公开(公告)号：WO2008154963A1

公开(公告)日：2008-12-24

申请号：PCT/EP2007/061220

申请日：2007-10-19

Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) ,  BOUGARD, Bruno ,  SCHUSTER, Thomas

Inventor： BOUGARD, Bruno ,  SCHUSTER, Thomas

IPC: G06F15/78

CPC classification number: G06F9/30036 ,  G06F9/3891 ,  G06F15/76 ,  G06F15/7867 ,  G06F15/8053

Abstract: The present invention is related to a programmable device comprising - a scalar cluster providing a scalar data path and a scalar register file and arranged for executing scalar instructions, - at least two interconnected vector clusters, whereby the vector clusters are connected with the scalar cluster. Each of the at least two vector clusters provides a vector data path and a vector register file and is arranged for executing at least one vector instruction different from vector instructions performed by any other vector cluster of the at least two vector clusters.

Abstract translation: 本发明涉及一种可编程设备，包括：提供标量数据路径的标量簇和标量寄存器文件，并且被布置为执行标量指令， - 至少两个互连的向量群集，由此向量群集与标量簇连接。 所述至少两个向量簇中的每一个提供向量数据路径和向量寄存器文件，并且被布置为执行与至少两个向量簇的任何其他向量簇执行的矢量指令不同的至少一个向量指令。

公开(公告)号：WO2008125543A3

公开(公告)日：2008-10-23

申请号：PCT/EP2008/054207

申请日：2008-04-08

Applicant: Interuniversitair Microelektronica Centrum (IMEC) ,  COTRIN TEIXEIRA, Ricardo

Inventor： COTRIN TEIXEIRA, Ricardo

IPC: H01L21/304 ,  H01L21/78

Abstract: The current invention presents a method for thinning wafers. The method uses a two-step process, whereby first the carrier wafer (2) is thinned and in a second step the device wafer (1 ) is thinned. The method is based on imprinting the combined thickness non-uniformities of carrier (2) and glue layer (3) essentially on the carrier (2), with a resulting low TTV of the wafer (100) after thinning.

公开(公告)号：WO2008122607A1

公开(公告)日：2008-10-16

申请号：PCT/EP2008/054091

申请日：2008-04-04

Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) ,  UNIVERSITEIT GENT ,  GENEXIS BV ,  ROELKENS, Günther ,  VAN THOURHOUT, Dries ,  BAETS, Roel ,  VAN DEN HOVEN, Gerard, Nicolaas

Inventor： ROELKENS, Günther ,  VAN THOURHOUT, Dries ,  BAETS, Roel ,  VAN DEN HOVEN, Gerard, Nicolaas

IPC: G02B6/124 ,  G02B6/126 ,  G02B6/30 ,  G02B6/34 ,  H04B10/24

CPC classification number: G02B6/29317 ,  G02B6/12007 ,  G02B6/126 ,  G02B6/30 ,  G02B6/34 ,  G02B6/4213 ,  G02B6/4215

Abstract: An optical device for optically multiplexing or demultiplexing light of different predetermined wavelengths is provided, the optical device comprising at least one first waveguide (11) and at least one second waveguide (12) formed on a substrate (10), wherein the at least one first waveguide and the at least one second waveguide intersect at an intersection, comprising a diffraction grating structure (13) formed at the intersection. There exists a first wavelength or wavelength band travelling within the first waveguide (11) exciting the grating structure and being diffracted an angle corresponding to an outcoupling direction and there exists a second wavelength or wavelength band, different from the first wavelength or wavelength band, travelling within the second waveguide (12) exciting the grating structure and being diffracted at an angle corresponding to the same outcoupling direction. The two radiation beams comprising radiation of two different wavelengths or wavelength bands are spatially separated into the optical waveguides (11 and 12) or combined into single outcoupling direction, e.g. into a single optical element, e.g. a single optical fiber (21). An optical device may be used in local access communications such as fiber to the home, office or curb applications.

