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公开(公告)号:WO2006036444A2
公开(公告)日:2006-04-06
申请号:PCT/US2005031086
申请日:2005-08-26
Applicant: UNIV MICHIGAN STATE , KANATZIDIS MERCOURI G , HSU KUEI-FANG
Inventor: KANATZIDIS MERCOURI G , HSU KUEI-FANG
CPC classification number: H01L35/16
Abstract: A thermoelectric composition comprises a material represented by the general formula (Ag
Abstract translation: 热电组合物包含由通式(Ag
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公开(公告)号:WO2005036660A2
公开(公告)日:2005-04-21
申请号:PCT/US2004/027536
申请日:2004-08-25
Applicant: BOARD OF TRUSTEES OPERATING MICHIGAN STATE UNIVERSITY , KANATZIDIS, Mercouri , HSU, Kuei-Fang
Inventor: KANATZIDIS, Mercouri , HSU, Kuei-Fang
IPC: H01L35/20
Abstract: A thermoelectric material of the general formula Ag 1-X M m M'Q 2+m , wherein M is selected from the group consisting of Pb, Sn, Ca, Sr, Ba, divalent transition metals, and combinations thereof; M' is selected from the group consisting of Bi, Sb, and combinations thereof; Q is selected from the group consisting of Se, Te, S, and combinations thereof; 8 ≤ m ≤ 24; and 0.01 ≤ x ≤ 0.7. In embodiments of the invention, the compositions exhibit n-type semiconductor properties. In preferred embodiments, x is from 0.1 to 0.3, and m is from 10 to 18. The compositions may be synthesized by adding stoichiometric amounts of starting materials comprising Ag, M, M', and Q to a reaction vessel, heating the starting materials to a temperature and for a period of time sufficient to melt the materials, and cooling the reaction product at a controlled rate of cooling.
Abstract translation: 通式为Ag 1 -X M M M Q 2 + m的热电材料,其中 M选自Pb,Sn,Ca,Sr,Ba,二价过渡金属及其组合; M'选自Bi,Sb及其组合; Q选自Se,Te,S及其组合; 8≤m≤24; 和0.01≤x≤0.7。 在本发明的实施例中,组合物表现出n型半导体性质。 在优选的实施方案中,x为0.1至0.3,m为10至18.可以通过将化学计量量的包含Ag,M,M'和Q的原料加入到反应容器中,加热原料 加热至足以熔化材料的温度并保持一段时间,并以控制的冷却速率冷却反应产物。 p>
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公开(公告)号:WO2006036444A3
公开(公告)日:2006-04-06
申请号:PCT/US2005/031086
申请日:2005-08-26
Applicant: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY , KANATZIDIS, Mercouri, G. , HSU, Kuei-Fang
Inventor: KANATZIDIS, Mercouri, G. , HSU, Kuei-Fang
IPC: H01L35/16
Abstract: A thermoelectric composition comprises a material represented by the general formula (Ag a X 1-a ) 1±x (Sn b Pb l - b ) m M’ 1-y Q 2+m wherein X is Na, K, or a combination of Na and K in any proportion; M' is a trivalent element selected from the group consisting of Sb, Bi, lanthanide elements, and combinations thereof; Q is a chalcogenide element selected from the group consisting of S, Te, Se, and combinations thereof; a and b are independently > 0 and ≤1; x and y are independently > 0 and
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公开(公告)号:WO2005036660A3
公开(公告)日:2005-08-18
申请号:PCT/US2004027536
申请日:2004-08-25
Applicant: UNIV MICHIGAN STATE , KANATZIDIS MERCOURI , HSU KUEI-FANG
Inventor: KANATZIDIS MERCOURI , HSU KUEI-FANG
Abstract: A thermoelectric material of the general formula Ag 1-X M m M'Q 2+m , wherein M is selected from the group consisting of Pb, Sn, Ca, Sr, Ba, divalent transition metals, and combinations thereof; M' is selected from the group consisting of Bi, Sb, and combinations thereof; Q is selected from the group consisting of Se, Te, S, and combinations thereof; 8
Abstract translation: 通式为Ag 1-X M m M'Q 2 + m的热电材料,其中M选自Pb,Sn,Ca,Sr,Ba,二价过渡金属及其组合; M'选自Bi,Sb及其组合; Q选自Se,Te,S及其组合; 8 <= m <= 24; 和0.01 <= x <= 0.7。 在本发明的实施方案中,组合物显示n型半导体性质。 在优选的实施方案中,x为0.1至0.3,m为10至18.可通过向反应容器中加入化学计量量的包含Ag,M,M'和Q的起始材料来合成组合物,加热原料 达到足以熔化材料的温度和一段时间,并以受控的冷却速度冷却反应产物。
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