公开(公告)号：WO2007024730A3

公开(公告)日：2009-04-16

申请号：PCT/US2006032431

申请日：2006-08-21

Applicant: INOVATIVE MICRO TECHNOLOGY ,  ERLACH DAVID M ,  SUMMERS JEFFERY F ,  THOMPSON DOUGLAS L

Inventor： ERLACH DAVID M ,  SUMMERS JEFFERY F ,  THOMPSON DOUGLAS L

IPC: H01L21/00 ,  H01L33/00

CPC classification number: B81C1/00269 ,  B81C2203/0118 ,  B81C2203/019 ,  Y10T29/5317

Abstract: Systems and methods for forming an encapsulated MEMS device include a hermetic seal which seals an insulating gas between two substrates, one of which supports the MEMS device. The hermetic seal may be formed by heating at least two metal layers, in order to melt at least one of the metal layers. The first melted metal material flows into and forms an alloy with a second metal material, forming a hermetic seal which encapsulates the MEMS device.

Abstract translation: 用于形成封装的MEMS器件的系统和方法包括密封两个衬底之间的绝缘气体的气密密封件，其中之一支撑MEMS器件。 可以通过加热至少两个金属层来形成气密密封，以便熔化至少一个金属层。 第一熔化的金属材料流入并与第二金属材料形成合金，形成封装MEMS装置的气密密封。

公开(公告)号：WO2007024732A3

公开(公告)日：2009-06-25

申请号：PCT/US2006032433

申请日：2006-08-21

Applicant: INOVATIVE MICRO TECHNOLOGY ,  WALLIS ANDREW D ,  FOSTER JOHN S ,  RUBEL PAUL J ,  RYBNICEK KIMON ,  SHILLINGER MICHAEL J ,  SUMMERS JEFFERY F

Inventor： WALLIS ANDREW D ,  FOSTER JOHN S ,  RUBEL PAUL J ,  RYBNICEK KIMON ,  SHILLINGER MICHAEL J ,  SUMMERS JEFFERY F

IPC: H01H51/22

CPC classification number: H01H59/0009

Abstract: Systems and methods for forming an electrostatic MEMS switch (100) include forming a cantilevered beam (1310) on a first substrate (1100), forming the electrical contacts (2610, 2620, 2630 and 2640) on a second substrate (2100), and coupling the two substrates using a hermetic seal. The hermetic seal may be a gold/indium alloy, formed by heating a layer of indium (2820, 2830) plated over a layer of gold (1820, 1830). Electrical access to the electrostatic MEMS switch may be made by forming vias (2410, 2420, 2430 and 2440) through the thickness of the second substrate.

Abstract translation: 用于形成静电MEMS开关（100）的系统和方法包括在第一基板（1100）上形成悬臂梁（1310），在第二基板（2100）上形成电触头（2610,2620,2630和2640），以及 使用气密密封来连接两个基板。 气密密封可以是通过在一层金（1820,1830）上镀上一层铟（2820,2830）形成的金/铟合金。 可以通过形成穿过第二基板的厚度的通孔（2410,2420,2430和2440）来进行对静电MEMS开关的电接入。

公开(公告)号：WO2007024731A3

公开(公告)日：2007-11-08

申请号：PCT/US2006032432

申请日：2006-08-21

Applicant: INOVATIVE MICRO TECHNOLOGY ,  CARLSON GREGORY A ,  SUMMERS JEFFERY F

Inventor： CARLSON GREGORY A ,  SUMMERS JEFFERY F

IPC: H01L23/58

CPC classification number: B81B7/007 ,  H01L23/10 ,  H01L23/49894 ,  H01L2924/16235

Abstract: A hermetic interconnect is fabricated on a substrate by forming a stud of conductive material over a metallization layer, and then overcoating the stud of conductive material and the metallization layer with a layer of compliant dielectric material. In one embodiment, the layer of compliant dielectric material is low Young's modulus silicon dioxide, formed by sputter-deposition at low temperature, in alow pressure argon atmosphere. The interconnect may provide electrical access to a micromechanical device, which is enclosed with a capping wafer hermetically sealed to the substrate with an AuIn x alloy bond.

