公开(公告)号：WO2011119952A2

公开(公告)日：2011-09-29

申请号：PCT/US2011/029987

申请日：2011-03-25

Applicant: MSP CORPORATION ,  LIU, Benjamin, Y.H. ,  MA, Yamin ,  DINH, Thuc

Inventor： LIU, Benjamin, Y.H. ,  MA, Yamin ,  DINH, Thuc

IPC: H01L21/205

CPC classification number: F01K17/04 ,  Y10T137/0318 ,  Y10T137/0379 ,  Y10T137/7761 ,  Y10T137/8593

Abstract: An apparatus and method for generating vapor from a liquid precursor for a thin film deposition on a substrate includes an inlet 130 section in fluid communication with a downstream vaporization chamber 120 section. The inlet 130 section comprises a gas inlet for receiving gas from a gas source 180 through a gas flow sensor 202 and a gas flow control valve 230 and a liquid inlet 150 for receiving liquid from a liquid source 220 through a liquid flow sensor 210 and a liquid flow control valve 230. An electronic controller 600 controls the gas and liquid flow control valves 230 thereby controlling the rates of gas and liquid flow into the inlet 130 section to generate vapor in the downstream vaporization chamber 120 section for thin film deposition on the substrate.

Abstract translation: 用于从液体前体产生蒸气的设备和方法用于薄膜沉积在基底上，包括与下游蒸发室120部分流体连通的入口130部分。 入口130部分包括气体入口，用于通过气体流量传感器202和气体流量控制阀230从气体源180接收气体，以及用于通过液体流量传感器210从液体源220接收液体的液体入口150和 液体流量控制阀230.电子控制器600控制气体和液体流量控制阀230，从而控制进入入口130部分的气体和液体流量的速率，以在下游蒸发室120部分中产生蒸汽，用于在基板上进行薄膜沉积 。

公开(公告)号：WO2011119952A3

公开(公告)日：2012-01-26

申请号：PCT/US2011029987

申请日：2011-03-25

Applicant: MSP CORP ,  LIU BENJAMIN Y H ,  MA YAMIN ,  DINH THUC

Inventor： LIU BENJAMIN Y H ,  MA YAMIN ,  DINH THUC

IPC: H01L21/205

CPC classification number: F01K17/04 ,  Y10T137/0318 ,  Y10T137/0379 ,  Y10T137/7761 ,  Y10T137/8593

Abstract: An apparatus and method for generating vapor from a liquid precursor for a thin film deposition on a substrate includes an inlet 130 section in fluid communication with a downstream vaporization chamber 120 section. The inlet 130 section comprises a gas inlet for receiving gas from a gas source 180 through a gas flow sensor 202 and a gas flow control valve 230 and a liquid inlet 150 for receiving liquid from a liquid source 220 through a liquid flow sensor 210 and a liquid flow control valve 230. An electronic controller 600 controls the gas and liquid flow control valves 230 thereby controlling the rates of gas and liquid flow into the inlet 130 section to generate vapor in the downstream vaporization chamber 120 section for thin film deposition on the substrate.

Abstract translation: 用于从液体前体产生蒸气的设备和方法用于薄膜沉积在基底上，包括与下游蒸发室120部分流体连通的入口130部分。 入口130部分包括气体入口，用于通过气体流量传感器202和气体流量控制阀230从气体源180接收气体，以及用于通过液体流量传感器210从液体源220接收液体的液体入口150和 液体流量控制阀230.电子控制器600控制气体和液体流量控制阀230，从而控制进入入口130部分的气体和液体流量的速率，以在下游蒸发室120部分中产生蒸汽，用于在基板上进行薄膜沉积 。

