公开(公告)号：WO2018236369A1

公开(公告)日：2018-12-27

申请号：PCT/US2017/038507

申请日：2017-06-21

Applicant: INTEL CORPORATION ,  CHAWLA, Jasmeet S. ,  MANIPATRUNI, Sasikanth ,  LIN, Chia-Ching ,  NIKONOV, Dmitri E. ,  YOUNG, Ian A.

Inventor： CHAWLA, Jasmeet S. ,  MANIPATRUNI, Sasikanth ,  LIN, Chia-Ching ,  NIKONOV, Dmitri E. ,  YOUNG, Ian A.

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/10 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

Abstract: Embodiments are generally directed to enhanced materials processing for magneto-electric spin orbit (MESO) devices. An embodiment of an apparatus includes a first transistor and a second transistor, each transistor including a gate electrode, a first junction region, and a second junction region; a set of lines including alternating ferromagnetic material lines and non-magnetic metal interconnect lines fabricated in a wafer, the plurality of lines including metal interconnect lines to provide connections for the junction regions of the first and second transistors, including connections to provide power and control; and a MESO device including a first magnet and a second magnet, the set of lines including ferromagnetic material lines for fabrication of the MESO device magnets.

公开(公告)号：WO2018118091A1

公开(公告)日：2018-06-28

申请号：PCT/US2016/068584

申请日：2016-12-23

Applicant: INTEL CORPORATION ,  CHAWLA, Jasmeet S. ,  MANIPATRUNI, Sasikanth ,  BRISTOL, Robert L. ,  LIN, Chia-Ching ,  NIKONOV, Dmitri E. ,  YOUNG, Ian A.

Inventor： CHAWLA, Jasmeet S. ,  MANIPATRUNI, Sasikanth ,  BRISTOL, Robert L. ,  LIN, Chia-Ching ,  NIKONOV, Dmitri E. ,  YOUNG, Ian A.

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: Magneto-electric spin orbital (MESO) structures having functional oxide vias, and method of fabricating magneto-electric spin orbital (MESO) structures having functional oxide vias, are described. In an example, a magneto-electric spin orbital (MESO) device includes a source region and a drain region in or above a substrate. A first via contact is on the source region. A second via contact is on the drain region, the second via contact laterally adjacent to the first via contact. A plurality of alternating ferromagnetic material lines and non-ferromagnetic conductive lines is above the first and second via contacts. A first of the ferromagnetic material lines is on the first via contact, and a second of the ferromagnetic material lines is on the second via contact. A spin orbit coupling (SOC) via is on the first of the ferromagnetic material lines. A functional oxide via is on the second of the ferromagnetic material lines.