公开(公告)号：WO2012033869A1

公开(公告)日：2012-03-15

申请号：PCT/US2011/050752

申请日：2011-09-08

Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE ,  PARK, Jang-Ung ,  NAM, SungWoo ,  LIEBER, Charles, M.

Inventor： PARK, Jang-Ung ,  NAM, SungWoo ,  LIEBER, Charles, M.

IPC: C01B31/04 ,  H01L21/336 ,  H01L29/786 ,  H01L29/16

CPC classification number: H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02664 ,  H01L23/53276 ,  H01L29/1606 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/7781 ,  H01L29/78618 ,  H01L29/78684 ,  H01L2924/0002 ,  Y10S977/734 ,  Y10S977/936 ,  Y10S977/938 ,  H01L2924/00

Abstract: In a method for fabricating a graphene structure, there is formed on a fabrication substrate a pattern of a plurality of distinct graphene catalyst materials. In one graphene synthesis step, different numbers of graphene layers are formed on the catalyst materials in the formed pattern. In a method for fabricating a graphene transistor, on a fabrication substrate at least one graphene catalyst material is provided at a substrate region specified for synthesizing a graphene transistor channel and at least one graphene catalyst material is provided at a substrate region specified for synthesizing a graphene transistor source, and at a substrate region specified for synthesizing a graphene transistor drain. Then in one graphene synthesis step, at least one layer of graphene is formed at the substrate region for the graphene transistor channel, and at the regions for the transistor source and drain there are formed a plurality of layers of graphene.

Abstract translation: 在制造石墨烯结构的方法中，在制造衬底上形成多个不同的石墨烯催化剂材料的图案。 在一个石墨烯合成步骤中，在所形成的图案中的催化剂材料上形成不同数量的石墨烯层。 在制造石墨烯晶体管的方法中，在制造衬底上，在用于合成石墨烯晶体管沟道的衬底区域处提供至少一个石墨烯催化剂材料，并且至少一个石墨烯催化剂材料设置在用于合成石墨烯的基板区域 晶体管源，以及在合成石墨烯晶体管漏极所规定的衬底区域。 然后在一个石墨烯合成步骤中，在用于石墨烯晶体管沟道的衬底区域上形成至少一层石墨烯，在晶体管源极和漏极的区域形成多层石墨烯。