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    FURNACE FOR SEMICONDUCTOR MATERIAL AND METHOD
    1.
    发明申请
    FURNACE FOR SEMICONDUCTOR MATERIAL AND METHOD 审中-公开
    半导体材料与方法

    公开(公告)号：WO2013007614A1

    公开(公告)日：2013-01-17

    申请号：PCT/EP2012/063197

    申请日：2012-07-05

    Applicant: REC WAFER NORWAY AS ,  BAKKE, Per ,  VLADIMIROV, Egor ,  HOMAYONIFAR, Pouria ,  ANKER VETTRAN, Fred ,  TEIXEIRA, Alexandre

    Inventor： BAKKE, Per ,  VLADIMIROV, Egor ,  HOMAYONIFAR, Pouria ,  ANKER VETTRAN, Fred ,  TEIXEIRA, Alexandre

    IPC: C30B35/00

    CPC classification number: C30B35/00

    Abstract: A furnace for the growth of crystalline semiconductor material has a heater chamber comprising one or more heating devices, a process chamber in which the crystalline semiconductor material is grown when in use and a separator. The separator is positioned between the heater chamber and process chamber such that the material receives heat from the heating devices via the separator. The separator is provided with a number of channels having a predetermined geometry so as to allow the passage of gas through the separator. A gas flow system is arranged to cause the flow of a process gas from the heater chamber to the process chamber through the channels of the separator. Associated methods are also disclosed.

    Abstract translation: 用于晶体半导体材料生长的炉具有包括一个或多个加热装置的加热器室，在使用中生长结晶半导体材料的处理室和隔板。 分离器位于加热器室和处理室之间，使得材料经由分离器从加热装置接收热量。 分离器具有多个具有预定几何形状的通道，以允许气体通过分离器。 气体流动系统被布置成使处理气体从加热器室流到分离器的通道到处理室。 还公开了相关方法。

    METHOD FOR THE INITIAL START OF REACTION IN A PROCESS FOR THE DIRECT CHLORINATION OF SILICON METAL OR A SILICON CONTAINING MATERIAL AT A LOW TEMPERATURE
    2.
    发明申请
    METHOD FOR THE INITIAL START OF REACTION IN A PROCESS FOR THE DIRECT CHLORINATION OF SILICON METAL OR A SILICON CONTAINING MATERIAL AT A LOW TEMPERATURE 审中-公开
    用于在低温下直接氯化硅金属或含硅材料的方法中的反应初始开始的方法

    公开(公告)号：WO2008136682A1

    公开(公告)日：2008-11-13

    申请号：PCT/NO2008/000155

    申请日：2008-05-02

    Applicant: NORSK HYDRO ASA ,  BAKKE, Per ,  GIBALA, Robert ,  SVALESTUEN, Jorild, Margrete ,  OI, Grete, Viddal

    Inventor： BAKKE, Per ,  GIBALA, Robert ,  SVALESTUEN, Jorild, Margrete ,  OI, Grete, Viddal

    IPC: C01B33/107 ,  B01J8/00

    CPC classification number: C01B33/10726 ,  C01B33/10721

    Abstract: Method for the initial start of reaction when producing silicon tetrachloride by reaction of silicon metal, ferrosilicon, silicon oxide, and/or silicon carbide with chlorine in fluid bed, fixed bed or disappearing bed reactors. The temperature at the start of chlorination (ignition) is at or close to ambient temperature (room temperature), whereby a small amount of an ignition or reaction initiation material such as an alloy and/or compound that readily reacts exothermally with chlorine at or close to ambient temperature thereby raising the temperature of the adjacent silicon or silicon containing material to a temperature above the chlorination ignition temperature of silicon or the silicon containing material.

