MANUFACTURE OF THIN FILM TRANSISTORS
    3.
    发明申请
    MANUFACTURE OF THIN FILM TRANSISTORS 审中-公开
    薄膜晶体管的制造

    公开(公告)号:WO2004055917A3

    公开(公告)日:2004-09-02

    申请号:PCT/IB0305512

    申请日:2003-11-28

    CPC classification number: H01L29/66765 G02F2001/136236 G03F1/50 Y02P80/30

    Abstract: A method of manufacturing a thin film transistor (TFT), comprises a photolithography step, wherein a photopolymer 7 is applied over a metalisation layer 6 and exposed to light through a photomask 8. The photomask 8 is a transparent substrate 9 with one surface partially covered to form transparent 12a, 12b, half-tone 11 and opaque 10a, 10b areas. In order to reduce diffraction effects, half-tone areas 11 are formed using a periodic pattern of opaque and transparent areas, e.g. a checkerboard, grid or parallel lines. The exposed photopolymer is removed, leaving an indented layer of photopolymer 7 and partially uncovering the metalisation layer 6. Following etching of the uncovered metalisation layer 6, the remaining photopolymer layer 7 may be thinned, exposing further portions of the metalisation layer 6 for etching. The photomask 8 may be configured so that a half-tone area is used to define a channel and opaque areas correspond to the positions of source and drain terminals.

    Abstract translation: 制造薄膜晶体管(TFT)的方法包括光刻步骤,其中将光聚合物7施加在金属化层6上并通过光掩模8暴露于光。光掩模8是透明基板9,其一个表面部分被覆盖 以形成透明的12a,12b,半色调11和不透明的10a,10b区域。 为了减少衍射效应,使用不透明区域和透明区域的周期性图案形成半色调区域11。 棋盘,网格或平行线。 去除暴露的光聚合物,留下光密聚合物7的凹陷层并部分地露出金属化层6.在蚀刻未覆盖的金属化层6之后,剩余的光聚合物层7可以变薄,暴露金属化层6的另外部分用于蚀刻。 光掩模8可以被配置为使得半色调区域用于限定通道,并且不透明区域对应于源极和漏极端子的位置。

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