公开(公告)号：WO2008119038A3

公开(公告)日：2009-02-05

申请号：PCT/US2008058479

申请日：2008-03-27

Applicant: TEXAS INSTRUMENTS INC ,  WALSH SHAWN T ,  BAE DONG JOO ,  DOSHI VIKRAM N

Inventor： WALSH SHAWN T ,  BAE DONG JOO ,  DOSHI VIKRAM N

IPC: H01L21/425

CPC classification number: H01L21/823814 ,  H01L21/2652 ,  H01L21/823892 ,  H01L29/66575 ,  H01L29/78

Abstract: Methods and devices for preventing channeling of dopants during ion implantation are provided. The method includes providing a semiconductor substrate and depositing a sacrificial scattering layer (205) over at least a portion a surface of the substrate, wherein the sacrificial scattering layer includes an amorphous material. The method further includes ion implanting a dopant (250) through the sacrificial scattering layer to within a depth profile (220) in the substrate. Subsequently, the sacrificial scattering layer can be removed such that erosion of the substrate surface is less than one percent of a thickness of the sacrificial scattering layer.

Abstract translation: 提供了用于在离子注入期间防止掺杂剂通道化的方法和装置。 该方法包括提供半导体衬底并在衬底的表面的至少一部分上沉积牺牲散射层（205），其中牺牲散射层包括无定形材料。 该方法还包括将掺杂剂（250）通过牺牲散射层离子注入衬底内的深度分布（220）内。 随后，可以去除牺牲散射层，使得衬底表面的侵蚀小于牺牲散射层的厚度的1％。

公开(公告)号：WO2008119038A2

公开(公告)日：2008-10-02

申请号：PCT/US2008/058479

申请日：2008-03-27

Applicant: TEXAS INSTRUMENTS INCORPORATED ,  WALSH, Shawn, T. ,  BAE, Dong, Joo ,  DOSHI, Vikram, N.

Inventor： WALSH, Shawn, T. ,  BAE, Dong, Joo ,  DOSHI, Vikram, N.

IPC: H01L21/425 ,  H01L21/8238

CPC classification number: H01L21/823814 ,  H01L21/2652 ,  H01L21/823892 ,  H01L29/66575 ,  H01L29/78

Abstract: Methods and devices for preventing channeling of dopants during ion implantation are provided. The method includes providing a semiconductor substrate and depositing a sacrificial scattering layer (205) over at least a portion a surface of the substrate, wherein the sacrificial scattering layer includes an amorphous material. The method further includes ion implanting a dopant (250) through the sacrificial scattering layer to within a depth profile (220) in the substrate. Subsequently, the sacrificial scattering layer can be removed such that erosion of the substrate surface is less than one percent of a thickness of the sacrificial scattering layer.

Abstract translation: 提供了用于在离子注入期间防止掺杂剂通道化的方法和装置。 该方法包括提供半导体衬底并在衬底的表面的至少一部分上沉积牺牲散射层（205），其中牺牲散射层包括无定形材料。 该方法还包括将掺杂剂（250）通过牺牲散射层离子注入衬底内的深度分布（220）内。 随后，可以去除牺牲散射层，使得衬底表面的侵蚀小于牺牲散射层的厚度的1％。