公开(公告)号：WO2013192018A2

公开(公告)日：2013-12-27

申请号：PCT/US2013045747

申请日：2013-06-13

Applicant: SEAGATE TECHNOLOGY LLC ,  HWU JUSTIN JIA-JEN ,  GAUZNER GENNADY ,  GREENBERG THOMAS LARSON

Inventor： HWU JUSTIN JIA-JEN ,  GAUZNER GENNADY ,  GREENBERG THOMAS LARSON

CPC classification number: G03F7/0002

Abstract: Resist imprinting void reduction method may include sealing a chamber. The chamber may be filled with an ambient inert gas, wherein the inert gas a solubility in a resist layer on a substrate greater than Helium. The method may also include establishing a pressure within the chamber sufficient to cause absorption of the ambient inert gas by the resist layer, and sufficient to suppress evaporation of the resist layer.

Abstract translation: 抗蚀刻印痕空隙缩小法可包括密封腔室。 室可以填充有环境惰性气体，其中惰性气体在基底上的抗蚀剂层中的溶解度大于氦。 该方法还可以包括在室内建立足以使抗蚀剂层吸收环境惰性气体并足以抑制抗蚀剂层蒸发的压力。

公开(公告)号：WO2013003745A3

公开(公告)日：2013-03-14

申请号：PCT/US2012044986

申请日：2012-06-29

Applicant: SEAGATE TECHNOLOGY LLC ,  FELDBAUM MICHAEL R ,  HWU JUSTIN JIA-JEN ,  KUO DAVID S ,  GAUZNER GENNADY ,  WANG LI-PING

Inventor： FELDBAUM MICHAEL R ,  HWU JUSTIN JIA-JEN ,  KUO DAVID S ,  GAUZNER GENNADY ,  WANG LI-PING

IPC: H01L21/3065

CPC classification number: H01J37/30 ,  H01J37/3053 ,  H01J37/3056 ,  H01J2237/2007 ,  H01J2237/31749

Abstract: The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack.

Abstract translation: 实施例公开了一种堆叠图案化的方法，包括将堆叠装载到固定堆叠台中，使基本上与固定堆叠台同心对准的一个或多个离子束栅格组件旋转，以蚀刻堆叠并控制一个或多个离子束 栅格组件以实现蚀刻堆叠的显着的轴向均匀性。

公开(公告)号：WO2013192018A3

公开(公告)日：2014-05-15

申请号：PCT/US2013045747

申请日：2013-06-13

Applicant: SEAGATE TECHNOLOGY LLC ,  HWU JUSTIN JIA-JEN ,  GAUZNER GENNADY ,  GREENBERG THOMAS LARSON

Inventor： HWU JUSTIN JIA-JEN ,  GAUZNER GENNADY ,  GREENBERG THOMAS LARSON

IPC: B29C59/02 ,  B82B3/00

CPC classification number: G03F7/0002

Abstract: Resist imprinting void reduction method may include sealing a chamber. The chamber may be filled with an ambient inert gas, wherein the inert gas a solubility in a resist layer on a substrate greater than Helium. The method may also include establishing a pressure within the chamber sufficient to cause absorption of the ambient inert gas by the resist layer, and sufficient to suppress evaporation of the resist layer.

Abstract translation: 抗印刻空隙减少方法可以包括密封室。 腔室可以充满环境惰性气体，其中惰性气体在基板上的抗蚀剂层中的溶解度高于氦气。 该方法还可以包括在腔室内建立足以引起抗蚀剂层对环境惰性气体的吸收并且足以抑制抗蚀剂层的蒸发的压力。

公开(公告)号：WO2013192018A9

公开(公告)日：2013-12-27

申请号：PCT/US2013/045747

申请日：2013-06-13

Applicant: SEAGATE TECHNOLOGY LLC ,  HWU, Justin Jia-Jen ,  GAUZNER, Gennady ,  GREENBERG, Thomas Larson

Inventor： HWU, Justin Jia-Jen ,  GAUZNER, Gennady ,  GREENBERG, Thomas Larson

IPC: B29C59/02 ,  B82B3/00

Abstract: Resist imprinting void reduction method may include sealing a chamber. The chamber may be filled with an ambient inert gas, wherein the inert gas a solubility in a resist layer on a substrate greater than Helium. The method may also include establishing a pressure within the chamber sufficient to cause absorption of the ambient inert gas by the resist layer, and sufficient to suppress evaporation of the resist layer.

公开(公告)号：WO2013003745A2

公开(公告)日：2013-01-03

申请号：PCT/US2012/044986

申请日：2012-06-29

Applicant: SEAGATE TECHNOLOGY, LLC ,  FELDBAUM, Michael R. ,  HWU, Justin Jia-Jen ,  KUO, David S. ,  GAUZNER, Gennady ,  WANG, Li-Ping

Inventor： FELDBAUM, Michael R. ,  HWU, Justin Jia-Jen ,  KUO, David S. ,  GAUZNER, Gennady ,  WANG, Li-Ping

CPC classification number: H01J37/30 ,  H01J37/3053 ,  H01J37/3056 ,  H01J2237/2007 ,  H01J2237/31749

Abstract: The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack.

Abstract translation: 这些实施例公开了一种堆叠图案化的方法，包括将堆放入固定的堆叠台中，旋转一个或多个离子束栅组件，该一个或多个离子束栅组件基本上与固定的堆叠台同心对准以蚀刻堆叠并控制 一个或多个离子束栅格组件的操作以实现蚀刻叠层的基本轴向均匀性。