公开(公告)号：WO2012166385A1

公开(公告)日：2012-12-06

申请号：PCT/US2012/038497

申请日：2012-05-18

Applicant: RAYTHEON COMPANY ,  CHELAKARA, Ram, V. ,  KAZIOR, Thomas, E. ,  LAROCHE, Jeffrey, R.

Inventor： CHELAKARA, Ram, V. ,  KAZIOR, Thomas, E. ,  LAROCHE, Jeffrey, R.

IPC: H01L29/45 ,  H01L29/20 ,  H01L29/778

CPC classification number: H01L29/452 ,  H01L29/2003 ,  H01L29/7787

Abstract: A semiconductor structure is provided having: a semiconductor; a gold-free electrically conductive structure in ohmic contact with the semiconductor; and a pair of electrically conductive layers separated by a layer of silicon. The structure includes: a refractory metal layer disposed in contact with the semiconductor; and wherein one of the pair of electrically conductive layers separated by the layer of silicon is the refractory metal layer. A second layer of silicon is disposed on a second one of the pair of pair of electrically conductive layers and including a third electrically conducive layer on the second layer of silicon. In one embodiment, the semiconductor includes a III-V material.

Abstract translation: 提供一种半导体结构，其具有：半导体; 与半导体欧姆接触的无金导电结构; 以及一层由硅层隔开的导电层。 该结构包括：与半导体接触设置的难熔金属层; 并且其中由所述硅层分离的所述一对导电层中的一个是难熔金属层。 第二层硅层被设置在一对导电层中的第二层上，并且在第二层硅上包括第三导电层。 在一个实施例中，半导体包括III-V材料。