公开(公告)号：WO2008053008A2

公开(公告)日：2008-05-08

申请号：PCT/EP2007/061731

申请日：2007-10-31

Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) ,  ASML NETHERLANDS BV ,  WITVROUW, Ann ,  HASPESLAGH, Luc

Inventor： WITVROUW, Ann ,  HASPESLAGH, Luc

IPC: B81C1/00

CPC classification number: H01L21/324 ,  B81C1/00246 ,  B81C2203/0735 ,  Y10T428/24612

Abstract: The present invention provides a method for manufacturing micromachined devices on a substrate (10) comprising electrical circuitry, the micromachined devices comprising at least one micromachined structure, without affecting the underlying electrical circuitry. The method comprises providing a protection layer (15) on the substrate (10); providing on the protection layer (15) a plurality of patterned layers for forming the at least one micromachined structure, the plurality of patterned layers comprising at least one sacrificial layer (18); and thereafter removing at least a portion of the sacrificial layer (18) to release the at least one micromachined structure. The method furthermore comprises, before providing the protection layer (15), annealing the substrate (10) at a temperature higher than a highest temperature used during manufacturing of the micromachined device, annealing being for preventing gas formation underneath the protection layer (15) during subsequent manufacturing steps. The present invention also provides a micromachined device obtained by the method according to embodiments of the present invention.

Abstract translation: 本发明提供了一种用于在包括电路的基板（10）上制造微机械装置的方法，所述微机械装置包括至少一个微机械结构，而不影响下面的电路。 该方法包括在衬底（10）上提供保护层（15）; 在所述保护层（15）上提供用于形成所述至少一个微机械结构的多个图案化的层，所述多个图案化的层包括至少一个牺牲层（18）; 之后去除牺牲层（18）的至少一部分以释放至少一个微机械结构。 在提供保护层（15）之前，该方法还包括在高于在制造微机械装置期间使用的最高温度的温度下退火衬底（10），退火是为了防止在保护层（15）下方在保护层 后续制造步骤。 本发明还提供了通过根据本发明的实施例的方法获得的微机械装置。

公开(公告)号：WO2006081636A1

公开(公告)日：2006-08-10

申请号：PCT/BE2006/000007

申请日：2006-02-06

Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) ,  KATHOLIEKE UNIVERSITEIT LEUVEN ,  WITVROUW, Ann ,  VAN HOOF, Chris ,  HELLÍN RICO, Raquel Consuelo ,  MUSCAT, Anthony, Joseph ,  FRANSAER, Jan ,  CELIS, Jean-Pierre

Inventor： WITVROUW, Ann ,  VAN HOOF, Chris ,  HELLÍN RICO, Raquel Consuelo ,  MUSCAT, Anthony, Joseph ,  FRANSAER, Jan ,  CELIS, Jean-Pierre

IPC: B81B7/00

CPC classification number: B81C1/00293 ,  B81C2203/0145

Abstract: Manufacturing a semiconductor device involves forming (200) a sacrificial layer where a micro cavity is to be located, forming (210) a metal layer of thickness greater than 1 micron over the sacrificial layer, forming (220) a porous layer from the metal layer, the porous layer having pores of length greater than ten times their breadth, and having a breadth in the range 10nm -500 nanometers. The pores can be created by anodising, electrodeposition or dealloying. Then the sacrificial layer can be removed (230) through the porous layer, to form the micro cavity, and pores can be sealed (240). Encapsulating MEMS devices with a porous layer can reduce costs by avoiding using photolithography for shaping the access holes since the sacrificial layer is removed through the porous membrane.

