公开(公告)号：WO0042659A3

公开(公告)日：2000-11-23

申请号：PCT/US0000999

申请日：2000-01-15

Applicant: BROADCOM CORP ,  WOO AGNES N ,  KINDSFATER KENNETH R ,  LU FANG ,  VORENKAMP PIETER

Inventor： WOO AGNES N ,  KINDSFATER KENNETH R ,  LU FANG ,  VORENKAMP PIETER

IPC: H01F17/00 ,  H01L23/522 ,  H01L27/02 ,  H01L27/08 ,  H03B5/12 ,  H03B5/36 ,  H03D7/16 ,  H03D7/18 ,  H03G1/00 ,  H03H11/12 ,  H03J3/08 ,  H03J3/18 ,  H03L7/10 ,  H03L7/23

CPC classification number: H03L7/23 ,  H01F17/0006 ,  H01F17/0013 ,  H01F2017/0053 ,  H01F2021/125 ,  H01L23/5227 ,  H01L24/06 ,  H01L27/0248 ,  H01L2224/05554 ,  H01L2924/12034 ,  H01L2924/12035 ,  H01L2924/14 ,  H01L2924/3011 ,  H03B5/364 ,  H03D7/161 ,  H03D7/18 ,  H03G1/0029 ,  H03H11/1291 ,  H03J3/08 ,  H03J3/185 ,  H03J2200/10 ,  H03L7/10 ,  H01L2924/00

Abstract: An integrated circuit ESD protection system comprises: a local power supply bus, a local ground bus, a first local ESD clamp, and ESD ground bus disposed between local power supply and ground busses and coupled to the local power supply bus through the first local ESD clamp, and coupled to the local ground bus through the second ESD clamp. The local power supply bus, the local ground bus, the first ESD clamp, the second ESD clamp and the ESD ground bus are disposed on a substrate. A reduced capacitance bonding pad is disposed on the substrate. A shunting ggNMOS ESD structure triggered by a divider circuit comprises a gate boosting structure disposed in an n-well that is coupled to the bonding pad.

Abstract translation: 集成电路ESD保护系统包括：本地电源总线，本地接地总线，第一本地ESD钳位和ESD接地总线，设置在本地电源和接地总线之间并通过第一本地ESD连接到本地电源总线 钳位，并通过第二ESD钳位耦合到本地接地总线。 本地供电总线，本地接地总线，第一ESD钳位，第二ESD钳位和ESD接地总线布置在基板上。 减小的电容键合焊盘设置在衬底上。 由分压器电路触发的分流ggNMOS ESD结构包括设置在耦合到键合焊盘的n阱中的栅极升压结构。

公开(公告)号：WO0042659A9

公开(公告)日：2001-06-21

申请号：PCT/US0000999

申请日：2000-01-15

Applicant: BROADCOM CORP ,  WOO AGNES N ,  KINDSFATER KENNETH R ,  LU FANG ,  VORENKAMP PIETER

Inventor： WOO AGNES N ,  KINDSFATER KENNETH R ,  LU FANG ,  VORENKAMP PIETER

IPC: H01F17/00 ,  H01L23/522 ,  H01L27/02 ,  H01L27/08 ,  H03B5/12 ,  H03B5/36 ,  H03D7/16 ,  H03D7/18 ,  H03G1/00 ,  H03H11/12 ,  H03J3/08 ,  H03J3/18 ,  H03L7/10 ,  H03L7/23

CPC classification number: H03L7/23 ,  H01F17/0006 ,  H01F17/0013 ,  H01F2017/0053 ,  H01F2021/125 ,  H01L23/5227 ,  H01L24/06 ,  H01L27/0248 ,  H01L2224/05554 ,  H01L2924/12034 ,  H01L2924/12035 ,  H01L2924/14 ,  H01L2924/3011 ,  H03B5/364 ,  H03D7/161 ,  H03D7/18 ,  H03G1/0029 ,  H03H11/1291 ,  H03J3/08 ,  H03J3/185 ,  H03J2200/10 ,  H03L7/10 ,  H01L2924/00

Abstract: An integrated circuit ESD protection system comprises: a local power supply bus, a local ground bus, a first local ESD clamp, and ESD ground bus disposed between local power supply and ground busses and coupled to the local power supply bus through the first local ESD clamp, and coupled to the local ground bus through the second ESD clamp. The local power supply bus, the local ground bus, the first ESD clamp, the second ESD clamp and the ESD ground bus are disposed on a substrate. A reduced capacitance bonding pad is disposed on the substrate. A shunting ggNMOS ESD structure triggered by a divider circuit comprises a gate boosting structure disposed in an n-well that is coupled to the bonding pad.

Abstract translation: 集成电路ESD保护系统包括：本地电源总线，本地接地总线，第一本地ESD钳位电路和设置在本地电源和接地总线之间的ESD接地总线，并通过第一本地ESD耦合到本地电源总线 并通过第二个ESD钳位耦合到本地接地总线。 本地电源总线，本地接地总线，第一ESD钳位，第二ESD钳位和ESD接地总线设置在基板上。 在该基板上设置有降低电容的焊盘。 由分压器电路触发的分流ggNMOS ESD结构包括设置在耦合到接合焊盘的n阱中的栅极升压结构。