公开(公告)号：WO2022267007A1

公开(公告)日：2022-12-29

申请号：PCT/CN2021/102384

申请日：2021-06-25

Applicant: INTEL CORPORATION ,  HUANG, Guangyu ,  BASU, Dipanjan ,  KUO, Meng-Wei ,  KOVAL, Randy ,  MEBRAHTU, Henok ,  WANG, Minsheng ,  LI, Jie ,  WANG, Fei ,  GAO, Qun ,  ZHANG, Xingui ,  LI, Guanjie

Inventor： HUANG, Guangyu ,  BASU, Dipanjan ,  KUO, Meng-Wei ,  KOVAL, Randy ,  MEBRAHTU, Henok ,  WANG, Minsheng ,  LI, Jie ,  WANG, Fei ,  GAO, Qun ,  ZHANG, Xingui ,  LI, Guanjie

IPC: H01L21/28 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/40117 ,  H01L29/4234 ,  H01L29/66833 ,  H01L29/7923

Abstract: Systems, apparatuses and methods may provide for memory cell technology comprising a control gate, a conductive channel, and a charge storage structure coupled to the control gate and the conductive channel, wherein the charge storage structure includes a polysilicon layer and a metal layer. In one example, the metal layer includes titanium nitride or other high effective work function metal.