公开(公告)号：WO2005068682A3

公开(公告)日：2006-02-23

申请号：PCT/US2004041944

申请日：2004-12-15

Applicant: MSP CORP ,  LIU BENJAMIN Y H ,  MA YAMIN

Inventor： LIU BENJAMIN Y H ,  MA YAMIN

IPC: B01B1/00 ,  B05B7/00 ,  B05B12/14 ,  C23C16/448

CPC classification number: C23C16/4486 ,  B01B1/005

Abstract: A vaporization system (50, 92, 92a, 92b, 180) for thin film formation and for introducing vapors into a deposition chamber (26, 84, 130) for depositing films onto a semi-conductor surface has a vaporization chamber (52, 116, 192) that is selectively provided with at least two different, that is selectively provided with at least two different, separate, precursor liquids (54A, 54B, 54C, 110A, 110B, 186) carried in a gas stream that may be a single carrier gas, or a selected one of a plurality of carrier gases from gas sources (12, 62A, 62B, 62C, 98A, 98B, 184). When the liquids being introduced are likely to be subject to thermal decomposition from contact with high temperature surfaces, an atomizer (94, 142A, 142B, 154A, 154B, 182) is used at the inlet of the vaporization chamber (52, 116, 192) to provide an aerosol to the vaporization chamber (52, 116, 192) from one or more individual carrier gases from gas sources 12, 62A, 62B, 62C, 98A, 98B for simultaneous or sequential introduction into the vaporization chamber (52, 116, 192). The vaporization chamber (52, 116, 192) may be designed to insure complete vaporization by incorporating a recirculating gas flow through heated passageways (198, 124, 202, 212) before the vaporized gas/vapor mixture exits the vaporization chamber (52, 116, 192).

Abstract translation: 用于薄膜形成和用于将蒸气引入用于将膜沉积到半导体表面上的沉积室（26,84,130）中的蒸发系统（50,92,92a，92b，180）具有蒸发室（52,116 ，192），其被选择性地设置有至少两个不同的，其被选择性地设置有携带在气流中的至少两种不同的分离的前体液体（54A，54B，54C，110A，110B，186） 载气或来自气体源（12,62A，62B，62C，98A，98B，184）的多种载气中的选定的一种。 当引入的液体可能经受与高温表面接触的热分解时，在蒸发室（52,116,192）的入口处使用雾化器（94,142A，142B，154A，154B，182） ）以从气源12,62A，62B，62C，98A，98B的一种或多种单独的载气提供气化至气化室（52,116,192），以同时或顺序地引入蒸发室（52,116） ，192）。 蒸发室（52,116,192）可以被设计成通过在蒸发的气体/蒸汽混合物离开蒸发室（52,116）之前通过加热通道（198,124,202,212）并入再循环气体流来确保完全蒸发 ，192）。

公开(公告)号：WO2011097238A2

公开(公告)日：2011-08-11

申请号：PCT/US2011/023362

申请日：2011-02-01

Applicant: MSP CORPORATION ,  LIU, Benjamin, Y., H. ,  DINH, Thuc, M. ,  MA, Yamin

Inventor： LIU, Benjamin, Y., H. ,  DINH, Thuc, M. ,  MA, Yamin

IPC: H01L21/205

CPC classification number: B05B17/04 ,  C23C16/4486

Abstract: The present disclosure relates to an apparatus 10 and a method for forming a droplet aerosol for vaporization and subsequent thin film deposition on a substrate. The apparatus 10 includes a mechanism to control the rate of liquid flow through the apparatus 10, the mechanism including a piezoelectric actuator 240 to adjust the rate of liquid flow and an atomizing mechanism drawing gas from a compressed gas source 70 such that when the gas source conjoins with the liquid, the liquid is atomized to form droplets suspended in the gas thereby forming a droplet aerosol suitable for subsequent thin film deposition on a substrate. The method includes drawing a gas from a compressed gas source and drawing a liquid from a liquid source. The liquid and gas are conjoined in either a coaxial flow relationship or a radial flow relationship or an angular relationship between radial and coaxial flow wherein the gas engages the liquid to form droplets suitable for vaporization and subsequent thin film deposition on a substrate.

