公开(公告)号：WO2010059790A2

公开(公告)日：2010-05-27

申请号：PCT/US2009/065088

申请日：2009-11-19

Applicant: APPLIED MATERIALS, INC. ,  KAO, Chien-Teh ,  LU, Xinliang ,  GE, Zhenbin ,  CHANG, Mei ,  HUNG, Hoiman, Raymond ,  INGLE, Nitin

Inventor： KAO, Chien-Teh ,  LU, Xinliang ,  GE, Zhenbin ,  CHANG, Mei ,  HUNG, Hoiman, Raymond ,  INGLE, Nitin

IPC: H01L21/76 ,  H01L21/306

CPC classification number: H01L21/76232 ,  H01L21/67219 ,  H01L27/11521

Abstract: Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to apparatus and methods for forming shallow trench isolations having recesses with rounded bottoms. One embodiment of the present invention comprises forming a recess in a filled trench structure by removing a portion of a material from the filled trench structure and rounding bottom corners of the recess. Rounding bottom corners is performed by depositing a conformal layer of the same material filled in the trench structure over the substrate and removing the conformal layer of the material from sidewalls of the recess.

Abstract translation: 本发明的实施例一般涉及用于处理半导体衬底的装置和方法。 特别地，本发明的实施例涉及用于形成具有具有圆形底部的凹部的浅沟槽隔离的装置和方法。 本发明的一个实施例包括通过从填充的沟槽结构中去除一部分材料并且使凹部的圆角底部倒圆，在填充的沟槽结构中形成凹陷。 通过将填充在沟槽结构中的相同材料的共形层沉积在衬底上并且从凹部的侧壁去除材料的共形层来进行圆角底角。

公开(公告)号：WO2010059790A3

公开(公告)日：2010-08-05

申请号：PCT/US2009065088

申请日：2009-11-19

Applicant: APPLIED MATERIALS INC ,  KAO CHIEN-TEH ,  LU XINLIANG ,  GE ZHENBIN ,  CHANG MEI ,  HUNG HOIMAN RAYMOND ,  INGLE NITIN

Inventor： KAO CHIEN-TEH ,  LU XINLIANG ,  GE ZHENBIN ,  CHANG MEI ,  HUNG HOIMAN RAYMOND ,  INGLE NITIN

IPC: H01L21/76 ,  H01L21/306

CPC classification number: H01L21/76232 ,  H01L21/67219 ,  H01L27/11521

Abstract: Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to apparatus and methods for forming shallow trench isolations having recesses with rounded bottoms. One embodiment of the present invention comprises forming a recess in a filled trench structure by removing a portion of a material from the filled trench structure and rounding bottom corners of the recess. Rounding bottom corners is performed by depositing a conformal layer of the same material filled in the trench structure over the substrate and removing the conformal layer of the material from sidewalls of the recess.

Abstract translation: 本发明的实施例总体上涉及用于处理半导体衬底的设备和方法。 特别地，本发明的实施例涉及用于形成具有圆底的凹陷的浅沟槽隔离的装置和方法。 本发明的一个实施例包括通过从填充的沟槽结构去除一部分材料并且使凹陷的底部角落倒圆来在填充的沟槽结构中形成凹槽。 通过在衬底上方沉积填充在沟槽结构中的相同材料的共形层并从凹槽的侧壁去除材料的共形层来执行圆角底部拐角。