    Abstract translation: 通过在流化床，固定床或消失式反应器中通过硅金属，硅铁，氧化硅和/或碳化硅与氯的反应来生产四氯化硅来初始开始反应的方法。 氯化开始时的温度（点火）处于或接近环境温度（室温），由此少量的点火或反应引发材料如合金和/或化合物容易与氯气接近或接近地发生反应 从而将相邻硅或含硅材料的温度升高到高于硅或含硅材料的氯化点火温度的温度。

    A COMBINATION OF CASTING PROCESS AND ALLOY COMPOSITIONS RESULTING IN CAST PARTS WITH SUPERIOR COMBINATION OF ELEVATED TEMPERATURE CREEP PROPERTIES, DUCTILITY AND CORROSION PERFORMANCE
    3.
    发明申请
    A COMBINATION OF CASTING PROCESS AND ALLOY COMPOSITIONS RESULTING IN CAST PARTS WITH SUPERIOR COMBINATION OF ELEVATED TEMPERATURE CREEP PROPERTIES, DUCTILITY AND CORROSION PERFORMANCE 审中-公开
    铸造工艺和合金组合物的结合与超高温组合的高温蠕变性能，腐蚀性能和腐蚀性能

    公开(公告)号：WO2007054152A1

    公开(公告)日：2007-05-18

    申请号：PCT/EP2006/009082

    申请日：2006-09-19

    Applicant: NORSK HYDRO ASA ,  BAKKE, Per ,  HAAKON, Westengen

    Inventor： BAKKE, Per ,  HAAKON, Westengen

    IPC: B22D21/00 ,  B22D17/08 ,  C22C23/02 ,  C22C23/06

    CPC classification number: B22D21/007 ,  B22D17/00 ,  C22C23/02 ,  C22C23/06

    Abstract: A process for casting a magnesium alloy consisting of 2,0 - 6,00 % by weight of aluminium, 3,00 - 8,00 % by weight of rare earth metals (RE-metals), the ratio of the amount of RE-metals to the amount of aluminium expressed as % by weight being larger than 0,8, at least 40 % by weight of the RE-metals being cerium, less than 0,5 % by weight of manganese, less than 1,00 % by weight of zinc, less than 0,01 % by weight of calcium less than 0,01 % by weight of strontium and the balance being magnesium and unavoidable impurities, the total impurity level being below 0,1 % by weight, wherein the alloy is cast in a die the temperature of which is controlled in the range of 180-340°C, the die is filled in a time which expressed in milliseconds is equal to the product of a number between 5 and 500 multiplied by the average part thickness expressed in millimeter, the static metal pressures being maintained during casting between 20-70 MPa and is subsequently intensified up to 180 MPa.

    Abstract translation: 铸造由2,0-6,00重量％铝，3,00-8.00重量％稀土金属（RE-金属）组成的镁合金的方法，RE- 金属与铝的重量百分比大于0.8的金属，至少40重量％的RE-金属是铈，小于0.5重量％的锰，小于1,00％ 锌的重量小于0.01重量％的钙，小于0.01重量％的锶，余量为镁和不可避免的杂质，总杂质含量低于0.1重量％，其中合金为 浇铸在模具中，其温度控制在180-340℃的范围内，模具填充在以毫秒为单位的时间内，其数量等于表示的平均部件厚度的5至500之间的乘积 以毫米计，静态金属压力在铸造期间保持在20-70MPa之间，随后被加强至180MPa。

    HEATING A FURNACE FOR THE GROWTH OF SEMICONDUCTOR MATERIAL
    4.
    发明申请
    HEATING A FURNACE FOR THE GROWTH OF SEMICONDUCTOR MATERIAL 审中-公开
    加热半导体材料的生长

    公开(公告)号：WO2013014067A1

    公开(公告)日：2013-01-31

    申请号：PCT/EP2012/064241

    申请日：2012-07-19

    Applicant: REC Wafer Norway AS ,  BAKKE, Per ,  VLADIMIROV, Egor ,  HOMAYONIFAR, Pouria ,  TEIXEIRA, Alexandre

    Inventor： BAKKE, Per ,  VLADIMIROV, Egor ,  HOMAYONIFAR, Pouria ,  TEIXEIRA, Alexandre

    IPC: C30B11/00 ,  C30B29/06 ,  C30B28/06

    CPC classification number: H01L21/67098 ,  C30B11/002 ,  C30B11/003 ,  H01L21/324 ,  H01L21/67155

    Abstract: A multi-ingot furnace for the growth of crystalline semiconductor material has one or more heating devices for heating a hot zone in which crucibles containing semiconductor material are received. At least one of the heating devices is arranged to apply a predetermined differential heat flux profile across a horizontal cross-section of the semiconductor material in one or more of the crucibles, the predetermined differential heat flux profile being selected in dependence the position of the one or more crucibles in an array. In this manner, the heating device can at least partially compensate for differences in the temperature across the semiconductor material that arises from its geometric position in the furnace. This reduces the possibility of defects such as dislocations during the growth of a crystalline semiconductor material. Associated methods are also disclosed.