Abstract translation: 本公开涉及一种用于形成用于汽化和随后在基板上的薄膜沉积的液滴气溶胶的装置10和方法。 装置10包括一个控制流过装置10的液体流速的机构，该机构包括一个调节液体流速的压电致动器240和一个从压缩气体源70抽出气体的雾化机构， 与液体结合，液体被雾化以形成悬浮在气体中的液滴，从而形成适用于随后的薄膜沉积在基底上的液滴气溶胶。 该方法包括从压缩气体源抽取气体并从液体源抽取液体。 液体和气体以同轴流动关系或径向流动关系或径向和同轴流动之间的角度关系相结合，其中气体与液体接合以形成适于汽化的液滴和随后在基底上的薄膜沉积。

公开(公告)号：WO2006098792A3

公开(公告)日：2009-02-12

申请号：PCT/US2005047613

申请日：2005-12-30

Applicant: MSP CORP ,  LIU BENJAMIN Y H ,  MA YAMIN

Inventor： LIU BENJAMIN Y H ,  MA YAMIN

IPC: C23C16/00 ,  C23C16/448

CPC classification number: C23C16/4486 ,  C23C16/4481 ,  C23C16/45502 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45582 ,  C23C16/45585 ,  C23C16/45587 ,  C23C16/52

Abstract: The present invention involves injecting a liquid and gas into a vapor holding chamber (30) held at a sufficiently high temperature to insure all the liquid injected is vaporize and held in the chamber (30) as a vapor. The gas/vapor mixture is then delivered to the deposition chamber (70) in which the deposition substrate (72) is held.

Abstract translation: 本发明涉及将液体和气体注入到保持在足够高的温度下的蒸气保持室（30）中，以确保喷射的所有液体蒸发并作为蒸汽保持在室（30）中。 然后将气体/蒸汽混合物输送到其中保持沉积基板（72）的沉积室（70）。

公开(公告)号：WO2006098792A2

公开(公告)日：2006-09-21

申请号：PCT/US2005/047613

申请日：2005-12-30

Applicant: MSP CORPORATION ,  LIU, Benjamin, Y.H. ,  MA, Yamin

Inventor： LIU, Benjamin, Y.H. ,  MA, Yamin

IPC: C23C16/00 ,  H01L21/31

CPC classification number: C23C16/4486 ,  C23C16/4481 ,  C23C16/45502 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45582 ,  C23C16/45585 ,  C23C16/45587 ,  C23C16/52

Abstract: The present invention involves injecting a liquid and gas into a vapor holding chamber held at a sufficiently high temperature to insure all the liquid injected is vaporized and held in the chamber 30 as a vapor. The gas/vapor mixture is then delivered to the deposition chamber 70 in which the deposition substrate is held.

Abstract translation: 本发明涉及将液体和气体注入到保持在足够高的温度下的蒸汽保持室中，以确保喷射的所有液体被蒸发并作为蒸汽保持在腔室30中。 然后将气体/蒸气混合物输送到其中保持沉积基板的沉积室70。

公开(公告)号：WO2011097238A3

公开(公告)日：2011-12-01

申请号：PCT/US2011023362

申请日：2011-02-01

Applicant: MSP CORP ,  LIU BENJAMIN Y H ,  DINH THUC M ,  MA YAMIN

Inventor： LIU BENJAMIN Y H ,  DINH THUC M ,  MA YAMIN

IPC: H01L21/205

CPC classification number: B05B17/04 ,  C23C16/4486

Abstract: The present disclosure relates to an apparatus 10 and a method for forming a droplet aerosol for vaporization and subsequent thin film deposition on a substrate. The apparatus 10 includes a mechanism to control the rate of liquid flow through the apparatus 10, the mechanism including a piezoelectric actuator 240 to adjust the rate of liquid flow and an atomizing mechanism drawing gas from a compressed gas source 70 such that when the gas source conjoins with the liquid, the liquid is atomized to form droplets suspended in the gas thereby forming a droplet aerosol suitable for subsequent thin film deposition on a substrate. The method includes drawing a gas from a compressed gas source and drawing a liquid from a liquid source. The liquid and gas are conjoined in either a coaxial flow relationship or a radial flow relationship or an angular relationship between radial and coaxial flow wherein the gas engages the liquid to form droplets suitable for vaporization and subsequent thin film deposition on a substrate.

