公开(公告)号：WO0213958A3

公开(公告)日：2002-08-15

申请号：PCT/US0124707

申请日：2001-08-08

Applicant: GEN ELECTRIC ,  ANTHONY THOMAS R ,  BANHOLZER WILLIAM F ,  CASEY JOHN K ,  KADIOGLU YAVUZ ,  SMITH ALAN C ,  JACKSON WILLIAM E ,  VAGARALI SURESH S ,  WEBB STEVEN W

Inventor： ANTHONY THOMAS R ,  BANHOLZER WILLIAM F ,  CASEY JOHN K ,  KADIOGLU YAVUZ ,  SMITH ALAN C ,  JACKSON WILLIAM E ,  VAGARALI SURESH S ,  WEBB STEVEN W

IPC: B01J3/06 ,  B24B1/00 ,  B24B19/16 ,  B30B11/00 ,  C01B31/06

CPC classification number: B01J3/062 ,  B01J3/067 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0695 ,  B24B19/16 ,  B30B11/004 ,  B30B11/007

Abstract: The present invention is directed to a method for treating discolored natural diamond, especially Type IIa diamond and Type IaA/B diamond with nitrogen as predominantly B centers, for improving its color. The method includes preblocking and preshaping a discolored natural diamond to prevent its breakage in a high pressure/high temperature (HP/HT) press, placing said discolored natural diamond in a pressure transmitting medium which is consolidated into a pill. Next, the pill is placed into a HP/HT press at elevated pressure and elevated temperature within the graphite-stable or diamond-stable range of the carbon phase diagram for a time sufficient to improve the color of said diamond. Finally, the diamond is recovered from said press. Colorless and fancy colored diamonds can be made by this method.

Abstract translation: 本发明涉及一种处理变色的天然金刚石，尤其是IIa型金刚石和IaA / B型金刚石的方法，其中氮主要为B中心，以改善其颜色。 该方法包括对变色的天然金刚石进行预先阻隔和预成型，以防止其在高压/高温（HP / HT）压机中破裂，将所述变色的天然金刚石放置在压实的介质中，该压力传递介质被固结成药丸。 接下来，将丸剂在石墨稳定或金刚石稳定的碳相图范围内升高的压力和升高的温度下放入HP / HT压机中足够长的时间以改善所述金刚石的颜色。 最后，钻石从所述印刷机中回收。 这种方法可以制作无色和花式彩色钻石。

公开(公告)号：WO2010111228A3

公开(公告)日：2011-01-06

申请号：PCT/US2010028245

申请日：2010-03-23

Applicant: DOW GLOBAL TECHNOLOGIES INC ,  DEGROOT MARTY W ,  FEIST REBEKAH K ,  BERNIUS MARK T ,  BANHOLZER WILLIAM F ,  YEUNG CHUNG-HEI ,  SREERAM ATTIGANAL N ,  HALEY ROBERT P JR

Inventor： DEGROOT MARTY W ,  FEIST REBEKAH K ,  BERNIUS MARK T ,  BANHOLZER WILLIAM F ,  YEUNG CHUNG-HEI ,  SREERAM ATTIGANAL N ,  HALEY ROBERT P JR

IPC: H01L31/0216 ,  H01L31/032

CPC classification number: H01L31/02167 ,  H01L31/0445 ,  H01L31/048 ,  H01L31/0749 ,  Y02E10/541

Abstract: Chalcogenide based photovoltaic devices cells with good resistance to environmental elements can be formed by direct low temperature deposition of inorganic barrier layers onto the film. A unique multilayer barrier can be formed in a single step when reactive sputtering of the silicon nitride onto an inorganic oxide top layer of the PV device.

Abstract translation: 可以通过在膜上直接低温沉积无机阻挡层来形成具有良好耐环境元素的硫族化物基光伏器件电池。 当将氮化硅反应溅射到PV器件的无机氧化物顶层上时，可以在单个步骤中形成独特的多层阻挡层。

公开(公告)号：WO2010111228A2

公开(公告)日：2010-09-30

申请号：PCT/US2010/028245

申请日：2010-03-23

Applicant: DOW GLOBAL TECHNOLOGIES INC. ,  DEGROOT, Marty, W. ,  FEIST, Rebekah, K. ,  BERNIUS, Mark, T. ,  BANHOLZER, William, F. ,  YEUNG, Chung-Hei ,  SREERAM, Attiganal, N. ,  HALEY, Robert, P., Jr.

Inventor： DEGROOT, Marty, W. ,  FEIST, Rebekah, K. ,  BERNIUS, Mark, T. ,  BANHOLZER, William, F. ,  YEUNG, Chung-Hei ,  SREERAM, Attiganal, N. ,  HALEY, Robert, P., Jr.

IPC: H01L31/0216

CPC classification number: H01L31/02167 ,  H01L31/0445 ,  H01L31/048 ,  H01L31/0749 ,  Y02E10/541

Abstract: Chalcogenide based photovoltaic devices cells with good resistance to environmental elements can be formed by direct low temperature deposition of inorganic barrier layers onto the film. A unique multilayer barrier can be formed in a single step when reactive sputtering of the silicon nitride onto an inorganic oxide top layer of the PV device.

Abstract translation: 可以通过在膜上直接低温沉积无机阻挡层来形成具有良好耐环境元素的硫族化物基光伏器件电池。 当将氮化硅反应溅射到PV器件的无机氧化物顶层上时，可以在单个步骤中形成独特的多层阻挡层。