Abstract translation: 提供了用于光学地多路复用或解复用不同预定波长的光的光学装置，该光学装置包括至少一个第一波导（11）和形成在基底（10）上的至少一个第二波导（12），其中至少一个 第一波导和所述至少一个第二波导在交叉点处相交，包括在交叉点处形成的衍射光栅结构（13）。 存在在第一波导（11）内行进的第一波长或波长带，激发光栅结构并衍射出与耦合方向相对应的角度，并且存在不同于第一波长或波长带的第二波长或波长带， 在第二波导（12）内激发光栅结构并以对应于相同的外耦合方向的角衍射。 包括两个不同波长或波长带的辐射的两个辐射束在空间上分离成光波导（11和12）或组合成单个外耦合方向，例如。 进入单个光学元件，例如 单个光纤（21）。 光学设备可以用于本地接入通信，例如光纤到家庭，办公室或路边应用。

公开(公告)号：WO2008026081A2

公开(公告)日：2008-03-06

申请号：PCT/IB2007/004248

申请日：2007-08-31

Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) ,  NXP B.V. ,  GOUX, Ludovic ,  WOUTERS, Dirk

Inventor： GOUX, Ludovic ,  WOUTERS, Dirk

CPC classification number: H01L45/04 ,  B82Y10/00 ,  G11C13/0007 ,  G11C13/0009 ,  G11C13/0014 ,  G11C2213/32 ,  G11C2213/79 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/285 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1633 ,  H01L45/1683 ,  H01L51/0575

Abstract: For improved scalability of resistive switching memories, a cross-point resistive switching structure is disclosed wherein the plug itself is used to store the resistive switching material and where the top electrode layer is self-aligned to the plug using, for example, chemical-mechanical-polishing (CMP) or simply mechanical-polishing.

Abstract translation: 为了改进电阻式切换存储器的可扩展性，公开了一种交叉点电阻切换结构，其中塞本身用于存储电阻切换材料，并且其中顶部电极层与插头自对准 例如使用化学机械抛光（CMP）或简单的机械抛光。

公开(公告)号：WO2007132016A1

公开(公告)日：2007-11-22

申请号：PCT/EP2007/054770

申请日：2007-05-16

Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) ,  SAMSUNG ELECTRONICS CO. LTD. ,  BOUGARD, Bruno

Inventor： BOUGARD, Bruno

IPC: H04B1/28

CPC classification number: H04B1/406 ,  Y02D70/126

Abstract: The present invention is related to a digital receiver comprising - means (90) for receiving packetised data, - a first processing module (10) for packet detection comprising a first programmable processor (15), - a second processing module (50) for demodulation and packet decoding comprising a second programmable processor (55), - a first digital receive controller (30) comprising a third processor arranged for being notified of detection of data by said first processing module (10) and for activating the second processing module (50).

Abstract translation: 本发明涉及一种数字接收机，包括 - 用于接收打包数据的装置（90）， - 用于分组检测的第一处理模块（10），包括第一可编程处理器（15）， - 第二处理模块（50），用于解调 以及分组解码，包括第二可编程处理器（55）， - 第一数字接收控制器（30），包括第三处理器，所述第三处理器被布置为被所述第一处理模块（10）的数据检测通知，并激活所述第二处理模块 ）。

公开(公告)号：WO2006047840A1

公开(公告)日：2006-05-11

申请号：PCT/BE2005/000156

申请日：2005-11-07

Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) ,  WIRIX-SPEETJENS, Roel ,  FYEN, Wim ,  REEKMANS, Gunter

Inventor： WIRIX-SPEETJENS, Roel ,  FYEN, Wim ,  REEKMANS, Gunter

IPC: G01N33/543 ,  B03C1/00 ,  B01L3/00

CPC classification number: B82Y30/00 ,  B03C2201/24 ,  B82Y15/00 ,  G01N33/54326

Abstract: The present invention is related to a method for re-enabling transport by means of a magnetic field gradient transport mechanism of magnetic beads comprising a ligand in a solution on top of a surface comprising a receptor bound with said ligand, comprising the step of changing the properties of said solution such that dissociation occurs between said ligand and said receptor, and such that a sufficient repulsive interaction is created between said surface and said bead to allow transport of said bead.