    Abstract translation: 用于生长晶体半导体材料的多晶锭炉具有用于加热其中容纳有半导体材料的坩埚的热区域的一个或多个加热装置。 至少一个加热装置被布置成在一个或多个坩埚中跨越半导体材料的水平横截面施加预定的差分热通量分布，根据该一个的位置来选择预定的差分热通量分布 或更多的坩埚。 以这种方式，加热装置可以至少部分地补偿由其在炉中的几何位置产生的跨越半导体材料的温度差。 这降低了晶体半导体材料生长期间的诸如位错之类的缺陷的可能性。 还公开了相关方法。

    PROCESS AND EQUIPMENT FOR REACTING SILICON TETRACHLORIDE WITH ZINC TO PRODUCE PURE SILICON AND ZINC CHLORIDE
    5.
    发明申请
    PROCESS AND EQUIPMENT FOR REACTING SILICON TETRACHLORIDE WITH ZINC TO PRODUCE PURE SILICON AND ZINC CHLORIDE 审中-公开
    用ZINC反应硅酮四氯化磷生产纯硅和氯化锌的工艺和设备

    公开(公告)号：WO2008127120A1

    公开(公告)日：2008-10-23

    申请号：PCT/NO2008/000127

    申请日：2008-04-04

    Applicant: NORSK HYDRO ASA ,  BAKKE, Per ,  KRISTIANSEN, Kåre

    Inventor： BAKKE, Per ,  KRISTIANSEN, Kåre

    IPC: C01B33/033 ,  C22B9/05 ,  B01J10/00

    CPC classification number: C22B61/00 ,  B01J4/002 ,  B01J2219/182 ,  B01J2219/1923 ,  C01B33/033 ,  C01G9/04 ,  C22B5/04 ,  C22B34/1272

    Abstract: A process and equipment for reacting silicon tetrachloride with liquid zinc to produce silicon and zinc chloride the reaction taking place in a reactor (1 ). Silicon tetrachloride gas is injected continuously through one or more nozzles (7) into a flow of molten zinc (5) in a reaction zone (2) of the reactor where the temperature is above the melting temperature of zinc (>419°C) and below the boiling temperature of zinc chloride at 1 atmosphere pressure (732°C). The reaction products, silicon and zinc chloride are collected in a separation zone (3) from which they may be removed. Silicon with high purity is effectively and cheaply produced by the present inventive process and equipment.

    Abstract translation: 一种用于使四氯化硅与液态锌反应以生产硅和氯化锌的方法和设备，反应在反应器（1）中进行。 将四氯化碳气体通过一个或多个喷嘴（7）连续注入到反应区（2）中的熔融锌（5）流中，其中温度高于锌的熔融温度（> 419℃），并且 低于氯化锌在1个大气压（732℃）的沸点温度。 反应产物，硅和氯化锌被收集在分离区（3）中，从中可以除去它们。 通过本发明的方法和设备有效且廉价地生产具有高纯度的硅。

    MAGNESIUM ALLOY HAVING IMPROVED ELEVATED TEMPERATURE PERFORMANCE
    8.
    发明申请
    MAGNESIUM ALLOY HAVING IMPROVED ELEVATED TEMPERATURE PERFORMANCE 审中-公开
    具有改善的高温性能的镁合金

    公开(公告)号：WO2005108634A1

    公开(公告)日：2005-11-17

    申请号：PCT/EP2005/004990

    申请日：2005-05-09

    Applicant: NORSK HYDRO TECHNOLOGY B.V. ,  BAKKE, Per ,  WESTENGEN, Hakon

    Inventor： BAKKE, Per ,  WESTENGEN, Hakon

    IPC: C22C23/02

    CPC classification number: C22C23/06 ,  C22C23/02

    Abstract: A magnesium alloy consisting of 1,00 - 10,00 % by weight of aluminium, 1,00 - 8,00 % by weight of rare earth metals (RE-metals), at least 40 % by weight of the RE-metals being cerium, less than 0,5 % by weight of manganese, less than 1,00 % by weight of zinc, 0,00 - 3,00 % by weight of calcium, 0,00 - 3,00 % by weight of strontium and the balance being magnesium and unavoidable impurities, the total impurity level being below 0,1 % by weight.

