公开(公告)号：WO2005021842A3

公开(公告)日：2005-09-15

申请号：PCT/US2004028110

申请日：2004-08-27

Applicant: CAPE SIMULATIONS INC ,  MOTAKEF SHARIAR ,  WORLIKAR ANIRUDDHA S

Inventor： MOTAKEF SHARIAR ,  WORLIKAR ANIRUDDHA S

IPC: C23C16/30 ,  C23C16/32 ,  C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  C30B25/14 ,  H01L21/00

CPC classification number: C23C16/455 ,  C23C16/303 ,  C23C16/325 ,  C23C16/4405 ,  Y10T117/10

Abstract: A method of growing a crystal on a substrate disposed in a reactor, that provides a reactor chamber in which the substrate is disposed, includes flowing reactive gases inside the reactor chamber toward the substrate, the reactive gases comprising components that are able to bond to each other to form the crystal, and flowing buffer gas in the reactor chamber between the reactive gases and a wall of the reactor, where the flowing buffer gas inhibits at least one of a first material at least one of in and produced by the reactive gases from reaching the reactor wall and a second material produced by the reactor wall from reaching the reactive gases in the reactor chamber before the reactive gases reach the substrate.

Abstract translation: 一种在设置在反应器中的衬底上生长晶体的方法，所述反应器提供其中设置衬底的反应室，所述方法包括使反应室内的反应气体朝向衬底流动，所述反应气体包含能够键合至 以形成晶体，以及在反应室中在反应室和反应器壁之间流动缓冲气体，其中流动缓冲气体抑制反应气体中至少一种第一材料和由反应气体产生的第一材料中的至少一种 到达反应器壁并且由反应器壁产生的第二材料在反应气体到达基底之前不会到达反应器腔室中的反应气体。

公开(公告)号：WO2005021842A2

公开(公告)日：2005-03-10

申请号：PCT/US2004/028110

申请日：2004-08-27

Applicant: CAPE SIMULATIONS, INC. ,  MOTAKEF, Shariar ,  WORLIKAR, Aniruddha, S.

Inventor： MOTAKEF, Shariar ,  WORLIKAR, Aniruddha, S.

IPC: C30B

CPC classification number: C23C16/455 ,  C23C16/303 ,  C23C16/325 ,  C23C16/4405 ,  Y10T117/10

Abstract: A method of growing a crystal on a substrate disposed in a reactor, that provides a reactor chamber in which the substrate is disposed, includes flowing reactive gases inside the reactor chamber toward the substrate, the reactive gases comprising components that are able to bond to each other to form the crystal, and flowing buffer gas in the reactor chamber between the reactive gases and a wall of the reactor, where the flowing buffer gas inhibits at least one of a first material at least one of in and produced by the reactive gases from reaching the reactor wall and a second material produced by the reactor wall from reaching the reactive gases in the reactor chamber before the reactive gases reach the substrate.

Abstract translation: 在设置在反应器中的衬底上生长晶体的方法，其提供其中设置衬底的反应器室，包括在反应器室内朝向衬底流动反应性气体，反应性气体包括能够结合到每个 另一个以形成晶体，以及在反应器室中在反应气体和反应器的壁之间流动的缓冲气体，其中流动的缓冲气体抑制由反应气体中的至少一种和由反应性气体产生的至少一种 到达反应器壁和由反应器壁产生的第二材料在反应气体到达基板之前到达反应器室中的反应性气体。

公开(公告)号：WO2018112143A1

公开(公告)日：2018-06-21

申请号：PCT/US2017/066303

申请日：2017-12-14

Applicant: CAPE SIMULATIONS

Inventor： LAM, Stephanie ,  FIALA, John ,  MOTAKEF, Shariar

IPC: G01N23/06 ,  G01N23/09 ,  G01T1/167 ,  G01T1/20 ,  G01T3/06 ,  G01T1/16 ,  G01T1/06

Abstract: A composite scintillator includes a matrix material and pieces of at least one scintillator material embedded in the matrix material. The scintillator material is (a) inorganic single-crystalline or ceramic, (b) organic plastic, or (c) glassy; and the embedded scintillator material scintillates in response to at least one of gamma-ray and neutron irradiation.