中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

490 records (took 0.023 seconds)

    MESOPOROUS HYDROGENATED TITANIUM DIOXIDE
    1.
    发明申请
    MESOPOROUS HYDROGENATED TITANIUM DIOXIDE 审中-公开
    介孔氢化二氧化钛

    公开(公告)号：WO2018060520A1

    公开(公告)日：2018-04-05

    申请号：PCT/EP2017/074970

    申请日：2017-10-02

    Applicant: LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)

    Inventor： ISHCHENKO, Olga ,  LENOBLE, Damien

    IPC: B01J21/06 ,  B01J35/00 ,  C03C17/25 ,  C23C16/40 ,  C23C16/56 ,  C23C16/455

    CPC classification number: C23C16/405 ,  B01J21/063 ,  B01J35/002 ,  B01J35/004 ,  B01J35/1061 ,  B01J37/0215 ,  B01J37/082 ,  C02F2305/10 ,  C03C17/256 ,  C03C2217/212 ,  C03C2217/71 ,  C23C16/45525 ,  C23C16/45555 ,  C23C16/56

    Abstract: The first object of the invention is directed to a process for depositing TiO 2 on a substrate, comprising the steps of (a) providing a substrate, (b) performing said deposition with TiCl 4 and water by atomic layer deposition on said substrate; and (c) performing an annealing step. Said process is remarkable in that said step (b) is carried out at a temperature inferior to 50°C, and said step (c) is carried out at a temperature comprised between 450°C and 600°C in ambient air. The second object is directed to a photocatalyst comprising at least one layer of mesoporous hydrogenated TiO 2 on a substrate and obtainable by the process in accordance with the first object of the invention. The third object is directed to an use of said photocatalyst in a photocatalytic reaction performed under UV-visible light.

    Abstract translation: 本发明的第一个目的是针对在衬底上沉积TiO 2的方法，该方法包括以下步骤：（a）提供衬底，（b）执行所述 用TiCl 4和水通过原子层沉积在所述衬底上沉积; 和（c）执行退火步骤。 所述方法是显着的，因为所述步骤（b）在低于50℃的温度下进行，并且所述步骤（c）在环境空气中在450℃和600℃之间的温度下进行。 第二个目的涉及一种光催化剂，该光催化剂在基底上包含至少一层中孔氢化TiO 2层并且可以通过根据本发明的第一目的的方法获得。 第三个目的涉及所述光催化剂在紫外 - 可见光下进行的光催化反应中的用途。

    FUNCTIONALIZED FOAMS
    2.
    发明申请
    FUNCTIONALIZED FOAMS 审中-公开
    功能化泡沫

    公开(公告)号：WO2018009882A1

    公开(公告)日：2018-01-11

    申请号：PCT/US2017/041223

    申请日：2017-07-07

    Applicant: UCHICAGO ARGONNE, LLC

    Inventor： DARLING, Seth B. ,  ELAM, Jeffrey W. ,  MANE, Anil U. ,  SNYDER, Seth W.

    IPC: C08J9/00 ,  B01J20/22 ,  B01J20/28 ,  B01J20/32 ,  C09K3/32

    CPC classification number: C23C16/45525 ,  C02F1/40 ,  C09K3/32 ,  C23C16/045 ,  C23C16/06 ,  C23C16/30 ,  C23C16/45555 ,  E02B15/041

    Abstract: A method of fabricating a foam includes providing a foam comprising a base material. The base material is coated with an inorganic material using at least one of an atomic layer deposition (ALD), a molecular layer deposition (MLD), or sequential infiltration synthesis (SIS) process. The SIS process includes at least one cycle of exposing the foam to a first metal precursor for a first predetermined time and a first partial pressure. The first metal precursor infiltrates at least a portion of the base material and binds with the base material. The foam is exposed to a second co-reactant precursor for a second predetermined time and a second partial pressure. The second co-reactant precursor reacts with the first metal precursor, thereby forming the inorganic material on the base material. The inorganic material infiltrating at least the portion of the base material. The inorganic material is functionalized with a material.

    Abstract translation: 制造泡沫的方法包括提供包含基材的泡沫。 使用原子层沉积（ALD），分子层沉积（MLD），或顺序渗透合成（SIS）工艺中的至少一种将基材涂覆无机材料。 SIS过程包括至少一个将泡沫暴露于第一金属前体持续第一预定时间和第一分压的一个循环。 第一金属前体渗入至少一部分基底材料并与基底材料结合。 将泡沫暴露于第二共反应物前体第二预定时间和第二分压。 第二共反应物前体与第一金属前体反应，由此在基材上形成无机材料。 渗入至少部分基材的无机材料。 无机材料用材料进行功能化。

    FORMATION AND MODIFICATIONS OF CERAMIC NANOWIRES AND THEIR USE IN FUNCTIONAL MATERIALS
    4.
    发明申请
    FORMATION AND MODIFICATIONS OF CERAMIC NANOWIRES AND THEIR USE IN FUNCTIONAL MATERIALS 审中-公开
    陶瓷纳米线的形成与改性及其在功能材料中的应用

