WAFER LEVEL PACKAGED MEMS DEVICE
    1.
    发明申请
    WAFER LEVEL PACKAGED MEMS DEVICE 审中-公开
    晶圆级封装MEMS器件

    公开(公告)号:WO2009043062A3

    公开(公告)日:2009-09-03

    申请号:PCT/US2008080691

    申请日:2008-10-22

    Abstract: An apparatus and method for sensor architecture based on bulk machining of silicon wafers and fusion bond joining which provides a nearly all-silicon, hermetically sealed, microelectromechanical system (MEMS) device. An example device includes a device sensor mechanism (34) formed in an active semiconductor layer and separated from a handle layer (32) by a dielectric layer (36), and a silicon cover plate (40) having a handle layer (42) with a dielectric layer (44) being bonded to portions of the active layer. Pit are included in one of the handle layers (32, 42) and corresponding dielectric layers (36, 44) to access electrical leads on the active layer (44). Another example includes set backs from the active components formed by anisotropically etching the handle layer while the active layer has been protectively doped.

    Abstract translation: 一种基于硅晶片的批量加工和融合接合的传感器架构的装置和方法,其提供几乎全硅密封的微机电系统(MEMS)装置。 示例性器件包括形成于有源半导体层中并且通过介电层(36)与把手层(32)分离的器件传感器机构(34),以及具有带有处理层(42)的硅盖板(40) 介电层(44)结合到有源层的部分。 凹坑包括在一个处理层(32,42)和相应的介电层(36,44)中以接入有源层(44)上的电引线。 另一个例子包括通过各向异性地蚀刻处理层而形成的有源部件的后退,同时有源层已经被保护性地掺杂。

    WAFER LEVEL PACKAGED MEMS DEVICE
    2.
    发明申请
    WAFER LEVEL PACKAGED MEMS DEVICE 审中-公开
    WAFER LEVEL包装MEMS器件

    公开(公告)号:WO2009043062A2

    公开(公告)日:2009-04-02

    申请号:PCT/US2008/080691

    申请日:2008-10-22

    Abstract: An apparatus and method for sensor architecture based on bulk machining of silicon wafers and fusion bond joining which provides a nearly all-silicon, hermetically sealed, microelectromechanical system (MEMS) device. An example device includes a device sensor mechanism (34) formed in an active semiconductor layer and separated from a handle layer (32) by a dielectric layer (36), and a silicon cover plate (40) having a handle layer (42) with a dielectric layer (44) being bonded to portions of the active layer. Pit are included in one of the handle layers (32, 42) and corresponding dielectric layers (36, 44) to access electrical leads on the active layer (44). Another example includes set backs from the active components formed by anisotropically etching the handle layer while the active layer has been protectively doped.

    Abstract translation: 一种基于硅晶片的体加工和熔接接合的传感器架构的装置和方法,其提供了几乎全硅的气密密封的微机电系统(MEMS)装置。 示例性装置包括形成在有源半导体层中并通过介电层(36)与手柄层(32)分离的器件传感器机构(34),以及具有手柄层(42)的硅覆盖板(40) 介电层(44)与有源层的部分结合。 凹坑包括在手柄层(32,42)和对应的电介质层(36,44)中的一个中,以接触有源层(44)上的电引线。 另一个实例包括通过在有源层被保护性掺杂的同时蚀刻手柄层而形成的有源元件的背面。

    HIGH PERFORMANCE MEMS PACKAGING ARCHETECTURE
    3.
    发明申请
    HIGH PERFORMANCE MEMS PACKAGING ARCHETECTURE 审中-公开
    高性能MEMS包装架构

    公开(公告)号:WO2006078564A1

    公开(公告)日:2006-07-27

    申请号:PCT/US2006/001276

    申请日:2006-01-12

    Abstract: An apparatus and method for sensor architecture based on bulk machining of Silicon-On-Oxide wafers and fusion bonding that provides a symmetric, nearly all-silicon, hermetically sealed MEMS device having a sensor mechanism formed in an active semiconductor layer, and opposing silicon cover plates each having active layers bonded to opposite faces of the sensor mechanism. The mechanism is structured with sensor mechanical features structurally supported by at least one mechanism anchor. The active layers of the cover plates each include interior features structured to cooperate with the sensor mechanical features and an anchor structured to cooperate with the mechanism anchor. A handle layer of each cover plate includes a pit extending there through in alignment with the cover plate anchor. An unbroken rim of dielectric material forms a seal between the cover plate anchor and the pit and exposes an external surface of the cover plate anchor.

    Abstract translation: 一种用于基于硅氧化硅晶片的块体加工的传感器架构的装置和方法以及提供具有形成在有源半导体层中的传感器机构的对称的,几乎全硅的气密密封的MEMS器件以及相对的硅覆盖层 每个板具有结合到传感器机构的相对面的活性层。 该机构由结构上由至少一个机构锚固支撑的传感器机械特征构成。 盖板的有源层各自包括被构造成与传感器机械特征配合的内部特征以及被构造成与机构锚配合的锚。 每个盖板的手柄层包括在其上延伸通过与盖板锚定件对准的凹坑。 电绝缘材料的不间断边缘在盖板锚固件和凹坑之间形成密封并暴露盖板锚固件的外表面。

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