公开(公告)号：WO2012120172A1

公开(公告)日：2012-09-13

申请号：PCT/ES2012/070136

申请日：2012-03-05

Applicant: UNIVERSITAT POLITÈCNICA DE CATALUNYA ,  SCHRENK, Bernhard ,  LÁZARO VILLA, José Antonio ,  BAKOPOULOS, Paraskevas ,  KAZMIERSKI, Christophe ,  PRAT GOMÀ, Josep Joan

Inventor： SCHRENK, Bernhard ,  LÁZARO VILLA, José Antonio ,  BAKOPOULOS, Paraskevas ,  KAZMIERSKI, Christophe ,  PRAT GOMÀ, Josep Joan

IPC: H03C7/02 ,  H04B10/24

CPC classification number: H04B10/40

Abstract: Método y aparato para enlace óptico bidireccional con modulación simultánea de amplitud y fase mediante un dispositivo de semiconductor integrado y agnóstico a la longitud de onda. La presente invención se refiere a un método y aparato óptico para un enlace óptico bidireccional que utiliza un dispositivo semiconductor simple, integrado y agnóstico a la longitud de onda para lograr la transmisión señales mediante la modulación simultánea de la luz en fase y en amplitud.

Abstract translation: 本发明涉及一种双向光链路的方法和光学装置，其使用波长不可知的简单集成半导体，以通过光的同时幅度和相位调制实现信号的传输。

公开(公告)号：WO2011113902A1

公开(公告)日：2011-09-22

申请号：PCT/EP2011/054066

申请日：2011-03-17

Applicant: ALCATEL LUCENT ,  UNIVERSITAT POLITÈCNICA DE CATALUNYA ,  SCHRENK, Bernhard ,  KEHAYAS, Efstratios ,  BAKOPOULOS, Paraskevas ,  LAZARO VILLA, Jose Antonio ,  PRAT GOMA, Josep Joan ,  KAZMIERSKI, Christophe

Inventor： SCHRENK, Bernhard ,  KEHAYAS, Efstratios ,  BAKOPOULOS, Paraskevas ,  LAZARO VILLA, Jose Antonio ,  PRAT GOMA, Josep Joan ,  KAZMIERSKI, Christophe

IPC: H04B10/26

CPC classification number: H04B10/2587

Abstract: An optical network unit comprise receivers for the downstream and reflective modulators using the downstream signals for the upstream transmission, after being optically processed by means of optical downstream suppression for enabling remodulation of the downstream signal with upstream data.

Abstract translation: 光网络单元包括用于下游的接收机和反射调制器，其在通过光下行抑制被光学处理之后，使用用于上行传输的下行信号，以便能够利用上游数据重新调制下行信号。

公开(公告)号：WO1992019029A1

公开(公告)日：1992-10-29

申请号：PCT/FR1992000338

申请日：1992-04-15

Applicant: FRANCE TELECOM ,  KAZMIERSKI, Christophe ,  ROBEIN, Didier

Inventor： FRANCE TELECOM

IPC: H01S03/19

CPC classification number: H01S5/227 ,  H01S5/2275

Abstract: The optoelectronic device is comprised of an n-doped semi-conductor substrate layer (46); on the substrate layer, a lateral confinement layer (50) of semi-conductor material and doped so as to be semi-insulating; a strip (30) comprising an active material (32), said strip being buried in the lateral confinement layer and in contact with the substrate layer, the lateral confinement layer having a groove (52) cut above and along the strip; an n-doped semi-contactor insulating layer (70) deposited on either side of the groove on the lateral confinement layer; a p-doped semi-conductor vertical confinement layer (60) deposited on the insulating layer and filling the groove, the insulating layer being made of a material whose composition is different from that of the lateral and vertical confinement layers; a first electric contact connector (80, 90) on the vertical confinement layer at least to the vertical of strip (30), and a second electric contact connector (44) on the substrate layer.