公开(公告)号：WO2009067641A3

公开(公告)日：2009-07-09

申请号：PCT/US2008084277

申请日：2008-11-21

Applicant: SAINT GOBAIN CERAMICS ,  MACK III GUILFORD L ,  JONES CHRISTOPHER D ,  PRANADI FERY ,  LOCHER JOHN W ,  ZANELLA STEVEN A ,  BATES HERBERT E

Inventor： MACK III GUILFORD L ,  JONES CHRISTOPHER D ,  PRANADI FERY ,  LOCHER JOHN W ,  ZANELLA STEVEN A ,  BATES HERBERT E

IPC: H01L21/86 ,  C30B15/14 ,  C30B15/20 ,  C30B29/20 ,  H05B6/36

CPC classification number: C30B15/203 ,  C30B15/28 ,  C30B15/34 ,  C30B29/20 ,  C30B29/22

Abstract: A method and apparatus for the production of r-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting an absence of lineage.

Abstract translation: 公开了生产r-平面单晶蓝宝石的方法和设备。 该方法和设备可以使用边缘限定的膜馈送生长技术来生产展现不存在谱系的单晶材料。

公开(公告)号：WO2009067641A2

公开(公告)日：2009-05-28

申请号：PCT/US2008/084277

申请日：2008-11-21

Applicant: SAINT-GOBAIN CERAMICS & PLASTICS, INC. ,  MACK, III, Guilford L. ,  JONES, Christopher D. ,  PRANADI, Fery ,  LOCHER, John W. ,  ZANELLA, Steven A. ,  BATES, Herbert E.

Inventor： MACK, III, Guilford L. ,  JONES, Christopher D. ,  PRANADI, Fery ,  LOCHER, John W. ,  ZANELLA, Steven A. ,  BATES, Herbert E.

IPC: H01L21/86 ,  C30B29/20 ,  C30B15/14 ,  C30B15/20 ,  H05B6/36

CPC classification number: C30B15/203 ,  C30B15/28 ,  C30B15/34 ,  C30B29/20 ,  C30B29/22

Abstract: A method and apparatus for the production of r-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting an absence of lineage.

Abstract translation: 公开了一种用于生产r面单晶蓝宝石的方法和装置。 该方法和装置可以使用边缘限定的胶片生长技术来生产表现出谱系不存在的单晶材料。

公开(公告)号：WO2008036888A1

公开(公告)日：2008-03-27

申请号：PCT/US2007/079149

申请日：2007-09-21

Applicant: SAINT-GOBAIN CERAMICS & PLASTICS, INC. ,  TATARTCHENKO, Vitali ,  JONES, Christopher, D. ,  ZANELLA, Steven, A. ,  LOCHER, John, W. ,  PRANADI, Fery

Inventor： TATARTCHENKO, Vitali ,  JONES, Christopher, D. ,  ZANELLA, Steven, A. ,  LOCHER, John, W. ,  PRANADI, Fery

IPC: C30B15/34 ,  C30B29/20

CPC classification number: C30B15/206 ,  C30B15/14 ,  C30B15/34 ,  C30B29/20 ,  Y10T117/1092 ,  Y10T428/23986

Abstract: A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.

Abstract translation: 公开了一种用于生产C平面单晶蓝宝石的方法和装置。 该方法和装置可以使用边缘限定的胶片进料生长技术来生产表现出低多晶性和/或低位错密度的单晶材料。