Abstract translation: 通过在金属化层上形成导电材料柱，然后用导电材料柱和金属化层用柔性介电材料层覆盖，在衬底上制造气密互连。 在一个实施例中，柔性电介质材料层是在低压氩气气氛中通过在低温下溅射沉积形成的低杨氏模量二氧化硅。 互连可以提供对微机械装置的电接入，该微机械装置用与金属合金接头密封在衬底上的封盖晶片封闭。

公开(公告)号：WO2007024731A2

公开(公告)日：2007-03-01

申请号：PCT/US2006/032432

申请日：2006-08-21

Applicant: INOVATIVE MICRO TECHNOLOGY ,  CARLSON, Gregory, A. ,  SUMMERS, Jeffery, F.

Inventor： CARLSON, Gregory, A. ,  SUMMERS, Jeffery, F.

IPC: H01L23/58 ,  H01L21/469

CPC classification number: B81B7/007 ,  H01L23/10 ,  H01L23/49894 ,  H01L2924/16235

Abstract: A hermetic interconnect is fabricated on a substrate by forming a stud of conductive material over a metallization layer, and then overcoating the stud of conductive material and the metallization layer with a layer of compliant dielectric material. In one embodiment, the layer of compliant dielectric material is low Young's modulus silicon dioxide, formed by sputter-deposition at low temperature, in alow pressure argon atmosphere. The interconnect may provide electrical access to a micromechanical device, which is enclosed with a capping wafer hermetically sealed to the substrate with an AuIn x alloy bond.

Abstract translation: 通过在金属化层上形成导电材料柱，然后用导电材料柱和金属化层涂覆柔性介电材料层来在基底上制造密封互连。 在一个实施例中，柔性介电材料层是低压杨氏模量二氧化硅，其通过在低压下在低压氩气氛中溅射沉积而形成。 该互连可以提供对微机械器件的电接入，该微机械器件被用AuIn x合金键气密密封到衬底的封盖晶片封闭。

公开(公告)号：WO2007024732A2

公开(公告)日：2007-03-01

申请号：PCT/US2006/032433

申请日：2006-08-21

Applicant: INOVATIVE MICRO TECHNOLOGY ,  WALLIS, Andrew, D. ,  FOSTER, John, S. ,  RUBEL, Paul, J. ,  RYBNICEK, Kimon ,  SHILLINGER, Michael, J. ,  SUMMERS, Jeffery, F.

Inventor： WALLIS, Andrew, D. ,  FOSTER, John, S. ,  RUBEL, Paul, J. ,  RYBNICEK, Kimon ,  SHILLINGER, Michael, J. ,  SUMMERS, Jeffery, F.

IPC: H01H51/22

CPC classification number: H01H59/0009

Abstract: Systems and methods for forming an electrostatic MEMS switch include forming a cantilevered beam on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. The hermetic seal may be a gold/indium alloy, formed by heating a layer of indium plated over a layer of gold. Electrical access to the electrostatic MEMS switch may be made by forming vias through the thickness of the second substrate.

Abstract translation: 用于形成静电MEMS开关的系统和方法包括在第一基板上形成悬臂梁，在第二基板上形成电触点，并且使用气密密封来连接两个基板。 气密密封可以是金/铟合金，通过加热镀在一层金上的铟层而形成。 可以通过形成穿过第二基板的厚度的通孔来进行对静电MEMS开关的电接入。

公开(公告)号：WO2007024730A2

公开(公告)日：2007-03-01

申请号：PCT/US2006/032431

申请日：2006-08-21

Applicant: INOVATIVE MICRO TECHNOLOGY ,  ERLACH, David, M. ,  SUMMERS, Jeffery, F. ,  THOMPSON, Douglas, L.

Inventor： ERLACH, David, M. ,  SUMMERS, Jeffery, F. ,  THOMPSON, Douglas, L.

IPC: H01L21/00

CPC classification number: B81C1/00269 ,  B81C2203/0118 ,  B81C2203/019 ,  Y10T29/5317

Abstract: Systems and methods for forming an encapsulated MEMS device include a hermetic seal which seals an insulating gas between two substrates, one of which supports the MEMS device. The hermetic seal may be formed by heating at least two metal layers, in order to melt at least one of the metal layers. The first melted metal material flows into and forms an alloy with a second metal material, forming a hermetic seal which encapsulates the MEMS device.

Abstract translation: 用于形成封装的MEMS器件的系统和方法包括密封两个衬底之间的绝缘气体的气密密封件，其中之一支撑MEMS器件。 可以通过加热至少两个金属层来形成气密密封，以便熔化至少一个金属层。 第一熔化的金属材料流入并与第二金属材料形成合金，形成封装MEMS装置的气密密封。