公开(公告)号：WO2010115128A3

公开(公告)日：2011-01-13

申请号：PCT/US2010029815

申请日：2010-04-02

Applicant: APPLIED MATERIALS INC ,  ALLEN ADOLPH MILLER ,  HAWRYLCHAK LARA ,  XIE ZHIGANG ,  RASHEED MUHAMMAND M ,  WANG RONGJUN ,  TANG XIANMIN ,  LIU ZHENDONG ,  GUNG TZA-JING ,  GANDIKOTA SRINIVAS ,  CHANG MEI ,  COX MICHAEL S ,  YOUNG DONNY ,  SAVANDAIAH KIRANKUMAR ,  GE ZHENBIN

Inventor： ALLEN ADOLPH MILLER ,  HAWRYLCHAK LARA ,  XIE ZHIGANG ,  RASHEED MUHAMMAND M ,  WANG RONGJUN ,  TANG XIANMIN ,  LIU ZHENDONG ,  GUNG TZA-JING ,  GANDIKOTA SRINIVAS ,  CHANG MEI ,  COX MICHAEL S ,  YOUNG DONNY ,  SAVANDAIAH KIRANKUMAR ,  GE ZHENBIN

IPC: H01L21/203 ,  C23C14/34

CPC classification number: C23C14/564 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/548 ,  H01J37/32642 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3441 ,  H01J37/3455

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

Abstract translation: 本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。 处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。 该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置 的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

公开(公告)号：WO2010115128A9

公开(公告)日：2010-10-07

申请号：PCT/US2010/029815

申请日：2010-04-02

Applicant: APPLIED MATERIALS, INC. ,  ALLEN, Adolph Miller ,  HAWRYLCHAK, Lara ,  XIE, Zhigang ,  RASHEED, Muhammand M. ,  WANG, Rongjun ,  TANG, Xianmin ,  LIU, Zhendong ,  GUNG, Tza-Jing ,  GANDIKOTA, Srinivas ,  CHANG, Mei ,  COX, Michael S. ,  YOUNG, Donny ,  SAVANDAIAH, Kirankumar ,  GE, Zhenbin

Inventor： ALLEN, Adolph Miller ,  HAWRYLCHAK, Lara ,  XIE, Zhigang ,  RASHEED, Muhammand M. ,  WANG, Rongjun ,  TANG, Xianmin ,  LIU, Zhendong ,  GUNG, Tza-Jing ,  GANDIKOTA, Srinivas ,  CHANG, Mei ,  COX, Michael S. ,  YOUNG, Donny ,  SAVANDAIAH, Kirankumar ,  GE, Zhenbin

IPC: H01L21/203 ,  C23C14/34

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

公开(公告)号：WO2010059868A2

公开(公告)日：2010-05-27

申请号：PCT/US2009065208

申请日：2009-11-19

Applicant: APPLIED MATERIALS INC ,  CHANG MEI ,  KAO CHIEN-TEH ,  LU XIN LIANG ,  GE ZHENBIN

Inventor： CHANG MEI ,  KAO CHIEN-TEH ,  LU XIN LIANG ,  GE ZHENBIN

IPC: H01L21/28 ,  H01L21/336

CPC classification number: H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76877 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683 ,  H01L2221/1063

Abstract: Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to methods and apparatus for trench and via profile modification prior to filling the trench and via. One embodiment of the present invention comprises forming a sacrifice layer to pinch off a top opening of a trench structure by exposing the trench structure to an etchant. In one embodiment, the etchant is configured to remove the first material by reacting with the first material and generating a by-product, which forms the sacrifice layer.

Abstract translation: 本发明的实施例总体上涉及用于处理半导体衬底的设备和方法。 特别地，本发明的实施例涉及在填充沟槽和通孔之前用于沟槽和通孔轮廓修改的方法和设备。 本发明的一个实施例包括通过将沟槽结构暴露于蚀刻剂来形成牺牲层以夹断沟槽结构的顶部开口。 在一个实施例中，蚀刻剂被配置成通过与第一材料反应并产生形成牺牲层的副产物来去除第一材料。

公开(公告)号：WO2010042552A3

公开(公告)日：2010-04-15

申请号：PCT/US2009/059743

申请日：2009-10-06

Applicant: APPLIED MATERIALS, INC. ,  LU, Xinliang ,  YANG, Haichun ,  GE, Zhenbin ,  LU, Nan ,  OR, David T. ,  KAO, Chien-Teh ,  CHANG, Mei

Inventor： LU, Xinliang ,  YANG, Haichun ,  GE, Zhenbin ,  LU, Nan ,  OR, David T. ,  KAO, Chien-Teh ,  CHANG, Mei

IPC: H01L21/3065

Abstract: Methods for etching dielectric layers comprising silicon and nitrogen are provided herein. In some embodiments, such methods may include providing a substrate having a dielectric layer comprising silicon and nitrogen disposed thereon, forming reactive species from a process gas comprising hydrogen (H2) and nitrogen trifluoride (NF3) using a remote plasma; and etching the dielectric layer using the reactive species. In some embodiments, an oxide layer is disposed adjacent to the dielectric layer. In some embodiments, the flow rate ratio of the process gas can be adjusted such that an etch selectivity of the dielectric layer to at least one of the oxide layer or the substrate is between about 0.8 to about 4.

