摘要:
An electric device comprises a substrate (SU) as a carrier and at least two chip components mounted thereto. In the top surface of the substrate a recess (RC) is formed. One or more chip component (BC) is mounted to the bottom surface of the recess referred to as buried chip component. One or more top chip component (TC) is mounted to the top surface of the substrate to cover at least to some extend the recess and the buried chip component. Device pads (PD) are arranged on the bottom surface of the substrate. Each of them is electrically interconnected with one or both of the chip components.
摘要:
The present invention is in the field of a semiconductor product having lithographic defined lateral wiring, a process fo making such a product, use of said process, and a chip or a chip in package having such wiring. In semiconductor processes functional electrical elements which need to be connected to an outside world by electrical conducting wires. The process used for lithographic defined lateral metal wiring in a package comprises the steps of providing a chip and a substrate, optionally placing the chip on the substrate, providing a passivation layer covering the chip, and providing openings in the passivation layer to metal pads.
摘要:
An apparatus relates generally to a microelectromechanical system component. In such an apparatus, the microelectromechanical system component has a lower surface, an upper surface, first side surfaces, and second side surfaces. Surface area of the first side surfaces is greater than surface area of the second side surfaces. The microelectromechanical system component has a plurality of wire bond wires attached to and extending away from a first side surface of the first side surfaces. The wire bond wires are self-supporting and cantilevered with respect to the first side surface of the first side surfaces.
摘要:
A transfer method, manufacturing method, device and electronic apparatus of MEMS. The method for MEMS transfer, comprising: depositing a laser-absorbing layer on a first surface of a laser-transparent carrier; forming a MEMS structure on the laser-absorbing layer; attaching the MEMS structure to a receiver; and performing a laser lift-off from the side of the carrier, to remove the carrier. A transfer of high-quality MEMS structure can be achieved in a simple, low cost manner.
摘要:
Packages and methods of formation are described. In an embodiment, a system in package (SiP) includes first and second redistribution layers (RDLs), and a plurality of die attached to the front and back side of the first RDL. The first and second RDLs are coupled together with a plurality of conductive pillars extending from the back side of the first RDL to a front side of the second RDL.
摘要:
A sensor system comprising a Micro-Electro-Mechanical Systems (MEMS)-based capacitive floating element shear stress sensor, the associated packaging, and the interface circuitry required for operation as an instrumentation-grade sensing system is disclosed herein. One implementation of the interface circuitry is an analog synchronous modulation/demodulation scheme enabling time-resolved measurements of both mean and dynamic wall shear stress events, where a modulation section couples to the sensor for sensing wall shear stress at the surface of an object in a fluid and generates at least one bias signal from the sensor output signal. In response to the bias signal, a demodulation control circuit adjusts the phase of the bias signal and generates a demodulation control signal from the phase adjusted signal. Consequently, in response to the demodulation control signal, a demodulation section synchronizes the rectification of the sensor output signal, while the phase information is maintained.
摘要:
Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities (306) in a substrate (302). Wafer bonding may also be used to bond the substrate (302) to another substrate (304), such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
摘要:
Die Erfindung betrifft ein Verfahren zum Herstellen Sensors (14), der eingerichtet ist, eine physikalische Größe basierend auf einem von der physikalischen Größe abhängigen Geberfeld zu messen, umfassend: - Verschalten einer Sensorschaltung (44) zum Erfassen des Geberfeldes und zum Ausgeben eines vom Geberfeld abhängigen Sensorsignals (16) auf einem ersten Verdrahtungsträger (32), - Verschalten des ersten Verdrahtungsträgers (32) auf einem zweiten Verdrahtungsträger (40), und - Verkapseln des zweiten Verdrahtungsträgers (40) und des darauf getragenen ersten Verdrahtungsträgers (32) mit der Sensorschaltung (44) in einer Schutzmasse (38).
摘要:
Die Erfindung betrifft einen Sensor (100) mit einem elektronischen Bauelement oder Sensorelement (102), einer elektrischen Schaltung (104) einer Fotovoltaikzelle (106) und einem Gehäuse (108). Das Sensorelement (102) ist dazu ausgebildet ein Sensorsignalunter Verwendung von elektrischer Energie bereitzustellen, wobei das Sensorsignal zumindest eine von dem Sensorelement (102) erfasste Messgröße repräsentiert. Die elektrische Schaltung (104) ist dazu ausgebildet, das Sensorsignalzu einem Datensignal unter Verwendung von elektrischer Energiezu verarbeiten. Die Fotovoltaikzelle (106) ist dazu ausgebildet, die elektrische Energie für das Sensorelement (102) und die elektrische Schaltung (104) bereitzustellen. In dem Gehäuse (108)sind das Sensorelement (102), die elektrische Schaltung (104) und die Fotovoltaikzelle (106) angeordnet. Das Gehäuse (108) weist eine Aussparung (110) auf,in der die Fotovoltaikzelle (106) angeordnet ist. Ein, die Aussparung (110) umschließender Rand (112) des Gehäuses (108) steht über die Fotovoltaikzelle (106) über.