公开(公告)号：WO2012121852A1

公开(公告)日：2012-09-13

申请号：PCT/US2012/025411

申请日：2012-02-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORP. ,  BROWN, Stephen L. ,  BRULEY, John ,  CABRAL JR., Cyril ,  CALLEGARI, Sandro ,  FRANK, Martin M. ,  GUILLORN, Michael A. ,  HOPSTAKEN, Marinus ,  NARAYANAN, Vijay ,  KWONG HON WONG, Keith

Inventor： BROWN, Stephen L. ,  BRULEY, John ,  CABRAL JR., Cyril ,  CALLEGARI, Sandro ,  FRANK, Martin M. ,  GUILLORN, Michael A. ,  HOPSTAKEN, Marinus ,  NARAYANAN, Vijay ,  KWONG HON WONG, Keith

IPC: H01L21/70 ,  C23C14/06 ,  H01L21/28

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L23/53266 ,  H01L29/517 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A layered structure and semiconductor device and methods for fabricating a layered structure and semiconductor device. The layered structure includes: a base layer including a material containing titanium nitride, tantalum nitride, or a combination thereof; a conductive layer including a material containing: tantalum aluminum nitride, titanium aluminum nitride, tantalum silicon nitride, titanium silicon nitride, tantalum hafnium nitride, titanium hafnium nitride, hafnium nitride, hafnium carbide, tantalum carbide, vanadium nitride, niobium nitride, or any combination thereof; and a tungsten layer. The semiconductor device includes: a semiconductor substrate; a base layer; a conductive layer; and a tungsten layer.

Abstract translation: 层状结构和半导体器件以及用于制造层状结构和半导体器件的方法。 层状结构包括：包含含有氮化钛，氮化钽或其组合的材料的基底层; 包括含有氮化铝钽，氮化铝钛，氮化硅，氮化钛，氮化钽，氮化钛，氮化铪，碳化铪，碳化钽，氮化钒，氮化铌或其组合的材料的导电层 物; 和钨层。 半导体器件包括：半导体衬底; 基层; 导电层; 和钨层。