公开(公告)号：WO2021046080A1

公开(公告)日：2021-03-11

申请号：PCT/US2020/048990

申请日：2020-09-02

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： BROSNAN, Sarah ,  REISS, Brian

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/306

Abstract: A chemical mechanical polishing composition for polishing a substrate having a polysilicon layer includes a water based liquid carrier, a silica abrasive, an amino acid or guanidine derivative containing polysilicon polishing accelerator, and an alkali metal salt. The composition includes less than about 500 ppm tetraalkylammonium salt and has a pH in a range from about 10 to about 11.

公开(公告)号：WO2019136197A1

公开(公告)日：2019-07-11

申请号：PCT/US2019/012258

申请日：2019-01-04

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： DOCKERY, Kevin P. ,  SINGH, Pankaj K. ,  GRUMBINE, Steven ,  LONG, Kim

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321

Abstract: The invention provides a chemical-mechanical polishing composition comprising a) surface-modified colloidal silica particles, comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of about 90 nm to about 350 nm, and a zeta potential of about -5 mV to about -35 mV at a pH of about 3, b) an iron compound, c) a stabilizing agent, d) a corrosion inhibitor, and e) an aqueous carrier. The invention also provides a method suitable for polishing a substrate.

公开(公告)号：WO2018075409A3

公开(公告)日：2018-04-26

申请号：PCT/US2017/056809

申请日：2017-10-16

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： PALLIKKARA KUTTIATOOR, Sudeep ,  HAMILTON, Charles ,  DOCKERY, Kevin, P.

IPC: C09G1/02 ,  C09K3/14 ,  B24B37/00

Abstract: The invention provides a chemical-mechanical polishing composition containing abrasive, a polyhydroxy aromatic carboxylic acid, an ionic polymer of formula (I) wherein X 1 and X 2 , Z1 and Z 2 , R 1 , R 2 , R 3 , and R 4 , and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

公开(公告)号：WO2017142885A1

公开(公告)日：2017-08-24

申请号：PCT/US2017/017858

申请日：2017-02-15

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： PETRO, Benjamin ,  WHITENER, Glenn ,  WARD, William

IPC: H01L21/321 ,  H01L21/304 ,  H01L21/306 ,  H01L21/02

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/02024 ,  H01L29/20

Abstract: Disclosed is a method of chemically-mechanically polishing a substrate. The method comprises, consists of, or consists essentially of (a) contacting a substrate containing at least one Group III-V material, with a polishing pad and a chemical-mechanical polishing composition comprising water, abrasive particles having a negative surface charge, and an oxidizing agent for oxidizing the Group III-V material in an amount of from about 0.01 wt.% to about 5 wt.%, wherein the polishing composition has a pH of from about 2 to about 5; (b) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate; and (c) abrading at least a portion of the substrate to polish the substrate. In some embodiments, the Group III-V material is a semiconductor that includes at least one element from Group III of the Periodic Table and at least one element from Group V of the Periodic Table.

Abstract translation: 公开了一种化学机械抛光基材的方法。 该方法包括以下步骤，由以下步骤组成或基本上由以下步骤组成：（a）使包含至少一种III-V族材料的基材与抛光垫和包含水的化学机械抛光组合物接触，具有负表面电荷的磨粒和 用于以约0.01重量％至约5重量％的量氧化所述III-V族材料的氧化剂，其中所述抛光组合物具有约2至约5的pH; （b）相对于基底移动抛光垫和化学机械抛光组合物; 和（c）研磨至少一部分基材以抛光基材。 在一些实施例中，III-V族材料是包括周期表第III族的至少一种元素和周期表第V族的至少一种元素的半导体。

公开(公告)号：WO2017117404A1

公开(公告)日：2017-07-06

申请号：PCT/US2016/069237

申请日：2016-12-29

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： HAINS, Alexander W. ,  LI, Tina

IPC: C09G1/02 ,  C09K3/14 ,  B24B37/04 ,  B24B37/24

CPC classification number: C09G1/02

Abstract: Described are compositions useful in methods for chemical-mechanical processing a surface of a substrate, especially a substrate that contains dielectric material, wherein the composition contains cyclodextrin and alkylamine.

Abstract translation: 描述了用于化学机械加工基材表面，特别是含有电介质材料的基材的方法中的组合物，其中所述组合物含有环糊精和烷基胺。

公开(公告)号：WO2016140968A1

公开(公告)日：2016-09-09

申请号：PCT/US2016/020261

申请日：2016-03-01

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： REISS, Brian ,  SAUTER VAN NESS, Dana ,  LAM, Viet ,  HAINS, Alexander ,  KRAFT, Steven ,  JIA, Renhe

IPC: C09K3/14 ,  H01L21/304 ,  H01L21/306

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  B24B37/20 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt.% to about 2 wt.%, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

Abstract translation: 本发明提供了一种化学机械抛光组合物，其包括第一磨料颗粒，其中第一磨料颗粒是湿法二氧化铈颗粒，其中值粒径为约40nm至约100nm，以抛光组合物的浓度存在于抛光组合物中 约0.005重量％至约2重量％，并且具有至少约300nm的粒度分布，官能化杂环，pH调节剂和水性载体，并且其中抛光组合物的pH约为 本发明还提供了一种抛光衬底，特别是包含氧化硅层的衬底与抛光组合物的方法。