Abstract translation: 本发明涉及一种利用包含配体在包含与所述配体结合的受体的表面顶部的溶液中的磁珠的磁场梯度传递机制来重新实现传输的方法，该方法包括以下步骤： 所述溶液的性质使得在所述配体和所述受体之间发生解离，并且使得在所述表面和所述珠粒之间产生足够的排斥相互作用以允许所述珠粒的输送。

公开(公告)号：WO2009003972A1

公开(公告)日：2009-01-08

申请号：PCT/EP2008/058346

申请日：2008-06-29

Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) ,  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. ,  LIU, CHUNG-SHI ,  BEYER, Gerald ,  DEMUYNCK, Steven ,  TOKEI, Zsolt ,  PALMANS, Roger ,  ZHAO, Chao ,  CHEN-HUA, Yu

Inventor： LIU, CHUNG-SHI ,  BEYER, Gerald ,  DEMUYNCK, Steven ,  TOKEI, Zsolt ,  PALMANS, Roger ,  ZHAO, Chao ,  CHEN-HUA, Yu

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/485

CPC classification number: H01L21/76843 ,  H01L21/76831 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/485 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention is related toa method for producing a contact (4) through the pre-metal dielectric (PMD) layer (6) of an integrated circuit, between the Front End of Line and the Back End of Line, wherein said PMD layer comprises oxygen, said method comprising the steps of : -producing a hole in the PMD, -depositing a conductive barrier layer (3) at the bottom of the hole, -depositing a CuMn alloy on the bottom and side walls of the hole, -filling the remaining portion of the hole with Cu (4), -performing an anneal step, to form a barrier (5) on the side walls of the hole, said barrier comprising an oxide comprising Mn, -performing a CMP step. The invention is equally related to a device which can be produced by the method of the invention.

Abstract translation: 本发明涉及一种用于通过集成电路的前金属电介质（PMD）层（6）在线的前端和后端之间生产触点（4）的方法，其中所述PMD层包括 氧，所述方法包括以下步骤： - 在PMD中产生孔， - 在孔的底部沉积导电阻挡层（3）， - 将CuMn合金沉积在孔的底部和侧壁上， - 填充 所述孔的剩余部分具有Cu（4）， - 执行退火步骤，以在所述孔的侧壁上形成阻挡层（5），所述阻挡层包括包含Mn的氧化物， - 执行CMP步骤。 本发明同样涉及可通过本发明的方法生产的装置。

公开(公告)号：WO2008053008A2

公开(公告)日：2008-05-08

申请号：PCT/EP2007/061731

申请日：2007-10-31

Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) ,  ASML NETHERLANDS BV ,  WITVROUW, Ann ,  HASPESLAGH, Luc

Inventor： WITVROUW, Ann ,  HASPESLAGH, Luc

IPC: B81C1/00

CPC classification number: H01L21/324 ,  B81C1/00246 ,  B81C2203/0735 ,  Y10T428/24612

Abstract: The present invention provides a method for manufacturing micromachined devices on a substrate (10) comprising electrical circuitry, the micromachined devices comprising at least one micromachined structure, without affecting the underlying electrical circuitry. The method comprises providing a protection layer (15) on the substrate (10); providing on the protection layer (15) a plurality of patterned layers for forming the at least one micromachined structure, the plurality of patterned layers comprising at least one sacrificial layer (18); and thereafter removing at least a portion of the sacrificial layer (18) to release the at least one micromachined structure. The method furthermore comprises, before providing the protection layer (15), annealing the substrate (10) at a temperature higher than a highest temperature used during manufacturing of the micromachined device, annealing being for preventing gas formation underneath the protection layer (15) during subsequent manufacturing steps. The present invention also provides a micromachined device obtained by the method according to embodiments of the present invention.

