公开(公告)号：WO2013003789A1

公开(公告)日：2013-01-03

申请号：PCT/US2012/045071

申请日：2012-06-29

Applicant: INVENSENSE, INC. ,  SEEGER, Joseph ,  TCHERTKOV, Igor ,  AKYOL, Hasan ,  YARALIOGLU, Goksen, G. ,  NASIRI, Steven, S. ,  GURIN, Ilya

Inventor： SEEGER, Joseph ,  TCHERTKOV, Igor ,  AKYOL, Hasan ,  YARALIOGLU, Goksen, G. ,  NASIRI, Steven, S. ,  GURIN, Ilya

IPC: H01L21/00 ,  G01F1/20

CPC classification number: B81B7/02 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00246 ,  B81C2203/0771 ,  G01L1/144 ,  G01L1/148 ,  G01L5/0028 ,  G01L9/0072 ,  G01L15/00 ,  G01L19/0092 ,  G01L19/0636 ,  G01L19/148 ,  G01L27/007

Abstract: A system and method for providing a MEMS device with integrated electronics are disclosed. The MEMS device comprises an integrated circuit substrate and a MEMS subassembly coupled to the integrated circuit substrate. The integrated circuit substrate includes at least one circuit coupled to at least one fixed electrode. The MEMS subassembly includes at least one standoff formed by a lithographic process, a flexible plate with a top surface and a bottom surface, and a MEMS electrode coupled to the flexible plate and electrically coupled to the at least one standoff. A force acting on the flexible plate causes a change in a gap between the MEMS electrode and the at least one fixed electrode.

Abstract translation: 公开了一种用于向MEMS器件提供集成电子器件的系统和方法。 MEMS器件包括集成电路基板和耦合到集成电路基板的MEMS子组件。 集成电路基板包括耦合到至少一个固定电极的至少一个电路。 MEMS子组件包括由光刻工艺形成的至少一个支座，具有顶表面和底表面的柔性板，以及耦合到柔性板并且电耦合到至少一个支座的MEMS电极。 作用在柔性板上的力导致MEMS电极和至少一个固定电极之间的间隙的变化。

公开(公告)号：WO2011021995A1

公开(公告)日：2011-02-24

申请号：PCT/US2009/054023

申请日：2009-08-17

Applicant: SKYWORKS SOLUTIONS, INC ,  AMIR FIROUZKOUHI, Hamid, R. ,  AGARWAL, Bipul ,  AKYOL, Hasan

Inventor： AMIR FIROUZKOUHI, Hamid, R. ,  AGARWAL, Bipul ,  AKYOL, Hasan

IPC: H04B1/04 ,  H03F1/32

CPC classification number: H03F3/245 ,  H03F1/0261 ,  H03F1/3205 ,  H03F1/3241 ,  H03F1/3276 ,  H03F3/193 ,  H03F2200/18 ,  H03F2200/408 ,  H03F2200/451 ,  H04B2001/0425

Abstract: A power amplifier circuit includes an amplifier MOSFET and a predistorter MOSFET. The predistorter MOSFET source and drain are connected together, and the predistorter MOSFET is connected between the gate of the amplifier MOSFET and a second bias voltage signal. This biasing of the predistorter MOSFET causes it to provide a nonlinear capacitance at the gate of the amplifier MOSFET. The combined non-linear capacitances of the amplifier MOSFET and predistorter MOSFET provide predistortion that promotes cancellation of the distortion or nonlinearity contributed by the amplifier MOSFET alone.

Abstract translation: 功率放大器电路包括放大器MOSFET和预失真MOSFET。 预失真器MOSFET源极和漏极连接在一起，并且预失真器MOSFET连接在放大器MOSFET的栅极和第二偏置电压信号之间。 预失真器MOSFET的这种偏置使其在放大器MOSFET的栅极处提供非线性电容。 放大器MOSFET和预失真器MOSFET的组合非线性电容提供预失真，促进单独由放大器MOSFET贡献的失真或非线性的消除。

公开(公告)号：WO2019060213A1

公开(公告)日：2019-03-28

申请号：PCT/US2018/051023

申请日：2018-09-14

Applicant: APPLE INC. ,  ZHANG, Sheng ,  LE, Chengrui ,  BAE, Hopil ,  BAROUGHI, Mahdi Farrokh ,  LUM, David W. ,  ADJIWIBAWA, Adam ,  WANG, Chaohao ,  SACCHETTO, Paolo ,  YAO, Wei H. ,  DORJGOTOV, Enkhamgalan ,  SLOOTSKY, Michael ,  CARBONE, Giovanni ,  SHAEFFER, Derek K. ,  JEN, Henry C. ,  HATANAKA, Shingo ,  AKYOL, Hasan

Inventor： ZHANG, Sheng ,  LE, Chengrui ,  BAE, Hopil ,  BAROUGHI, Mahdi Farrokh ,  LUM, David W. ,  ADJIWIBAWA, Adam ,  WANG, Chaohao ,  SACCHETTO, Paolo ,  YAO, Wei H. ,  DORJGOTOV, Enkhamgalan ,  SLOOTSKY, Michael ,  CARBONE, Giovanni ,  SHAEFFER, Derek K. ,  JEN, Henry C. ,  HATANAKA, Shingo ,  AKYOL, Hasan

IPC: G09G3/3208 ,  G09G3/3233

Abstract: An electronic device includes a display having a reference array that includes a first pixel. The display also includes a first emission power supply coupled to the first pixel. The display further includes an active array having a second pixel. The display also includes a second emission power supply coupled to the second pixel.