Abstract:
A method and structure (300) for generating a boosted word line voltage for a memory array, such as a DRAM array. To ensure that an adequate voltage is applied to the word line of the memory array during write operations, the word line driver circuit (201) is connected to a boost voltage generator (300) which is boosted to a level which is approximately equal to the Vcc supply voltage plus the threshold voltage of the memory cell pass transistor. A bias voltage generator provides a negative voltage which is used to bias the substrate of the memory array. The boosted voltage generator and the bias voltage generator can be operated in response to the same clock signal used to operate the memory array. A latch-up prevention circuit is provided to ensure that the word line driver circuit does not latch-up during power-on before an adequate boost voltage has been established.
Abstract:
A computer unified memory architecture (UMA) (300) system and method which includes a unified memory (304) which is partitioned into a main memory (304a) and a main frame buffer memory (304b). Together, the main frame buffer memory and the expansion frame buffer memory (306) form an entire frame buffer memory. The UMA system performs a display refresh operation by alternately accessing the main frame buffer memory and the expansion frame buffer memory. Because the display data bandwidth is split between the main frame buffer memory and the expansion frame buffer memory, the data bandwidth of the unified memory is effectively increased, thereby enabling higher system performance. The expansion frame buffer memory has a relatively small capacity, thereby retaining much of the cost benefit of a UMA system.