公开(公告)号：WO2012125401A1

公开(公告)日：2012-09-20

申请号：PCT/US2012/028249

申请日：2012-03-08

Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. ,  FUJIFILM CORPORATION ,  TAKAHASHI, Tomonori ,  INABA, Tadashi ,  MIZUTANI, Atsushi ,  DU, Bing ,  WOJTCZAK, William A. ,  TAKAHASHI, Kazutaka ,  KAMIMURA, Tetsuya

Inventor： TAKAHASHI, Tomonori ,  INABA, Tadashi ,  MIZUTANI, Atsushi ,  DU, Bing ,  WOJTCZAK, William A. ,  TAKAHASHI, Kazutaka ,  KAMIMURA, Tetsuya

IPC: C09K13/00

CPC classification number: H01L21/32134 ,  C09K13/06 ,  C23F1/16 ,  C23F1/28 ,  C23F1/30 ,  C23F1/44 ,  H01L21/28518 ,  H01L21/76843

Abstract: This disclosure relates to an etching composition containing at least one sulfonic acid, at least one compound containing a halide anion, the halide being chloride or bromide, at least one compound containing a nitrate or nitrosyl ion, and water. The at least one sulfonic acid can be from about 25% by weight to about 95% by weight of the composition. The halide anion can be chloride or bromide, and can be from about 0.01% by weight to about 0.5% by weight of the composition. The nitrate or nitrosyl ion can be from about 0.1% by weight to about 20% by weight of the composition. The water can be at least about 3% by weight of the composition.

Abstract translation: 本公开涉及含有至少一种磺酸，至少一种含卤化物阴离子的化合物，卤化物为氯化物或溴化物，至少一种含有硝酸根或亚硝酰基离子的化合物和水的蚀刻组合物。 所述至少一种磺酸可以为所述组合物的约25重量％至约95重量％。 卤化物阴离子可以是氯化物或溴化物，并且可以是组合物的约0.01重量％至约0.5重量％。 硝酸盐或亚硝酰离子可以为组合物的约0.1重量％至约20重量％。 水可以是组合物的至少约3重量％。