公开(公告)号：WO00052743A1

公开(公告)日：2000-09-08

申请号：PCT/US2000/004506

申请日：2000-02-23

IPC: H01L21/02 ,  H01L21/3115 ,  H01L21/314 ,  H01L21/316

CPC classification number: H01L28/55 ,  H01L21/31155 ,  H01L21/31691

Abstract: A method for ion implantation of high dielectric constant materials with dopants to reduce film leakage and improve resistance degradation is disclosed. Particularly, the invention relates to ion implantation of (Ba,Sr)TiO3 (BST) with donor dopants to reduce film leakage and improve resistance degradation of the BST film. The invention also relates to varying the ion implantation angle of the dopant to uniformly dope the high dielectric constant materials when they have been fabricated over a stepped structure. The invention also relates to integrated circuits having a doped thin film high dielectric material used as an insulating layer in a capacitor structure.

Abstract translation: 公开了一种用掺杂剂离子注入高介电常数材料以减少膜泄漏和改善电阻降解的方法。 特别地，本发明涉及（Ba，Sr）TiO 3（BST）与施主掺杂剂的离子注入，以减少膜泄漏并改善BST膜的抗性降解。 本发明还涉及改变掺杂剂的离子注入角度以在高介电常数材料在阶梯状结构上制造时均匀地掺杂。 本发明还涉及具有用作电容器结构中的绝缘层的掺杂薄膜高介电材料的集成电路。