公开(公告)号：WO2017066332A1

公开(公告)日：2017-04-20

申请号：PCT/US2016/056653

申请日：2016-10-12

Applicant: AMORPHYX, INC.

Inventor： MUIR, Sean, William

IPC: H01L21/768 ,  H01L21/3205 ,  H01L21/02

CPC classification number: H01L21/768 ,  G02F1/134363 ,  G02F1/13439 ,  G02F2001/136295 ,  H01L21/3205 ,  H01L27/1255 ,  H01L28/24 ,  H01L29/786

Abstract: Amorphous multi-component metallic films can be used to improve the performance of electronic components such as resistors, diodes, and thin film transistors. Interfacial properties of AMMFs are superior to those of crystalline metal films, and therefore electric fields at the interface of an AMMF and an oxide film are more uniform. An AMMF resistor (AMNR) can be constructed as a three-layer structure including an amorphous metal, a tunneling insulator, and a crystalline metal layer. By modifying the order of the materials, the patterns of the electrodes, and the size and number of overlap areas, the I-V performance characteristics of the AMNR are adjusted. A non-coplanar AMNR has a five-layer structure that includes three metal layers separated by metal oxide tunneling insulator layers, wherein an amorphous metal thin film material is used to fabricate the middle electrodes.

Abstract translation: 非晶多组分金属膜可用于改善电子组件如电阻器，二极管和薄膜晶体管的性能。 AMMF的界面特性优于晶体金属膜，因此AMMF和氧化膜界面处的电场更均匀。 AMMF电阻器（AMNR）可以被构造为包括非晶态金属，隧穿绝缘体和晶体金属层的三层结构。 通过修改材料的顺序，电极的图案以及重叠区域的尺寸和数量，可以调整AMNR的I-V性能特性。 非共面AMNR具有五层结构，其包括由金属氧化物隧穿绝缘层分开的三个金属层，其中非晶金属薄膜材料用于制造中间电极。

公开(公告)号：WO2017019420A8

公开(公告)日：2017-02-02

申请号：PCT/US2016/043230

申请日：2016-07-21

Applicant: OREGON STATE UNIVERSITY ,  AMORPHYX

Inventor： COWELL, E., William, III ,  NEWTON, John

IPC: G02F1/1343 ,  G02F1/1362 ,  G02F1/1368

Abstract: A physical layout for a circuit using amorphous metal non-linear resistors as active devices for an in-plane switching liquid crystal display sub-pixel is provided. The lower interconnect of the two amorphous metal non-linear resistors and the lower electrode of the storage capacitor may be concurrently deposited and patterned. The area of the storage capacitor is defined by the overlap of the data signal interconnect and the storage capacitor lower electrode, which is easily modified through the size of the lower electrode and/or the size of the data signal interconnect where it overlaps the lower electrode and does not degrade the aperture ratio of the pixel. Two embodiments of sub-pixel circuits are described. One, which employs a select line bridge, enables the use of full dot inversion of the image data. The second only allows row inversion of the image data.

公开(公告)号：WO2022076592A1

公开(公告)日：2022-04-14

申请号：PCT/US2021/053815

申请日：2021-10-06

Applicant: AMORPHYX, INCORPORATED

Inventor： MUIR, Sean William

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/49

Abstract: A thin-film transistor includes a gate electrode formed on a non-conducting substrate. A top surface of the gate electrode has an RMS roughness less than 2 nm. A gate insulator having a thickness less than 25 nm is formed on the gate electrode. A semiconductor material having a thickness less than 50 nm is formed on the gate insulator. The smooth top surface of the gate insulator promotes smooth surfaces of the semiconductor material.

公开(公告)号：WO2019191674A2

公开(公告)日：2019-10-03

申请号：PCT/US2019/024985

申请日：2019-03-29

Applicant: AMORPHYX, INCORPORATED

Inventor： MUIR, Sean, William

Abstract: Described herein are various amorphous metal thin film transistors. Embodiments of such transistors include an amorphous metal gate electrode and a channel conductor formed on a non-conducting substrate. Further embodiments of such transistors include an amorphous metal source electrode, an amorphous metal drain electrode, and a channel conductor formed on a non-conducting substrate. Methods of forming such transistors are also described.

公开(公告)号：WO2017019420A1

公开(公告)日：2017-02-02

申请号：PCT/US2016/043230

申请日：2016-07-21

Applicant: OREGON STATE UNIVERSITY ,  AMORPHYX

Inventor： COWELL, E., William ,  NEWTON, John

IPC: G02F1/1343 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: G02F1/134363 ,  G02F1/133528 ,  G02F1/136213 ,  G02F1/136286 ,  G02F2001/13625 ,  G09G3/3614 ,  G09G3/3659 ,  G09G2300/0426

Abstract: A physical layout for a circuit using amorphous metal non-linear resistors as active devices for an in-plane switching liquid crystal display sub-pixel is provided. The lower interconnect of the two amorphous metal non-linear resistors and the lower electrode of the storage capacitor may be concurrently deposited and patterned. The area of the storage capacitor is defined by the overlap of the data signal interconnect and the storage capacitor lower electrode, which is easily modified through the size of the lower electrode and/or the size of the data signal interconnect where it overlaps the lower electrode and does not degrade the aperture ratio of the pixel. Two embodiments of sub-pixel circuits are described. One, which employs a select line bridge, enables the use of full dot inversion of the image data. The second only allows row inversion of the image data.

