公开(公告)号：WO2006081636A1

公开(公告)日：2006-08-10

申请号：PCT/BE2006/000007

申请日：2006-02-06

Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) ,  KATHOLIEKE UNIVERSITEIT LEUVEN ,  WITVROUW, Ann ,  VAN HOOF, Chris ,  HELLÍN RICO, Raquel Consuelo ,  MUSCAT, Anthony, Joseph ,  FRANSAER, Jan ,  CELIS, Jean-Pierre

Inventor： WITVROUW, Ann ,  VAN HOOF, Chris ,  HELLÍN RICO, Raquel Consuelo ,  MUSCAT, Anthony, Joseph ,  FRANSAER, Jan ,  CELIS, Jean-Pierre

IPC: B81B7/00

CPC classification number: B81C1/00293 ,  B81C2203/0145

Abstract: Manufacturing a semiconductor device involves forming (200) a sacrificial layer where a micro cavity is to be located, forming (210) a metal layer of thickness greater than 1 micron over the sacrificial layer, forming (220) a porous layer from the metal layer, the porous layer having pores of length greater than ten times their breadth, and having a breadth in the range 10nm -500 nanometers. The pores can be created by anodising, electrodeposition or dealloying. Then the sacrificial layer can be removed (230) through the porous layer, to form the micro cavity, and pores can be sealed (240). Encapsulating MEMS devices with a porous layer can reduce costs by avoiding using photolithography for shaping the access holes since the sacrificial layer is removed through the porous membrane.

Abstract translation: 制造半导体器件涉及形成（200）牺牲层，其中微空腔将被定位，在牺牲层上形成（210）厚度大于1微米的金属层，从金属层形成（220）多孔层 所述多孔层具有长度大于其宽度的十倍的孔，并且具有10nm至500纳米范围内的宽度。 孔可以通过阳极氧化，电沉积或脱铝合金来形成。 然后可以通过多孔层去除牺牲层（230），以形成微腔，并且可以密封孔（240）。 使用多孔层封装MEMS器件可以通过避免使用光刻来成形入口孔来降低成本，因为牺牲层通过多孔膜去除。