公开(公告)号：WO2010059790A2

公开(公告)日：2010-05-27

申请号：PCT/US2009/065088

申请日：2009-11-19

Applicant: APPLIED MATERIALS, INC. ,  KAO, Chien-Teh ,  LU, Xinliang ,  GE, Zhenbin ,  CHANG, Mei ,  HUNG, Hoiman, Raymond ,  INGLE, Nitin

Inventor： KAO, Chien-Teh ,  LU, Xinliang ,  GE, Zhenbin ,  CHANG, Mei ,  HUNG, Hoiman, Raymond ,  INGLE, Nitin

IPC: H01L21/76 ,  H01L21/306

CPC classification number: H01L21/76232 ,  H01L21/67219 ,  H01L27/11521

Abstract: Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to apparatus and methods for forming shallow trench isolations having recesses with rounded bottoms. One embodiment of the present invention comprises forming a recess in a filled trench structure by removing a portion of a material from the filled trench structure and rounding bottom corners of the recess. Rounding bottom corners is performed by depositing a conformal layer of the same material filled in the trench structure over the substrate and removing the conformal layer of the material from sidewalls of the recess.

Abstract translation: 本发明的实施例一般涉及用于处理半导体衬底的装置和方法。 特别地，本发明的实施例涉及用于形成具有具有圆形底部的凹部的浅沟槽隔离的装置和方法。 本发明的一个实施例包括通过从填充的沟槽结构中去除一部分材料并且使凹部的圆角底部倒圆，在填充的沟槽结构中形成凹陷。 通过将填充在沟槽结构中的相同材料的共形层沉积在衬底上并且从凹部的侧壁去除材料的共形层来进行圆角底角。

公开(公告)号：WO2010042552A2

公开(公告)日：2010-04-15

申请号：PCT/US2009059743

申请日：2009-10-06

Applicant: APPLIED MATERIALS INC ,  LU XINLIANG ,  YANG HAICHUN ,  GE ZHENBIN ,  LU NAN ,  OR DAVID T ,  KAO CHIEN-TEH ,  CHANG MEI

Inventor： LU XINLIANG ,  YANG HAICHUN ,  GE ZHENBIN ,  LU NAN ,  OR DAVID T ,  KAO CHIEN-TEH ,  CHANG MEI

IPC: H01L21/3065

CPC classification number: H01L21/31116

Abstract: Methods for etching dielectric layers comprising silicon and nitrogen are provided herein. In some embodiments, such methods may include providing a substrate having a dielectric layer comprising silicon and nitrogen disposed thereon, forming reactive species from a process gas comprising hydrogen (H2) and nitrogen trifluoride (NF3) using a remote plasma; and etching the dielectric layer using the reactive species. In some embodiments, an oxide layer is disposed adjacent to the dielectric layer. In some embodiments, the flow rate ratio of the process gas can be adjusted such that an etch selectivity of the dielectric layer to at least one of the oxide layer or the substrate is between about 0.8 to about 4.

Abstract translation: 本文提供了用于蚀刻包括硅和氮的介电层的方法。 在一些实施例中，这样的方法可以包括提供具有布置在其上的包含硅和氮的电介质层的衬底，使用远程等离子体从包含氢（H 2）和三氟化氮（NF 3）的工艺气体形成反应物种; 并使用反应性物质蚀刻电介质层。 在一些实施例中，氧化物层邻近电介质层设置。 在一些实施例中，可以调节处理气体的流速比，使得电介质层与至少一个氧化物层或衬底的蚀刻选择性在约0.8至约4之间。

公开(公告)号：WO2010115128A4

公开(公告)日：2011-03-03

申请号：PCT/US2010029815

申请日：2010-04-02

Applicant: APPLIED MATERIALS INC ,  ALLEN ADOLPH MILLER ,  HAWRYLCHAK LARA ,  XIE ZHIGANG ,  RASHEED MUHAMMAND M ,  WANG RONGJUN ,  TANG XIANMIN ,  LIU ZHENDONG ,  GUNG TZA-JING ,  GANDIKOTA SRINIVAS ,  CHANG MEI ,  COX MICHAEL S ,  YOUNG DONNY ,  SAVANDAIAH KIRANKUMAR ,  GE ZHENBIN