Abstract translation: 制造半导体器件涉及形成（200）牺牲层，其中微空腔将被定位，在牺牲层上形成（210）厚度大于1微米的金属层，从金属层形成（220）多孔层 所述多孔层具有长度大于其宽度的十倍的孔，并且具有10nm至500纳米范围内的宽度。 孔可以通过阳极氧化，电沉积或脱铝合金来形成。 然后可以通过多孔层去除牺牲层（230），以形成微腔，并且可以密封孔（240）。 使用多孔层封装MEMS器件可以通过避免使用光刻来成形入口孔来降低成本，因为牺牲层通过多孔膜去除。

公开(公告)号：WO2009019316A3

公开(公告)日：2009-05-22

申请号：PCT/EP2008060486

申请日：2008-08-08

Applicant: IMEC INTER UNI MICRO ELECTR ,  UNIV LEUVEN KATH ,  STOFFELS STEVE ,  WITVROUW ANN

Inventor： STOFFELS STEVE ,  WITVROUW ANN

IPC: B81C1/00 ,  H03H3/007

CPC classification number: B81C1/00063 ,  B81B2201/0271 ,  B81C2203/0145 ,  H03H3/0078 ,  H03H9/1057

Abstract: A method for forming narrow gaps, for ex ample gaps narrower than 400nm, e.g. less than 200nm or 100 nm, between elements of a MEMS structure is described, as well as a method for forming micromachined or MEMS structures comprising narrow gaps. The method may for example be used for forming high frequency micromechanical resonators comprising narrow transduction gaps.

Abstract translation: 用于形成狭窄间隙的方法，用于例如窄于400nm的间隙，例如 描述了MEMS结构的元件之间的小于200nm或100nm，以及用于形成包括窄间隙的微加工或MEMS结构的方法。 该方法可以例如用于形成包括窄换能间隙的高频微机械谐振器。

公开(公告)号：WO0174708A3

公开(公告)日：2002-03-21

申请号：PCT/IB0100765

申请日：2001-04-05

Applicant: IMEC INTER UNI MICRO ELECTR ,  SEDKY SHERIF ,  WITVROUW ANN ,  BAERT KRIS ,  CAYMAX MATTY ,  RUSU CRISTINA

Inventor： SEDKY SHERIF ,  WITVROUW ANN ,  BAERT KRIS ,  CAYMAX MATTY ,  RUSU CRISTINA

IPC: B81C1/00 ,  C23C16/22 ,  H01L21/205 ,  H01L31/0368 ,  H01L31/18 ,  B81B3/00

CPC classification number: C23C16/22 ,  B81C1/00365 ,  B81C2201/0164 ,  B81C2201/017 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/03682 ,  H01L31/1812 ,  Y02E10/546

Abstract: Method and apparatus of to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers are used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrystalline layer. The parameters include, without limitation: deposition temperature; concentration of semiconductors (e.g., the concentration of Silicon and Germanium in a SixGe1-x layer, with x being the concentration parameter); concentration of dopants (e.g., the concentration of Boron or Phosphorous); amount of pressure; and use of plasma. Depending on the particular environment in which the polycrystalline SiGe is grown, different values of parameters are used.

Abstract translation: 获得沉积的多晶和低应力SiGe层的方法和设备。 这些层用于微机电系统（MEMS）装置或微加工结构。 分析影响多晶层中的应力的不同参数。 参数包括但不限于：沉积温度; 半导体的浓度（例如，SixGe1-x层中的硅和锗的浓度，x是浓度参数）; 掺杂剂的浓度（例如硼或磷的浓度）; 压力量; 并使用等离子体。 取决于多晶SiGe生长的特定环境，使用不同的参数值。

公开(公告)号：WO2008053008A3

公开(公告)日：2008-06-19

申请号：PCT/EP2007061731

申请日：2007-10-31

Applicant: IMEC INTER UNI MICRO ELECTR ,  ASML NETHERLANDS BV ,  WITVROUW ANN ,  HASPESLAGH LUC

Inventor： WITVROUW ANN ,  HASPESLAGH LUC

IPC: B81C1/00

CPC classification number: H01L21/324 ,  B81C1/00246 ,  B81C2203/0735 ,  Y10T428/24612

