公开(公告)号：WO2009058235A2

公开(公告)日：2009-05-07

申请号：PCT/US2008/012173

申请日：2008-10-27

Applicant: LAM RESEARCH CORPORATION ,  CERADYNE INC. ,  TAYLOR, Travis R. ,  SRINIVASAN, Mukund ,  KADKHODAYAN, Bobby ,  RAMANUJAM, K. Y. ,  MIKIJELJ, Biljana ,  WU, Shanghua

Inventor： TAYLOR, Travis R. ,  SRINIVASAN, Mukund ,  KADKHODAYAN, Bobby ,  RAMANUJAM, K. Y. ,  MIKIJELJ, Biljana ,  WU, Shanghua

IPC: H01L21/3065

CPC classification number: C04B35/593 ,  C04B2235/3206 ,  C04B2235/3418 ,  C04B2235/72 ,  C04B2235/77 ,  H01J37/32467 ,  H01L21/3065

Abstract: A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered silicon nitride component includes high purity silicon nitride and a sintering aid consisting of silicon dioxide. A plasma processing chamber is provided including the sintered silicon nitride component. A method of reducing metallic contamination on the surface of a silicon substrate during plasma processing is provided with a plasma processing apparatus including one or more sintered silicon nitride components. A method of manufacturing a component exposed to ion bombardment and/or plasma erosion in a plasma etch chamber, comprising shaping a powder composition consisting of high purity silicon nitride and silicon dioxide and densifying the shaped component.

Abstract translation: 提供了一种增加等离子体蚀刻室清洁之间的平均时间和室部件寿命的方法。 在使用暴露于离子轰击和/或电离卤素气体的至少一种烧结氮化硅组件的同时，半导体衬底在腔室中进行等离子体蚀刻。 烧结氮化硅组分包括高纯度氮化硅和由二氧化硅组成的烧结助剂。 提供了包括烧结氮化硅组分的等离子体处理室。 提供了一种在等离子体处理期间减少硅衬底表面上的金属污染的方法，该等离子体处理装置包括一个或多个烧结氮化硅组分。 一种在等离子体蚀刻室中制造暴露于离子轰击和/或等离子体侵蚀的部件的方法，包括使由高纯度氮化硅和二氧化硅组成的粉末组合物成形并致密化成形部件。

公开(公告)号：WO2009099661A3

公开(公告)日：2009-08-13

申请号：PCT/US2009/000786

申请日：2009-02-06

Applicant: LAM RESEARCH CORPORATION ,  KADKHODAYAN, Bobby ,  MCCHESNEY, Jon ,  PAPE, Eric ,  DHINDSA, Rajinder

Inventor： KADKHODAYAN, Bobby ,  MCCHESNEY, Jon ,  PAPE, Eric ,  DHINDSA, Rajinder

IPC: H01L21/3065 ,  H01L21/205 ,  H01L21/00

Abstract: A flexible polymer or elastomer coated RF return strap to be used in a plasma chamber to protect the RF strap from plasma generated radicals such as fluorine and oxygen radicals, and a method of processing a semiconductor substrate with reduced particle contamination in a plasma processing apparatus. The coated RF strap minimizes particle generation and exhibits lower erosion rates than an uncoated base component. Such a coated member having a flexible coating on a conductive flexible base component provides an RF ground return configured to allow movement of one or more electrodes in an adjustable gap capacitively coupled plasma reactor chamber.

公开(公告)号：WO2009099661A2

公开(公告)日：2009-08-13

申请号：PCT/US2009000786

申请日：2009-02-06

Applicant: LAM RES CORP ,  KADKHODAYAN BOBBY ,  MCCHESNEY JON ,  PAPE ERIC ,  DHINDSA RAJINDER

Inventor： KADKHODAYAN BOBBY ,  MCCHESNEY JON ,  PAPE ERIC ,  DHINDSA RAJINDER

IPC: H01L21/3065 ,  H01L21/00 ,  H01L21/20

CPC classification number: H01L21/3065 ,  C23C14/564 ,  C23C16/4401 ,  C23C16/505 ,  H01J37/16 ,  H01J37/32091 ,  H01J37/32495 ,  H01J37/32568 ,  H01J2237/0213 ,  H01L21/02104 ,  H01L21/67017 ,  H01L21/67069

Abstract: A flexible polymer or elastomer coated RF return strap to be used in a plasma chamber to protect the RF strap from plasma generated radicals such as fluorine and oxygen radicals, and a method of processing a semiconductor substrate with reduced particle contamination in a plasma processing apparatus. The coated RF strap minimizes particle generation and exhibits lower erosion rates than an uncoated base component. Such a coated member having a flexible coating on a conductive flexible base component provides an RF ground return configured to allow movement of one or more electrodes in an adjustable gap capacitively coupled plasma reactor chamber.

Abstract translation: 用于等离子体室中的柔性聚合物或弹性体涂覆的RF返回带，以保护RF带免受等离子体产生的自由基，例如氟和氧自由基，以及在等离子体处理装置中处理具有减少的颗粒污染的半导体衬底的方法。 涂覆的RF带最小化颗粒产生并且比未涂覆的基底部件具有更低的侵蚀速率。 这种在导电柔性基座部件上具有柔性涂层的涂覆部件提供了RF接地回路，其被配置为允许一个或多个电极在可调节间隙电容耦合等离子体反应器室中移动。

公开(公告)号：WO2009058235A3

公开(公告)日：2009-06-18

申请号：PCT/US2008012173

申请日：2008-10-27

Applicant: LAM RES CORP ,  CERADYNE INC ,  TAYLOR TRAVIS R ,  SRINIVASAN MUKUND ,  KADKHODAYAN BOBBY ,  RAMANUJAM K Y ,  MIKIJELJ BILJANA ,  WU SHANGHUA

Inventor： TAYLOR TRAVIS R ,  SRINIVASAN MUKUND ,  KADKHODAYAN BOBBY ,  RAMANUJAM K Y ,  MIKIJELJ BILJANA ,  WU SHANGHUA

IPC: H01L21/3065

CPC classification number: C04B35/593 ,  C04B2235/3206 ,  C04B2235/3418 ,  C04B2235/72 ,  C04B2235/77 ,  H01J37/32467 ,  H01L21/3065

Abstract: A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered silicon nitride component includes high purity silicon nitride and a sintering aid consisting of silicon dioxide. A plasma processing chamber is provided including the sintered silicon nitride component. A method of reducing metallic contamination on the surface of a silicon substrate during plasma processing is provided with a plasma processing apparatus including one or more sintered silicon nitride components. A method of manufacturing a component exposed to ion bombardment and/or plasma erosion in a plasma etch chamber, comprising shaping a powder composition consisting of high purity silicon nitride and silicon dioxide and densifying the shaped component.

Abstract translation: 提供了增加等离子体蚀刻室清洁和室部件寿命之间的平均时间的方法。 在使用至少一个暴露于离子轰击的烧结氮化硅组分和/或离子化卤素气体的同时，在腔室中等离子蚀刻半导体衬底。 烧结的氮化硅组分包括高纯度氮化硅和由二氧化硅组成的烧结助剂。 提供包括烧结氮化硅部件的等离子体处理室。 在等离子体处理期间减少硅衬底表面上的金属污染的方法由等离子体处理设备提供，所述等离子体处理设备包括一个或多个烧结的氮化硅部件。 一种制造暴露于等离子体蚀刻室中的离子轰击和/或等离子体侵蚀的部件的方法，包括对由高纯度氮化硅和二氧化硅组成的粉末组合物进行成形并使成形部件致密化。