摘要:
Transmission electron microscopes (TEMs) are being utilized more often in failure analysis labs as processing nodes decrease and alternative device structures, such as three dimensional, multi-gate transistors, e.g., FinFETs (Fin Field Effect Transistors), are utilized in IC designs. However, these types of structures may confuse typical TEM sample (or "lamella") preparation as the resulting lamella may contain multiple potentially faulty structures, making it difficult to identify the actual faulty structure. Passive voltage contrast may be used in a dual beam focused ion beam (FIB) microscope system including a scanning electron microscope (SEM) column by systematically identifying non-faulty structures and milling them from the lamella until the faulty structure is identified.
摘要翻译:透射电子显微镜(TEM)更常用于故障分析实验室,因为处理节点减少并且可替代的器件结构(例如三维多栅极晶体管,例如FinFET(鳍式场效应晶体管 )被用于IC设计。 然而,这些类型的结构可能会混淆典型的TEM样品(或“薄片”)制备,因为所产生的薄片可能含有多个可能有缺陷的结构,使得难以识别实际的有缺陷的结构。 被动电压对比可用于包括扫描电子显微镜(SEM)柱的双光束聚焦离子束(FIB)显微镜系统中,通过系统地识别无故障结构并将其从薄片中铣削直至识别出缺陷结构。 p >
摘要:
Disclosed are methods and apparatus for determining, using, and indicating ion beam working properties in an apparatus that performs ion beam sample preparation and coating. A beam probe may be used to measure one or more working properties of a portion of the ion beam, generating a probe signal in a known relationship to the one or more working properties. The beam probe may generate a signal in a known relationship to one or more properties of a sputtered coating reaching a sample. The ion beam apparatus may modulate one or more characteristics of the ion beam in response to receiving a signal from the beam probe. The probe signal may be used in the ion beam apparatus to indicate one or more ion beam working properties. Related apparatus and methods also permit the measurement of the known relationship between probe signal and ion beam working properties.
摘要:
An apparatus for preparing a sample for microscopy is provided that has a milling device that removes material from a sample in order to thin the sample. An electron beam that is directed onto the sample is present along with a detector that detects when the electron beam has reached a preselected threshold transmitted through or immediately adjacent the sample. Once the detector detects the electron beam has reached this threshold, the milling device terminates the milling process.
摘要:
Curtaining artifacts on high aspect ratio features are reduced by reducing the distance between a protective layer and feature of interest. For example, the ion beam can mill at an angle to the work piece surface to create a sloped surface. A protective layer is deposited onto the sloped surface, and the ion beam mills through the protective layer to expose the feature of interest for analysis. The sloped mill positions the protective layer close to the feature of interest to reduce curtaining.
摘要:
Disclosed are embodiments of an ion beam sample preparation apparatus and methods. The methods operate on a sample disposed in a vacuum chamber and include steps of directing an intensity-controllable, tilt-angle controllable ion beam at a sample holder coupled to a rotation stage. The methods further include illuminating and capturing one or more images of the sample, extracting useful features from one or more images and thereafter adjusting the sample preparation steps. Further methods are disclosed for capturing sequences of images, programmatically rotating images, and displaying sequences of images with similar rotation angles. Further methods include extracting useful features from sequences of images that may change with respect to time as ion beam preparation continues
摘要:
Die vorliegende Erfindung bezieht sich auf ein Verfahren zur Präparation einer Probe für die Mikrostrukturdiagnostik, insbesondere für die Transmissionselektronenmikroskopie TEM, die Rasterelektronenmikroskopie oder die Röntgenabsorptionsspektroskopie, wobei eine flache, bevorzugt planparallele Scheibe entlang ihrer beiden gegenüberliegenden Oberflächen jeweils so mit einem energiereichen Strahl bestrahlt wird, dass durch strahlbedingten Materialabtrag in diese beiden Oberflächen jeweils eine bevorzugt parallel zu einer zentralen Scheibenebene verlaufende Vertiefung eingebracht wird, wobei diese beiden Vertiefungen beidseits dieser/einer zentralen Scheibenebene verlaufend so eingebracht werden, dass sich ihre Längsachsen, bei Projektion dieser Längsachsen auf diese zentrale Scheibenebene gesehen, unter einem vordefinierten Winkel α > 0°, bevorzugt α ≥ 10°, bevorzugt α ≥ 20°, bevorzugt α ≥ 30°, schneiden und dass im Schnittbereich der beiden Vertiefungen zwischen diesen ein bevorzugt bereits elektronenstrahltransparenter Materialabschnitt vordefinierter minimaler Dicke, gesehen senkrecht zu dieser zentralen Scheibenebene, als Probe verbleibt. Die Erfindung bezieht sich auch auf eine entsprechend ausgebildete Vorrichtung.
摘要:
A method of reducing the roughness profile in a plurality of patterned resist features. Each patterned resist feature includes a first sidewall and a second sidewall opposite the first sidewall, wherein each patterned resist feature comprises a mid frequency line width roughness and a low frequency linewidth roughness. A plurality of ion exposure cycles are performed, wherein each ion exposure cycle comprises providing ions at a tilt angle of about five degrees or larger upon the first sidewall, and providing ions at a tilt angle of about five degrees or larger upon the second sidewall. Upon the performing of the plurality of ion exposure cycles the mid frequency and low frequency linewidth roughness are reduced.
摘要:
Método para fabricar nanoagujas en zonas de interés localizadas en el interior de muestras sólidas a escala nanométrica. Este método está relacionado con la preparación de muestras por FIB para su análisis por cualquier técnica donde es interesante estudiar una característica independiente del material, o donde es útil tener una característica concreta en una nanoaguja como para la fabricación de nanoagujas SNOM. La preparación de muestra por FIB permite seleccionar características concretas de la superficie de la muestra a escala nanométrica, pero cuando la zona de interés está localizada en el interior de una muestra sólida, es necesario una nueva metodología. Este método se presenta en la presente invención, donde se combina fabricación por FIB incluyendo la introducción de marcas en una capa de material electrón- transparente y la observación por TEM, de modo que se consigue seleccionar una característica concreta del interior del material y fabricar una nanoaguja con ella.