公开(公告)号：WO2016065057A1

公开(公告)日：2016-04-28

申请号：PCT/US2015/056744

申请日：2015-10-21

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： CAVANAUGH, Mary ,  KRAFT, Steven ,  WOLFF, Andrew ,  CARTER, Phillip W. ,  SIKMA, Elise ,  CROSS, Jeffrey

IPC: C23F11/00 ,  C23F11/08 ,  C23F11/10 ,  C23F11/16 ,  C23F11/167

CPC classification number: B24B37/24 ,  C09D5/08 ,  C09G1/02 ,  C23F3/04 ,  C23F3/06 ,  C23F11/10 ,  H01L21/3212

Abstract: The invention provides methods of inhibiting corrosion of a substrate containing metal. The substrate can be in any suitable form. In some embodiments, the metal is cobalt. The methods can be used with semiconductor wafers in some embodiments. The invention also provides chemical-mechanical polishing compositions and methods of polishing a substrate. A corrosion inhibitor can be used in the methods and compositions disclosed herein. The inhibitor comprises an amphoteric surfactant, a sulfonate, a phosphonate, a carboxylate, an amino acid derivative, a phosphate ester, an isethionate, a sulfate, a sulfosuccinate, a sulfocinnimate, or any combination thereof.

Abstract translation: 本发明提供了抑制含金属基材腐蚀的方法。 底物可以是任何合适的形式。 在一些实施方案中，金属是钴。 在一些实施例中，该方法可以与半导体晶片一起使用。 本发明还提供化学机械抛光组合物和抛光基材的方法。 腐蚀抑制剂可用于本文公开的方法和组合物中。 抑制剂包括两性表面活性剂，磺酸盐，膦酸盐，羧酸盐，氨基酸衍生物，磷酸酯，羟乙基磺酸盐，硫酸盐，磺基琥珀酸盐，sulfocinnimate或其任何组合。

公开(公告)号：WO2016061116A1

公开(公告)日：2016-04-21

申请号：PCT/US2015/055351

申请日：2015-10-13

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： ZHANG, Ke ,  PALANISAMY CHINNATHAMBI, Selvaraj

IPC: C09K3/14 ,  H01L21/304

CPC classification number: C09G1/02 ,  B24B37/11

Abstract: A chemical mechanical polishing (CMP) composition for planarizing a nickel phosphorus (NiP) substrate comprises a suspension of colloidal silica particles and fused silica particles in an acidic aqueous carrier containing hydrogen peroxide, in which the concentration of the fused silica particles is less than or equal to the concentration of the colloidal silica particles. In some embodiments, the CMP composition includes a primary complexing agent, a secondary complexing agent, and a metal ion such as ferric ion, which is capable of reversible oxidation and reduction in the presence of hydrogen peroxide and NiP.

Abstract translation: 用于平面化镍磷（NiP）衬底的化学机械抛光（CMP）组合物包括胶体二氧化硅颗粒和熔融二氧化硅颗粒在含有过氧化氢的酸性含水载体中的悬浮液，其中熔融二氧化硅颗粒的浓度小于或等于 等于胶体二氧化硅颗粒的浓度。 在一些实施方案中，CMP组合物包括主要络合剂，仲络合剂和金属离子如铁离子，其能够在过氧化氢和NiP存在下能够可逆地氧化和还原。

公开(公告)号：WO2015171423A1

公开(公告)日：2015-11-12

申请号：PCT/US2015/028544

申请日：2015-04-30

Applicant: CABOT MICROELECTRONICS CORPORATION ,  LAU, Hon Wu ,  WHITE, Michael

Inventor： LAU, Hon Wu ,  WHITE, Michael

IPC: C09K3/14 ,  H01L21/304

CPC classification number: G09G1/02 ,  B24B37/04 ,  B24B37/044 ,  C09G1/02 ,  C09G1/04 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition including (a) an abrasive comprising wet-process silica particles, (b) a water-soluble polymer, (c) an oxidizing agent, (d) a chelating agent, (e) a pH-adjusting agent, and (f) an aqueous carrier, wherein the pH of the polishing composition is about 1 to about 7. The invention also provides a method of polishing a substrate, especially a nickel-phosphorus substrate, with the polishing composition.

Abstract translation: 本发明提供一种化学机械抛光组合物，其包括（a）包含湿法二氧化硅颗粒的磨料，（b）水溶性聚合物，（c）氧化剂，（d）螯合剂，（e） 调整剂，和（f）水性载体，其中抛光组合物的pH为约1至约7.本发明还提供了用抛光组合物研磨基材，特别是镍 - 磷基材的方法。

公开(公告)号：WO2015138295A1

公开(公告)日：2015-09-17

申请号：PCT/US2015/019399

申请日：2015-03-09

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： GRUMBINE, Steven ,  DYSARD, Jeffrey ,  FU, Lin ,  WARD, William ,  WHITENER, Glenn

IPC: C09K3/14 ,  H01L21/304

CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  C23F1/40 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract translation: 一种用于抛光具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的胶体二氧化硅磨料并具有至少6mV的永久正电荷，液体载体中的溶液中的胺化合物 ，和含铁促进剂。 用于化学机械抛光包括钨层的基板的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。