公开(公告)号：WO2011008531A3

公开(公告)日：2011-03-31

申请号：PCT/US2010040357

申请日：2010-06-29

Applicant: UNIV FLORIDA ,  CHANG CHIH-YANG ,  REN FAN ,  PEARTON STEPHEN JOHN

Inventor： CHANG CHIH-YANG ,  REN FAN ,  PEARTON STEPHEN JOHN

IPC: H01L29/778 ,  H01L21/331

CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/517

Abstract: An enhancement mode (E-mode) HEMT is provided that can be used for analog and digital applications, In a specific embodiment, the HEMT can be an AlN/GaN HEMT. The subject E-mode device can be applied to high power, high voltage, high temperature applications, including but not limited to telecommunications, switches, hybrid electric vehicles, power flow control and remote sensing. According to an embodiment of the present invention, E-mode devices can be fabricated by performing an oxygen plasma treatment with respect to the gate area of the HEMT. The oxygen plasma treatment can be, for example, an O2 plasma treatment. In addition, the threshold voltage of the E-mode HEMT can be controlled by adjusting the oxygen plasma exposure time. By using a masking layer protecting regions for depletion mode (D-mode) devices, D-mode and E-mode devices can be fabricated on a same chip.

Abstract translation: 提供可用于模拟和数字应用的增强模式（E模式）HEMT。在具体实施例中，HEMT可以是AlN / GaN HEMT。 主题E模式设备可以应用于高功率，高电压，高温应用，包括但不限于电信，交换机，混合动力电动车辆，电力流量控制和遥感。 根据本发明的实施例，可以通过对HEMT的栅极区进行氧等离子体处理来制造E模式器件。 氧等离子体处理可以是例如O 2等离子体处理。 此外，E模式HEMT的阈值电压可以通过调节氧等离子体暴露时间来控制。 通过使用用于耗尽模式（D模式）器件的掩蔽层保护区域，可以在同一芯片上制造D模式和E模式器件。

公开(公告)号：WO2011008531A2

公开(公告)日：2011-01-20

申请号：PCT/US2010/040357

申请日：2010-06-29

Applicant: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. ,  CHANG, Chih-Yang ,  REN, Fan ,  PEARTON, Stephen, John

Inventor： CHANG, Chih-Yang ,  REN, Fan ,  PEARTON, Stephen, John

IPC: H01L29/778 ,  H01L21/331

CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/517

Abstract: An enhancement mode (E-mode) HEMT is provided that can be used for analog and digital applications, In a specific embodiment, the HEMT can be an AlN/GaN HEMT. The subject E-mode device can be applied to high power, high voltage, high temperature applications, including but not limited to telecommunications, switches, hybrid electric vehicles, power flow control and remote sensing. According to an embodiment of the present invention, E-mode devices can be fabricated by performing an oxygen plasma treatment with respect to the gate area of the HEMT. The oxygen plasma treatment can be, for example, an O2 plasma treatment. In addition, the threshold voltage of the E-mode HEMT can be controlled by adjusting the oxygen plasma exposure time. By using a masking layer protecting regions for depletion mode (D-mode) devices, D-mode and E-mode devices can be fabricated on a same chip.

Abstract translation: 提供了可用于模拟和数字应用的增强模式（E模式）HEMT。在具体实施例中，HEMT可以是AlN / GaN HEMT。 本主题的E-模式设备可应用于高功率，高电压，高温应用，包括但不限于电信，交换机，混合动力电动车辆，电力潮流控制和遥感。 根据本发明的实施例，可以通过对HEMT的栅极区域执行氧等离子体处理来制造E-模式器件。 氧等离子体处理可以是例如O 2等离子体处理。 另外，可以通过调整氧等离子体暴露时间来控制E模式HEMT的阈值电压。 通过使用用于耗尽模式（D模式）器件的屏蔽层保护区域，可以在同一芯片上制造D模式和E模式器件。