Abstract translation: 本公开涉及用于形成用于汽化和随后在基板上的薄膜沉积的微滴气溶胶的设备10和方法。 设备10包括控制液体流过装置10的速率的机构，该机构包括用于调节液体流动速率的压电致动器240和雾化机构从压缩气体源70抽取气体，使得当气体源 与液体结合时，液体被雾化以形成悬浮在气体中的液滴，由此形成适于随后在基板上的薄膜沉积的液滴气雾剂。 该方法包括从压缩气体源抽取气体并从液体源抽取液体。 液体和气体以同轴流动关系或径向流动关系或径向和同轴流动之间的角度关系联结，其中气体与液体接合以形成适于汽化和随后在基底上的薄膜沉积的液滴。

公开(公告)号：WO2005068682A2

公开(公告)日：2005-07-28

申请号：PCT/US2004/041944

申请日：2004-12-15

Applicant: MSP CORPORATION ,  LIU, Benjamin, Y., H. ,  MA, Yamin

Inventor： LIU, Benjamin, Y., H. ,  MA, Yamin

IPC: C23C16/448

CPC classification number: C23C16/4486 ,  B01B1/005

Abstract: A vaporization system (50, 92, 92a, 92b, 180) for thin film formation and for introducing vapors into a deposition chamber (26, 84, 130) for depositing films onto a semi-conductor surface has a vaporization chamber (52, 116, 192) that is selectively provided with at least two different, that is selectively provided with at least two different, separate, precursor liquids (54A, 54B, 54C, 110A, 110B, 186) carried in a gas stream that may be a single carrier gas, or a selected one of a plurality of carrier gases from gas sources (12, 62A, 62B, 62C, 98A, 98B, 184). When the liquids being introduced are likely to be subject to thermal decomposition from contact with high temperature surfaces, an atomizer (94, 142A, 142B, 154A, 154B, 182) is used at the inlet of the vaporization chamber (52, 116, 192) to provide an aerosol to the vaporization chamber (52, 116, 192) from one or more individual carrier gases from gas sources 12, 62A, 62B, 62C, 98A, 98B for simultaneous or sequential introduction into the vaporization chamber (52, 116, 192). The vaporization chamber (52, 116, 192) may be designed to insure complete vaporization by incorporating a recirculating gas flow through heated passageways (198, 124, 202, 212) before the vaporized gas/vapor mixture exits the vaporization chamber (52, 116, 192).

Abstract translation: 用于薄膜形成和用于将蒸气引入用于将膜沉积到半导体表面上的沉积室（26,84,130）中的蒸发系统（50,92,92a，92b，180）具有蒸发室（52,116 ，192），其被选择性地设置有至少两个不同的，其被选择性地设置有携带在气流中的至少两种不同的分离的前体液体（54A，54B，54C，110A，110B，186） 载气或来自气体源（12,62A，62B，62C，98A，98B，184）的多种载气中的选定的一种。 当引入的液体可能经受与高温表面接触的热分解时，在蒸发室（52,116,192）的入口处使用雾化器（94,142A，142B，154A，154B，182） ）以从气源12,62A，62B，62C，98A，98B的一种或多种单独的载气提供气雾剂以同时或顺序地引入蒸发室（52,116） ，192）。 蒸发室（52,116,192）可以被设计成通过在汽化的气体/蒸气混合物离开蒸发室（52,116）之前并入循环气流通过加热通道（198,124,202,212）来确保完全蒸发 ，192）。