    Abstract translation: 由1,00-10.00重量％的铝，1,00-8.00重量％的稀土金属（RE-金属）组成的镁合金，至少40重量％的RE-金属为 铈，小于0.5重量％的锰，小于1,00重量％的锌，0.00-3.00重量％的钙，0.00-3.00重量％的锶和 余量为镁和不可避免的杂质，总杂质含量低于0.1重量％。

    A PROCESS FOR THE RECYCLING OF HIGH PURITY SILICON METAL
    9.
    发明申请
    A PROCESS FOR THE RECYCLING OF HIGH PURITY SILICON METAL 审中-公开
    高纯硅金属回收工艺

    公开(公告)号：WO2008133525A1

    公开(公告)日：2008-11-06

    申请号：PCT/NO2008/000141

    申请日：2008-04-18

    Applicant: NORSK HYDRO ASA ,  BAKKE, Per ,  GIBALA, Robert ,  SVALESTUEN, Jorild, Margrete ,  Ol, Grete, Viddal

    Inventor： BAKKE, Per ,  GIBALA, Robert ,  SVALESTUEN, Jorild, Margrete ,  Ol, Grete, Viddal

    IPC: C01B33/107 ,  C07F7/02 ,  H01L31/18

    CPC classification number: H01L31/1804 ,  C01B33/10726 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A process for the re-use of remainders or other residual Si of high purity silicon such as saw dust or kerf from manufacturing of solar cells wafers or semi-contductor devices, is characterized in that the dry kerf, chips and/or other residual Si from wafer production processes or semi-conductor devices is used as feedstock together with metallurgical grade silicon in a direct chlorination reactor (1) producing silicon tetrachloride, SiCI4. Un- reacted kerf or other small particles that escape the reaction zone unreacted are repeatedly returned to the reactor for further chlorination regardless of their size. The equipment included in the process may, beyond the reactor (1), comprise a storage and mixing device (2) for the mixing and storage of the Si material/kerf, a recovery device (3) for separation and recovery of Si containing particles escaping the reaction zone of the reactor and being returned to the reaction zone of the reactor by a return feeding means (9), a condensation unit (10) in which the smallest sized particles escaping the reaction zone of the reactor and recovery device are collected in a slurry with the liquid SiCI4, and a mixing unit (13) into which additional kerf, chips and other residual Si from wafer production processes or semi-conductor devices is added and mixed with the existing SiCI 4 /Si slurry that is subsequently added directly to the reaction zone of the reactor for cooling and temperature control.

    Abstract translation: 用于重新利用来自制造太阳能电池晶片或半导体装置的高纯度硅（例如锯屑或切口）的残余物或其它残余Si的方法的特征在于干燥切屑，碎屑和/或其它残留Si 来自晶圆生产工艺或半导体器件的原料与冶金级硅一起用于产生四氯化硅SiCl 4的直接氯化反应器（1）中。 未反应的切口或逃离未反应的反应区的其他小颗粒反复返回反应器进行进一步氯化，而不管其尺寸如何。 包括在该方法中的设备可以在反应器（1）之外包括用于混合和储存Si材料/切口的储存和混合装置（2），用于分离和回收含Si颗粒的回收装置（3） 逃离反应器的反应区并通过返回进料装置（9）返回到反应器的反应区，其中收集排出反应器和回收装置的反应区的最小尺寸的颗粒的冷凝单元（10） 在具有液体SiCl 4的浆料中，以及混合单元（13），其中加入来自晶片生产工艺或半导体器件的附加切口，芯片和其它残留Si，并与现有的SiCl 4 / Si浆料，随后直接加入反应器的反应区进行冷却和温度控制。

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