Inventor： ALLEN ADOLPH MILLER ,  HAWRYLCHAK LARA ,  XIE ZHIGANG ,  RASHEED MUHAMMAND M ,  WANG RONGJUN ,  TANG XIANMIN ,  LIU ZHENDONG ,  GUNG TZA-JING ,  GANDIKOTA SRINIVAS ,  CHANG MEI ,  COX MICHAEL S ,  YOUNG DONNY ,  SAVANDAIAH KIRANKUMAR ,  GE ZHENBIN

IPC: H01L21/203 ,  C23C14/34

CPC classification number: C23C14/564 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/548 ,  H01J37/32642 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3441 ,  H01J37/3455

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

公开(公告)号：WO2010115128A2

公开(公告)日：2010-10-07

申请号：PCT/US2010029815

申请日：2010-04-02

Applicant: APPLIED MATERIALS INC ,  ALLEN ADOLPH MILLER ,  HAWRYLCHAK LARA ,  XIE ZHIGANG ,  RASHEED MUHAMMAND M ,  WANG RONGJUN ,  TANG XIANMIN ,  LIU ZHENDONG ,  GUNG TZA-JING ,  GANDIKOTA SRINIVAS ,  CHANG MEI ,  COX MICHAEL S ,  YOUNG DONNY ,  SAVANDAIAH KIRANKUMAR ,  GE ZHENBIN

Inventor： ALLEN ADOLPH MILLER ,  HAWRYLCHAK LARA ,  XIE ZHIGANG ,  RASHEED MUHAMMAND M ,  WANG RONGJUN ,  TANG XIANMIN ,  LIU ZHENDONG ,  GUNG TZA-JING ,  GANDIKOTA SRINIVAS ,  CHANG MEI ,  COX MICHAEL S ,  YOUNG DONNY ,  SAVANDAIAH KIRANKUMAR ,  GE ZHENBIN

IPC: H01L21/203 ,  C23C14/34

CPC classification number: C23C14/564 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/548 ,  H01J37/32642 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3441 ,  H01J37/3455

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

Abstract translation: 本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。 处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。 该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置 的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

公开(公告)号：WO2010059790A3

公开(公告)日：2010-08-05

申请号：PCT/US2009065088

申请日：2009-11-19

Applicant: APPLIED MATERIALS INC ,  KAO CHIEN-TEH ,  LU XINLIANG ,  GE ZHENBIN ,  CHANG MEI ,  HUNG HOIMAN RAYMOND ,  INGLE NITIN

Inventor： KAO CHIEN-TEH ,  LU XINLIANG ,  GE ZHENBIN ,  CHANG MEI ,  HUNG HOIMAN RAYMOND ,  INGLE NITIN

IPC: H01L21/76 ,  H01L21/306

CPC classification number: H01L21/76232 ,  H01L21/67219 ,  H01L27/11521

Abstract: Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to apparatus and methods for forming shallow trench isolations having recesses with rounded bottoms. One embodiment of the present invention comprises forming a recess in a filled trench structure by removing a portion of a material from the filled trench structure and rounding bottom corners of the recess. Rounding bottom corners is performed by depositing a conformal layer of the same material filled in the trench structure over the substrate and removing the conformal layer of the material from sidewalls of the recess.

Abstract translation: 本发明的实施例总体上涉及用于处理半导体衬底的设备和方法。 特别地，本发明的实施例涉及用于形成具有圆底的凹陷的浅沟槽隔离的装置和方法。 本发明的一个实施例包括通过从填充的沟槽结构去除一部分材料并且使凹陷的底部角落倒圆来在填充的沟槽结构中形成凹槽。 通过在衬底上方沉积填充在沟槽结构中的相同材料的共形层并从凹槽的侧壁去除材料的共形层来执行圆角底部拐角。

公开(公告)号：WO2010059868A3

公开(公告)日：2010-05-27

申请号：PCT/US2009/065208

申请日：2009-11-19

Applicant: APPLIED MATERIALS, INC. ,  CHANG, Mei ,  KAO, Chien-Teh ,  LU, Xin Liang ,  GE, Zhenbin

Inventor： CHANG, Mei ,  KAO, Chien-Teh ,  LU, Xin Liang ,  GE, Zhenbin

IPC: H01L21/28 ,  H01L21/336

Abstract: Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to methods and apparatus for trench and via profile modification prior to filling the trench and via. One embodiment of the present invention comprises forming a sacrifice layer to pinch off a top opening of a trench structure by exposing the trench structure to an etchant. In one embodiment, the etchant is configured to remove the first material by reacting with the first material and generating a by-product, which forms the sacrifice layer.