Abstract translation: 提供了使用非晶金属非线性电阻器作为面内切换液晶显示子像素的有源器件的电路的物理布局。 可以同时沉积和图案化两个非晶金属非线性电阻器和存储电容器的下电极的下互连。 存储电容器的面积由数据信号互连和存储电容器下电极的重叠来定义，其容易地通过下电极的尺寸进行修改和/或数据信号互连的大小，其中它与下电极重叠 并且不会降低像素的开口率。 描述子像素电路的两个实施例。 一个采用选择线桥，使得能够使用图像数据的全点反转。 第二个只允许图像数据的行反转。

公开(公告)号：WO2021252934A1

公开(公告)日：2021-12-16

申请号：PCT/US2021/037065

申请日：2021-06-11

Applicant: AMORPHYX, INCORPORATED

Inventor： MUIR, Sean William

IPC: H01L27/12 ,  G09G3/00

Abstract: The present disclosure is directed to display circuitry that can be formed on a flexible substrate. The circuity includes a voltage divider formed from a first and second non-linear resistor device or a first and second transistor coupled in a diode configuration. The circuitry includes a driving thin film transistor coupled to the voltage divider. The non-linear resistor devices may include a lower electrode that is amorphous metal or a crystalline metal. The first and second transistor coupled in a diode configuration may have a lower electrode that is amorphous metal. Upper electrodes may be crystalline metal. The driving thin film transistors may have the lower electrode as amorphous or crystalline metal.

公开(公告)号：WO2020118268A1

公开(公告)日：2020-06-11

申请号：PCT/US2019/065089

申请日：2019-12-06

Applicant: AMORPHYX, INCORPORATED

Inventor： MUIR, Sean William ,  KOCH, Christopher Harold

IPC: G09G3/30 ,  G09G3/20 ,  G09G3/34

Abstract: An electronic display includes a plurality of pixels, each pixel including a data line, first and second selection lines and a common electrode. A control circuit element includes first and second diode-like elements coupled between the first and second selection lines and a charging node. A charging capacitive element is coupled between the charging node and the date line. An active pixel element is coupled between the charging node and the common electrode. The common electrode can overly the entire electronic display and is a suitable transparent conductive material. Each of the first and second diode-like elements includes an amorphous metal non-linear resistor. The active pixel element may include one of liquid crystal display circuitry, light emitting diode circuitry, and electrophoretic circuitry.

公开(公告)号：WO2019191674A3

公开(公告)日：2019-10-03

申请号：PCT/US2019/024985

申请日：2019-03-29

Applicant: AMORPHYX, INCORPORATED

Inventor： MUIR, Sean, William

IPC: H01L29/49 ,  H01L29/786 ,  H01L29/417 ,  H01L29/66

Abstract: Described herein are various amorphous metal thin film transistors. Embodiments of such transistors include an amorphous metal gate electrode and a channel conductor formed on a non-conducting substrate. Further embodiments of such transistors include an amorphous metal source electrode, an amorphous metal drain electrode, and a channel conductor formed on a non-conducting substrate. Methods of forming such transistors are also described.

公开(公告)号：WO2018009901A1

公开(公告)日：2018-01-11

申请号：PCT/US2017/041252

申请日：2017-07-07

Applicant: AMORPHYX, INCORPORATED

Inventor： MUIR, Sean, William

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3205

Abstract: Amorphous multi-component metallic films can be used to improve the performance of electronic devices such as resistors, diodes, and thin film transistors. An amorphous hot electron transistor (HET) having co-planar emitter and base electrodes provides electrical properties and performance advantages over existing vertical HET structures. Emitter and the base terminals of the transistor are both formed in an upper crystalline metal layer of an amorphous nonlinear resistor. The emitter and the base are adjacent to one another and spaced apart by a gap. The presence of the gap results in two-way Fowler-Nordheim tunneling between the crystalline metal layer and the amorphous metal layer, and symmetric I-V performance. Meanwhile, forming the emitter and base terminals in the same layer simplifies the HET fabrication process by reducing the number of patterning steps.

Abstract translation: 可以使用非晶多组分金属膜来改善诸如电阻器，二极管和薄膜晶体管之类的电子器件的性能。 具有共面发射极和基极电极的非晶热电子晶体管（HET）提供超过现有垂直HET结构的电性能和性能优势。 发射极和晶体管的基极端子均形成在非晶非线性电阻器的上部晶体金属层中。 发射器和基座彼此相邻并且间隔开一个间隙。 间隙的存在导致结晶金属层和非晶金属层之间的双向Fowler-Nordheim隧道效应和对称的I-V性能。 同时，通过减少构图步骤的数量，在同一层中形成发射极和基极端子简化了HET制造工艺。