  KITAJIMA, Tomohiko ,  LEE, Gill Yong ,  KANG, Sung-Kwan

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11575

Abstract: Described is a semiconductor memory device and methods of manufacture. The semiconductor memory device comprises a memory array comprising at least one select-gate-for-drain (SGD) transistor and at least one memory transistor, the memory array having at least one strapping region and at least one strapping contact, the strapping contact connecting a select-gate-for-drain (SGD) transistor to a strapping line.

公开(公告)号：WO2023014500A1

公开(公告)日：2023-02-09

申请号：PCT/US2022/037626

申请日：2022-07-19

Applicant: APPLIED MATERIALS, INC.

Inventor： PETERSON, David, John ,  LIN, Chuang-Chia

IPC: H01L21/66 ,  H01L21/67 ,  H01J37/32 ,  H01Q9/27

Abstract: Embodiments disclosed herein include sensor devices and methods of using the sensor devices. In an embodiment, a sensor device comprises a substrate, a support extending up from the substrate, and a resonator mechanically coupled to the support. In an embodiment, the sensor device further comprises an antenna that is configured to electromagnetically couple with the resonator, wherein the antenna is connected to a transmission line in the substrate.

公开(公告)号：WO2023009303A1

公开(公告)日：2023-02-02

申请号：PCT/US2022/036792

申请日：2022-07-12

Applicant: APPLIED MATERIALS, INC.

Inventor： CEN, Xi ,  TAEWOONG, Yun ,  PETHE, Shirish A. ,  WU, Kai ,  SASAKI, Nobuyuki ,  LEI, Wei

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

Abstract: Embodiments of methods and associated apparatus for filling a feature in a substrate are provided herein. In some embodiments, a method of filling a feature in a substrate includes: depositing a seed layer of tungsten nitride in the feature via a physical vapor deposition (PVD) process; depositing a liner layer of tungsten on the seed layer of tungsten nitride in the feature via a PVD process; and subsequently filling the feature with a tungsten bulk fill via a chemical vapor deposition (CVD) process.