Abstract: The present invention provides a method for manufacturing micromachined devices on a substrate (10) comprising electrical circuitry, the micromachined devices comprising at least one micromachined structure, without affecting the underlying electrical circuitry. The method comprises providing a protection layer (15) on the substrate (10); providing on the protection layer (15) a plurality of patterned layers for forming the at least one micromachined structure, the plurality of patterned layers comprising at least one sacrificial layer (18); and thereafter removing at least a portion of the sacrificial layer (18) to release the at least one micromachined structure. The method furthermore comprises, before providing the protection layer (15), annealing the substrate (10) at a temperature higher than a highest temperature used during manufacturing of the micromachined device, annealing being for preventing gas formation underneath the protection layer (15) during subsequent manufacturing steps. The present invention also provides a micromachined device obtained by the method according to embodiments of the present invention.

Abstract translation: 本发明提供了一种用于在包括电路的衬底（10）上制造微加工器件的方法，所述微加工器件包括至少一个微加工结构，而不影响下面的电路。 该方法包括在衬底（10）上提供保护层（15）; 在所述保护层（15）上设置多个用于形成所述至少一个微机械加工结构的图案化层，所述多个图案化层包括至少一个牺牲层（18）; 然后去除所述牺牲层（18）的至少一部分以释放所述至少一个微加工结构。 该方法还包括在提供保护层（15）之前，在高于在微加工装置的制造期间使用的最高温度的温度下对衬底（10）退火，用于在保护层（15）的下方防止形成气体的退火 后续制造步骤。 本发明还提供了通过根据本发明的实施例的方法获得的微加工装置。

公开(公告)号：WO2013030403A1

公开(公告)日：2013-03-07

申请号：PCT/EP2012/067084

申请日：2012-09-03

Applicant: IMEC ,  AMERICAN UNIVERSITY IN CAIRO ,  EL RIFA, Joumana ,  SEDKY, Sherif ,  WITVROUW, Ann

Inventor： EL RIFA, Joumana ,  SEDKY, Sherif ,  WITVROUW, Ann

IPC: H03K17/96

CPC classification number: H03K17/962

Abstract: A MEMS capacitive switch is disclosed, the switch comprises a bottom electrode, a movable top electrode positioned above the bottom electrode and separated there from by a cavity, further comprising a layer of an amorphous semiconductor material in between the top and the bottom electrode and attached to one of these 2 electrodes preventing ohmic contact between both electrodes when moving the top electrode.

Abstract translation: 公开了一种MEMS电容式开关，该开关包括底部电极，位于底部电极上方的可移动顶部电极，并且在其之间由空腔隔开，还包括位于顶部和底部电极之间的非晶半导体材料层， 到这两个电极之一，当移动顶部电极时，防止两个电极之间的欧姆接触。

公开(公告)号：WO2009019316A2

公开(公告)日：2009-02-12

申请号：PCT/EP2008/060486

申请日：2008-08-08

Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW ,  KATHOLIEKE UNIVERSITEIT LEUVEN, K.U. LEUVEN R & D ,  STOFFELS, Steve ,  WITVROUW, Ann

Inventor： STOFFELS, Steve ,  WITVROUW, Ann

IPC: B81C1/00

CPC classification number: B81C1/00063 ,  B81B2201/0271 ,  B81C2203/0145 ,  H03H3/0078 ,  H03H9/1057

Abstract: A method for forming narrow gaps, for ex ample gaps narrower than 400nm, e.g. less than 200nm or 100 nm, between elements of a MEMS structure is described, as well as a method for forming micromachined or MEMS structures comprising narrow gaps. The method may for example be used for forming high frequency micromechanical resonators comprising narrow transduction gaps.

Abstract translation: 形成窄间隙的方法，例如窄于400nm的间隙，例如 描述了MEMS结构的元件之间小于200nm或100nm，以及用于形成包括窄间隙的微加工或MEMS结构的方法。 该方法可以例如用于形成包括窄换能间隙的高频微机械谐振器。