    公开(公告)号：WO2017142635A1

    公开(公告)日：2017-08-24

    申请号：PCT/US2017/012042

    申请日：2017-01-03

    Applicant: SILA NANOTECHNOLOGIES INC. ,  GEORGIA TECH RESEARCH CORPORATION

    Inventor： YUSHIN, Gleb ,  BENSON, James ,  LEI, Danni ,  BERDICHEVSKY, Eugene

    IPC: C04B35/00 ,  C04B35/01 ,  C22C21/00 ,  C22C23/00 ,  C08K3/10 ,  C08K3/20 ,  B82Y40/00

    CPC classification number: C09C1/407 ,  C01B13/18 ,  C01F5/06 ,  C01F7/30 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/16 ,  C07F5/069 ,  C09D1/00 ,  C23C16/45525

    Abstract: A catalyst-free synthesis method for the formation of a metalorganic compound comprising a desired (first) metal may include, for example, selecting another (second) metal and an organic solvent, with the second metal being selected to (i) be more reactive with respect to the organic solvent than the first metal and (ii) form, upon exposure of the second metal to the organic solvent, a reaction by-product that is more soluble in the organic solvent than the metalorganic compound. An alloy comprising the first metal and second metal may be first produced (e.g., formed or otherwise obtained) and then treated with the organic solvent in a liquid phase or vapor phase to form a mixture comprising (i) the reaction by-product comprising the second metal and (ii) the metalorganic compound comprising the first metal. The metalorganic compound may then be separated from the mixture in form of a solid.

    Abstract translation: 用于形成包含期望的（第一）金属的金属有机化合物的无催化剂合成方法可以包括例如选择另一种（第二）金属和有机溶剂，其中第二金属为 （i）与第一金属相比，其对有机溶剂的反应性更高，并且（ii）当第二金属暴露于有机溶剂时，形成比有机溶剂更易溶于有机溶剂的反应副产物 金属有机化合物。 可以首先制备包含第一金属和第二金属的合金（例如，形成或以其他方式获得），然后用液相或气相中的有机溶剂处理以形成包含以下的混合物：（i）包含 第二金属和（ii）包含第一金属的金属有机化合物。 金属有机化合物然后可以以固体形式从混合物中分离出来。

    ATOMIC LAYER DEPOSITION APPARATUS AND METHOD FOR PROCESSING SUBSTRATES USING AN APPARATUS
    8.
    发明申请
    ATOMIC LAYER DEPOSITION APPARATUS AND METHOD FOR PROCESSING SUBSTRATES USING AN APPARATUS 审中-公开
    原子层沉积装置和使用装置处理基板的方法

    公开(公告)号：WO2016072850A3

    公开(公告)日：2016-10-27

    申请号：PCT/NL2015050767

    申请日：2015-11-03

    Applicant: ASM INT N V

    Inventor： GRANNEMAN ERNST HENDRIK AUGUST ,  HU LEILEI

    IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  C23C16/54

    CPC classification number: C23C16/45548 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45578 ,  C23C16/4583 ,  C23C16/54 ,  H01J37/3244 ,  H01L21/6776 ,  H01L21/67784

    Abstract: An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.

    Abstract translation: 一种原子层沉积设备，具有第一系列高压气体注入开口和第一系列排气开口，所述第一系列排气开口被定位成使得它们一起在每个吹扫气体区域内产生第一高压/吸入区域，其中每个第一高压/ 抽吸区基本上在处理通道的整个宽度上延伸，并且其中连接到第二净化气体源的气体喷射开口的分布和第一高压/抽吸区内的气体排出口的分布以及 第二净化气体源的压力和排气口处的压力使得第一高压/吸入区内的平均压力偏离由处理通道内的平均压力限定的参考压力小于30％ 没有衬底存在。

    原子層堆積阻害材料
    9.
    发明申请
    原子層堆積阻害材料 审中-公开
    原子层沉积物抑制材料

    公开(公告)号：WO2016147941A1

    公开(公告)日：2016-09-22

    申请号：PCT/JP2016/057067

    申请日：2016-03-08

    Applicant: 株式会社村田製作所

    Inventor： 岩地　直樹

    IPC: C23C16/04 ,  H01G4/12 ,  H01G4/33

    CPC classification number: C23C16/45525 ,  C08K5/02 ,  C23C16/04 ,  C23C16/303 ,  C23C16/45534 ,  H01G4/12 ,  H01G4/186 ,  H01G4/33 ,  H01L21/0212

    Abstract: 　本発明は、フッ素含有量が３０ａｔ％以上であり、少なくとも１つの第３級炭素もしくは第４級炭素を有し、かつ、エステル基、ヒドロキシル基、カルボキシル基およびイミド基を有しない含フッ素樹脂から構成される原子層堆積阻害材料を提供する。

    Abstract translation: 本发明提供一种由氟含量为30原子％以上的含氟树脂构成的原子层沉积抑制材料，具有至少一个叔碳或季碳，缺少酯基，羟基，羧基， 和亚组。

Patent Agency Ranking