Abstract translation: 本发明提供了一种用于在包括电路的基板（10）上制造微机械装置的方法，所述微机械装置包括至少一个微机械结构，而不影响下面的电路。 该方法包括在衬底（10）上提供保护层（15）; 在所述保护层（15）上提供用于形成所述至少一个微机械结构的多个图案化的层，所述多个图案化的层包括至少一个牺牲层（18）; 之后去除牺牲层（18）的至少一部分以释放至少一个微机械结构。 在提供保护层（15）之前，该方法还包括在高于在制造微机械装置期间使用的最高温度的温度下退火衬底（10），退火是为了防止在保护层（15）下方在保护层 后续制造步骤。 本发明还提供了通过根据本发明的实施例的方法获得的微机械装置。

公开(公告)号：WO2007138063A1

公开(公告)日：2007-12-06

申请号：PCT/EP2007/055211

申请日：2007-05-29

Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) ,  UMICORE ,  LEYS, Frederik ,  BONZOM, Renaud ,  CAYMAX, Matty ,  LOO, Roger

Inventor： LEYS, Frederik ,  BONZOM, Renaud ,  CAYMAX, Matty ,  LOO, Roger

IPC: H01L21/20 ,  H01L21/205

CPC classification number: C30B29/08 ,  C30B25/20 ,  C30B29/04 ,  C30B29/06 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02634

Abstract: The invention relates to a method for improving the surface roughness of a semiconductor substrate. A method is provided for reducing the roughness of a semiconductor substrate surface comprising the steps of: providing a semiconductor substrate, the surface of which comprises a group IV mono-crystalline semiconductor material, and depositing, on said group IV mono-crystalline semiconductor material, a layer of (substantially) the same group IV mono-crystalline semiconductor material, by a deposition technique using nitrogen and/or at least one noble gas as carrier gas.

Abstract translation: 本发明涉及一种改善半导体衬底的表面粗糙度的方法。 提供了一种降低半导体衬底表面粗糙度的方法，包括以下步骤：提供半导体衬底，其表面包括IV族单晶半导体材料，并在所述IV族单晶半导体材料上沉积， 通过使用氮气和/或至少一种惰性气体作为载气的沉积技术形成（基本上）相同的IV族单晶半导体材料层。

公开(公告)号：WO2007062491A1

公开(公告)日：2007-06-07

申请号：PCT/BE2006/000127

申请日：2006-11-28

Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) ,  LIU, Jian ,  VANDERSTEEN, Gerd

Inventor： LIU, Jian ,  VANDERSTEEN, Gerd

IPC: H04B17/00 ,  H01Q3/26

CPC classification number: H01Q3/267 ,  H04B17/20

Abstract: The present invention relates to a calibration circuit comprising - at least a first (11) and a second (12) input/output port, each arranged for being connected to a different transmitter/receiver pair of a MIMO system, - at least a third (13) and a fourth (14) input/output port, each arranged for being connected to a different antenna, characterised in that it further comprises - an attenuator having a first attenuator port (21) and a second attenuator port (22), and - a first (S3) and a second (S4) non-reciprocal switch, whereby the first switch (S3) is arranged for establishing a connection between the first (11) input/output port and either the third (13) input/output port or the first attenuator port (21), and the second switch (S4) is arranged for establishing a connection between the second (12) input/output port and either the fourth (14) input/output port or the second attenuator port (22).

Abstract translation: 本发明涉及一种校准电路，其包括 - 至少第一（11）和第二（12）输入/输出端口，每个端口被设置为连接到MIMO系统的不同发射机/接收机对， - 至少第三 （13）和第四（14）输入/输出端口，每个端口被布置成连接到不同的天线，其特征在于还包括具有第一衰减器端口（21）和第二衰减器端口（22）的衰减器， 以及 - 第一（S3）和第二（S4）不可逆开关，由此第一开关（S3）被布置成用于建立第一（11）输入/输出端口和第三输入/ 输出端口或第一衰减器端口（21），并且第二开关（S4）被布置成用于建立第二输入/输出端口与第四输入端口或第二衰减器端口之间的连接 （22）。