Abstract:
A flat panel display having a black mask EMI layer (58) isolated from Vcom (62) and tied to zero potential. The flat panel display has an integral metal heater layer (70) and thermal sensor (82) that are in close proximity to the liquid crystals to provide efficient heating and temperature sensing.
Abstract:
A flat panel display (10) having a black mask EMI layer isolated (32) from Vcom and tied to zero potential. The flat panel display (10) has an integral metal heater layer (34) and thermal sensor (82) that are in close proximity to the liquid crystals (14) to provide efficient heating and temperature sensing.
Abstract:
A method of manufacturing a thin film transistor (TFT), comprises a photolithography step, wherein a photopolymer 7 is applied over a metalisation layer 6 and exposed to light through a photomask 8. The photomask 8 is a transparent substrate 9 with one surface partially covered to form transparent 12a, 12b, half-tone 11 and opaque 10a, 10b areas. In order to reduce diffraction effects, half-tone areas 11 are formed using a periodic pattern of opaque and transparent areas, e.g. a checkerboard, grid or parallel lines. The exposed photopolymer is removed, leaving an indented layer of photopolymer 7 and partially uncovering the metalisation layer 6. Following etching of the uncovered metalisation layer 6, the remaining photopolymer layer 7 may be thinned, exposing further portions of the metalisation layer 6 for etching. The photomask 8 may be configured so that a half-tone area is used to define a channel and opaque areas correspond to the positions of source and drain terminals.