公开(公告)号：WO1992019029A1

公开(公告)日：1992-10-29

申请号：PCT/FR1992000338

申请日：1992-04-15

Applicant: FRANCE TELECOM ,  KAZMIERSKI, Christophe ,  ROBEIN, Didier

Inventor： FRANCE TELECOM

IPC: H01S03/19

CPC classification number: H01S5/227 ,  H01S5/2275

Abstract: The optoelectronic device is comprised of an n-doped semi-conductor substrate layer (46); on the substrate layer, a lateral confinement layer (50) of semi-conductor material and doped so as to be semi-insulating; a strip (30) comprising an active material (32), said strip being buried in the lateral confinement layer and in contact with the substrate layer, the lateral confinement layer having a groove (52) cut above and along the strip; an n-doped semi-contactor insulating layer (70) deposited on either side of the groove on the lateral confinement layer; a p-doped semi-conductor vertical confinement layer (60) deposited on the insulating layer and filling the groove, the insulating layer being made of a material whose composition is different from that of the lateral and vertical confinement layers; a first electric contact connector (80, 90) on the vertical confinement layer at least to the vertical of strip (30), and a second electric contact connector (44) on the substrate layer.